Murata Manufacturing Co., Ltd.

Senju Metal Industry Co., Ltd.

Hidekiyo Takaoka

Kosuke Nakano

Kiyotaka Maegawa

Kunihiko Hamada

Akihiro Nomura

Shodo Takei

Satoshi Ishino

Osamu Chikagawa

Kenichi Kawasaki

Minoru Ueshima

Shizuharu Watanabe

Nobuaki Ogawa

Hideo Nakagoshi

Yoichi Takagi

Yutaka Ota

Yoshiko Okada

Yoshihiro Kawaguchi

Koichi Hayashi

Akihiko Kamada

Takayuki Kayatani

Satoru Noda

Masaaki Mizushiro

Yasuyuki Sekimoto

Yu Tokuda

Ko Inaba

Wataru Yanase

Shigeharu Kasai

Satoshi Shindou

Shigeo Nishimura

Tohru Kurushima

Kosuke Nakono

Masafumi Seino

A repair method that includes covering a damaged part of a member to be repaired with a repair material, and heating the repair material to a predetermined temperature to form an alloy layer. At least the surface of the member to be repaired is a first metal such as Cu. The repair material includes a second metal such as Sn. By the heating, the surface of the member to be repaired is integrally joined with a layer of an intermetallic compound and an alloy having a melting point higher than a melting point of either of the first metal or the second metal.

Repair method and repair material

A first structural material is bonded to a second structural material with a joining material provided with a mixed layer of a raw-material component for forming an intermetallic compound layer and a resin component that softens and flows during heat treatment interposed therebetween to form bonded structural materials. When the bonded structural materials are heat-treated, the first structural material is joined to the second structural material with an intermetallic compound layer, and the resin component exudes and covers the lateral circumferential (exposed) portion of the intermetallic compound layer with a resin film.

Method for joining structural material, joining sheet, and joint structure

A solder bump formed on an Ni electrode with the use of a solder ball containing Bi as a main component and Sn as a sub component. The solder ball contains Sn from 1.0 to 10.0 mass % and at most 1.0 mass % of at least one of Cu and Ag. A solder joint portion obtained by use of the solder bump has at least one of Sn and an SnBi eutectic alloy.

Method of forming solder bump, and solder bump

A conductive material that includes a metal component consisting of a first metal and a second metal having a melting point higher than that of the first metal, wherein the first metal is Sn or an alloy containing 70% by weight or more of Sn, and the second metal is a metal or alloy which forms an intermetallic compound having a melting point of 310&#xb0; C. or higher with the first metal and has a lattice constant difference of 50% or greater between itself and the intermetallic compound generated at the circumference of the second metal.

Conductive material, bonding method using the same, and bonded structure

A solder paste including a metal component consisting of a first metal powder and a second metal powder having a melting point higher than that of the first metal, and a flux component. The first metal is Sn or an alloy containing Sn, the second metal is one of (1) a Cu&#x2014;Mn alloy in which a ratio of Mn to the second metal is 5 to 30% by weight and (2) a Cu&#x2014;Ni alloy in which a ratio of Ni to the second metal is 5 to 20% by weight, and a ratio of the second metal to the metal component is 36.9% by volume or greater.

Solder paste, joining method using the same and joined structure

An electronic part including an electronic part main body and an external electrode on the surface of the electronic part main body. The external electrode includes at least one alloy layer selected from among a Cu&#x2014;Ni alloy layer and a Cu&#x2014;Mn alloy layer, and an antioxidant film formed on the outer side of the alloy layer. The antioxidant film is one of a Sn-containing film, a noble metal film, and an organic substance film.

Electronic part and method for forming joint structure of electronic part and joining object

A joint structure that includes a first metal member, a second metal member, and a joint portion sandwiched between the first metal member and the second metal member. At least a Cu-M-Sn intermetallic compound is dispersed in the joint portion, M is at least one of Ni and Mn, and neither a CuSn layer nor a CuSnlayer is present on at least one of interfaces between the joint portion and the first metal member and the second metal member.

Joining method, joint structure, electronic device, method for manufacturing electronic device and electronic part

An electronic device has a printed substrate having land electrodes and a chip-type electronic component having external electrodes formed on a surface of a component element body. The land electrodes and the external electrodes are bonded via a solder to form electrode bonding parts. A thermosetting resin is filed between the electrode bonding parts. The bonding material contains solder particles having a melting point T1, a thermosetting resin having a curing temperature T2 that is higher than the melting point T1, and an activating agent having an activation temperature T3 that is lower than the curing temperature T2. The viscosity of the contained components except the solder particles at the melting point T1 is 0.57 Pa&#xb7;s or less, and the melting point T1 and the activation temperature T3 satisfy T1&#x2212;T3&#x3c;50&#xb0; C.

