Tokyo Electron Limited

Hideki Yoshikawa

Yasuo Kobayashi

Kunihiro Tada

Yumiko Kawano

Joseph T Hillman

Hideaki Yamasaki

Yasuhiko Kojima

Tugrul Yasar

Kenichi Kubo

Vincent Vezin

A CVD reactor is provided with a precursor delivery system that is integrally connected to the reactor chamber. Liquid precursor such as a copper or other metal-organic precursor is atomized at the entry of a high flow-conductance vaporizer, preferably with the assistance of an inert sweep gas. Liquid precursor is maintained, when in an unstable liquid state, at or below room temperature. In the vaporizer, heat is introduced to uniformly heat the atomized precursor. The vaporized precursor is passed into a diffuser which diffuses the vapor, either directly or through a showerhead, into the reaction chamber.

Apparatus and method for delivery of precursor vapor from low vapor pressure liquid sources to a CVD chamber

A method for forming a titanium film and a titanium nitride film on a surface of a substrate by lamination, by which contamination of the substrate due to the by-product is suppressed and the contact resistance of the titanium film is reduced. The method comprises the steps of forming a titanium film on the surface of the substrate using a first process gas containing TiCl and a reducing gas, subjecting the substrate to a plasma process using a second process gas containing N gas and a reducing gas, thereby decreasing Cl in the titanium film and nitriding the surface of the titanium film to form a nitride layer, and forming a barrier metal (e.g., a titanium nitride film) on the titanium film having the nitride layer. Thus, the titanium film and the titanium nitride film are formed on the substrate by lamination. The second process gas contains N gas in a ratio of 0.5 or lower with respect to the reducing gas.

Method of forming a titanium film and a barrier film on a surface of a substrate through lamination

A method of forming a CVD-Ti film includes the steps of loading a Si wafer into a chamber, setting an interior of the chamber at a predetermined reduced-pressure atmosphere, introducing TiCl,gas, H,gas, and Ar gas into the chamber, and generating a plasma of the introduced gas in the chamber to form a Ti film in a hole formed in an SiO,film on the wafer. A wafer temperature is set to 400&deg; to 800&deg;, a supplied power is set to 100 W to 300 W, an internal chamber pressure is set to 0.5 Torr to 3.0 Torr, a flow rate ratio of TiCl,gas to a sum of H,gas and Ar gas is 1:100 to 1:300, and a flow rate ratio of H,gas to Ar gas is 1:1 to 2:1.

CVD-Ti film forming method

A method of forming a titanium film and a titanium nitride film on a substrate by lamination which method is capable of suppressing contamination of the substrate due to the by-product and of reducing a contact resistance value of the titanium film. By carrying out the step of forming a titanium film on a surface of a substrate, the step of subjecting the substrate to the plasma processing in an atmosphere of the mixed gas of nitrogen gas and hydrogen gas, thereby nitriding a surface layer of the titanium film to form thereon a nitride layer, and the step of forming a barrier film (e.g., a titanium nitride film) on the titanium film having the nitride layer formed thereon, both the titanium film and the titanium nitride film are formed on the substrate by lamination.

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Nirasaki, Japan

Hideki Yoshikawa