Shin-etsu Handotai Co., Ltd.

Other

Hideki Yamanaka

Masanori Kimura

Eiichi Iino

Makoto Iida

Masahiro Sakurada

Shozo Muraoka

Tomohiko Ohta

Tadahiro Ohmi

Shigetoshi Sugawa

Akinobu Teramoto

Kiyoshi Demizu

Shinichi Horie

The present invention has been made in order to manufacture a silicon semiconductor substrate used for a semiconductor integrated circuit device, higher in carrier mobility, especially in electron mobility, which is a carrier of an n-type FET, on a {100} plane as a main surface, and provides a silicon semiconductor substrate and a method for manufacturing the same, wherein the conventional RCA cleaning is employed without the use of special cleaning and the surface of the substrate is planarized at an atomic level to thereby decrease the surface roughness thereof without the use of the radical oxidation. The present invention provides a silicon semiconductor substrate comprising: a {110} plane or a plane inclined from a {110} plane as a main surface of the substrate; and steps arranged at an atomic level along a &#x3c;110&#x3e; orientation on the main surface.

Silicon semiconductor substrate and its manufacturing method

There is disclosed a method for producing a silicon single crystal in accordance with the Czochralski method wherein a crystal is pulled with controlling a temperature in a furnace so that &Dgr;G may be 0 or a negative value, where &Dgr;G is a difference between the temperature gradient Gc (&deg;C./mm) at the center of a crystal and the temperature gradient Ge (&deg;C./mm) at the circumferential portion of the crystal, namely &Dgr;G&equals;(Ge&minus;Gc), wherein G is a temperature gradient in the vicinity of a solid-liquid interface of a crystal from the melting point of silicon to 1400&deg; C., and with controlling a pulling rate in a range between a pulling rate corresponding to a minimum value of the inner line of OSF region and a pulling rate corresponding to a minimum value of the outer line, when OSF region is generated in an inverted M belt shape in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a diameter of the crystal and the vertical axis represent a pulling rate. There can be provided a method of producing a silicon single crystal wafer by CZ method wherein OSF in the ring shape distribution generated when being subjected to thermal oxidation or latent nuclei of OSF is present in a low density, and neither FPD, COP, L/D, LSTD nor defect detected by Cu decoration is present under a stable manufacture condition.

Silicon single crystal wafer and a method for producing it

In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface &plusmn;5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference &Dgr;G (&equals;Ge&minus;Gc) is not greater than 5&deg; C./cm, where Ge is a temperature gradient (&deg; C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (&deg; C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420&deg; C. and 1350&deg; C. or between a melting point of silicon and 1400&deg; C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.

Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same

There is disclosed a method for producing a silicon single crystal in accordance with the Czochralski method wherein a crystal is pulled with controlling a temperature in a furnace so that &Dgr;G may be 0 or a negative value, where &Dgr;G is a difference between the temperature gradient Gc (&deg; C./mm) at the center of a crystal and the temperature gradient Ge (&deg; C./mm) at the circumferential portion of the crystal, namely &Dgr;G&equals;(Ge&minus;Gc), wherein G is a temperature gradient in the vicinity of a solid-liquid interface of a crystal from the melting point of silicon to 1400&deg; C., and with controlling a pulling rate in a range between a pulling rate corresponding to a minimum value of the inner line of OSF region and a pulling rate corresponding to a minimum value of the outer line, when OSF region is generated in an inverted M belt shape in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a diameter of the crystal and the vertical axis represent a pulling rate. There can be provided a method of producing a silicon single crystal wafer by CZ method wherein OSF in the ring shape distribution generated when being subjected to thermal oxidation or latent nuclei of OSF is present in a low density, and neither FPD, COP, L/D, LSTD nor defect detected by Cu decoration is present under a stable manufacture condition.

Silicon single crystal wafer and method for producing it

A method for producing a silicon monocrystal according to Czochralski method characterized in growing crystal with controlling a pulling rate between a transition pulling rate Pc at which there is caused a transition from a region where excess vacancies are present, but grown-in defect is not present to a region where excess interstitial silicon atoms are present, but an agglomerate thereof is not present, and a transition pulling rate Pi from a region where excess interstitial silicon atoms are present, but an agglomerate thereof is not present to a region where an agglomerate of interstitial silicon atoms is present. There are provided a method for producing a silicon monocrystal having no defect through the whole area of the wafer and having high quality wherein a deviation of amount of precipitated oxygen is small by pulling a crystal with controlling a pulling rate P as a general and interoperable valuable, and the silicon monocrystal produced thereby.

Method for producing silicon monocrystal and silicon monocrystal wafer

In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface.+-. 5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference .DELTA.G (=Ge-Gc) is not greater than 5.degree. C./cm, where Ge is a temperature gradient (.degree. C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (.degree. C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420.degree. C. and 1350.degree. C. or between a melting point of silicon and 1400.degree. C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.

Method and apparatus for manufacturing a silicon single crystal having

In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface .+-.5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference .DELTA.G (=Ge-Gc) is not greater than 5.degree. C./cm, where Ge is a temperature gradient (.degree.C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (.degree.C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420.degree. C. and 1350.degree. C. or between a melting point of silicon and 1400.degree. C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.

Growing community of inventors

Fukushima-ken, Japan

Hideki Yamanaka