Electronic device, bonding material, and method for producing electronic device

A plating layer of a Cu-M-based alloy (M represents Ni and/or Mn) is formed on an end surface of a connection terminal member at an exposed side, the Cu-M-based alloy being capable of generating an intermetallic compound with an Sn-based low-melting-point metal contained in a bonding material forming a bonding portion and having a lattice constant different from that of the intermetallic compound by 50% or more. In the reflow process, even if the bonding material is about to flow out by re-melting thereof, since the bonding material is brought into contact with the Cu-M-based plating layer, a high-melting-point alloy of the intermetallic compound is formed so as to block the interface between the connection terminal member and the resin layer.

Electronic component module

An electronic part that includes an electronic part main body and an external electrode on the surface of the electronic part main body. The external electrode includes at least one alloy layer selected from among a Cu&#x2014;Ni alloy layer and a Cu&#x2014;Mn alloy layer, and a Sn-containing layer on the outer side of the alloy layer. The Sn-containing layer is the outermost layer of the external electrode. The Sn-containing layer is in contact with the alloy layer.

Electronic part

In joining a first metal member composed of a first metal to a second metal member composed of a second metal with a joining material interposed therebetween, the joining material including a low melting point metal having a lower melting point than the first metal and/or the second metal, the low melting point metal composing the joining material is Sn or an alloy containing Sn, at least one of the first metal and the second metal is a metal or an alloy which forms an intermetallic compound with the low melting point metal composing the joining material, and heat treatment is performed at a temperature at which the low melting point metal melts in a state of locating the joining material between the first metal member and the second metal member.

Joining method, method for producing electronic device and electronic part

A ceramic multilayer substrate incorporating a chip-type ceramic component, in which, even if the chip-type ceramic component is mounted on the surface of the ceramic multilayer substrate, bonding strength between the chip-type ceramic component and an internal conductor or a surface electrode of the ceramic multilayer substrate is greatly improved and increased. The ceramic multilayer substrate includes a ceramic laminate in which a plurality of ceramic layers are stacked, an internal conductor disposed in the ceramic laminate, a surface electrode disposed on the upper surface of the ceramic laminate, and a chip-type ceramic component bonded to the internal conductor or the surface electrode through an external electrode. The internal conductor or the surface electrode is bonded to the external electrode through a connecting electrode, and the connecting electrode forms a solid solution with any of the internal conductor, the surface electrode, and the external electrode.

Ceramic multilayer substrate and method for producing the same

A first joining object and a second joining object are joined to each other using an insert material. The first joining object and/or the second joining object has a first metal composed of Sn or an alloy containing Sn. The insert material contains, as a main component, a second metal which is an alloy containing at least one selected from among Ni, Mn, Al and Cr, and Cu, and is located between the first joining object and the second joining object. When subjected to heat treatment to produce an intermetallic compound of the first metal and the second metal, the first joining object and the second joining object are joined to each other.

Joining method, joint structure and method for producing the same

A method of joining a first metal member having at least a surface made of a first metal to a second metal member having at least a surface made of a second metal with a joining material sandwiched therebetween. The joining material includes a low melting point metal having a lower melting point than the first metal and/or the second metal. The low melting point metal composing the joining material is Sn or an alloy containing Sn. At least one of the first metal and the second metal is a metal or an alloy which forms an intermetallic compound with the low melting point metal, and which has a lattice constant difference of 50% or more from the intermetallic compound. The joining material located between the first metal member and the second metal member is heat-treated at a temperature at which the low melting point metal is melted.

The invention provides a solder paste which has a solidus temperature of 255&#xb0; C. or above and is improved in the wettability between Bi and Cu or Ag electrode to attain approximately equivalent wettability to those of Pb-containing high-temperature solders even in low-temperature soldering. The solder paste comprises a metal powder component consisting of Bi or a Bi alloy, a solidus temperature lowering metal for Bi, and a solid-phase metal capable of forming an intermetallic compound with the solidus temperature lowering metal, and a flux component.

Growing community of inventors

Nagaokakyo, Japan

Hidekiyo Takaoka