Sumitomo Electric Industries, Limited

Konoshima Chemical Co., Ltd.

Nipro Corporation

Sumitomo Pharmaceuticals Company Limited

Sumitomo Electric Device Innovations, Inc.

Kabushikikaisha Kenwood

Nec Corporation

Nissho Corporation

Hideki Yagi

Takamitsu Kitamura

Yoshihiro Yoneda

Ryuji Masuyama

Naoko Konishi

Takagimi Yanagitani

Naoya Kono

Hirohiko Kobayashi

Takuya Okimoto

Takehiko Kikuchi

Takuo Hiratani

Naohito Ohashi

Hiroyuki Yoshinaga

Naoki Fujiwara

Daisuke Kimura

Masafumi Aramata

Hoshiteru Nozawa

Naoko Inoue

Yoshikazu Suzuki

Hikaru Kouta

Hitoshi Futagawa

Atsuyuki Kojima

Masataka Watanabe

Masahumi Kitano

Masaki Tsunekane

Toshiyuki Nitta

Katsuji Mukaihara

Kenji Sakurai

Shuetsu Kudo

Kazuhiro Nakano

Akira Miyagishi

Koji Ebihara

Satoru Igarashi

Tsuyoshi Noguchi

Akira Furuya

Munetaka Kurokawa

Yutaka Onishi

Kenji Koyama

Kenji Hiratsuka

Naoaki Yasumura

Masami Muraoka

Nobuhiko Nishiyama

Toshio Nomaguchi

Kuniaki Ishihara

Toshikazu Hirayama

Teruhisa Hirobe

Yoshihisa Murai

Hajime Shoji

Takeshi Oguro

Shunsuke Hosokawa

Hitoshi Kubo

Seiki Imagawa

Katsuhisa Ioriya

Takuya Mitarai

Yasuhiro Morita

Ichiro Wakioka

A light receiving device includes a semiconductor substrate having a first major surface and a second major surface opposite to the first major surface, and a metal pattern layer provided on the second major surface. The first major surface is provided with a first input port configured to receive an input of signal light, a second input port configured to receive an input of local oscillation light, a first light receiving element optically coupled to the first input port, an optical 90 degree hybrid element optically coupled to the first input port and the second input port, and a second light receiving element optically coupled to the optical 90 degree hybrid element. The metal pattern layer contains at least one of titanium or chromium.

Light receiving device and light receiving apparatus

A photo receiver includes a photo detector including a semiconductor substrate having a first main surface and a second main surface and a metal pattern layer provided on the second main surface; and a carrier including a supporting substrate having a third main surface facing the second main surface and a solder pattern layer provided on the third main surface. The solder pattern layer is bonded to the metal pattern layer. The first main surface is provided with a variable optical attenuator, an optical 90-degree hybrid device, and a plurality of photodiodes optically coupled to the variable optical attenuator via the optical 90-degree hybrid device. The solder pattern layer and the metal pattern layer are located in a peripheral area surrounding a central area where the variable optical attenuator and the optical 90-degree hybrid device are located when viewed in the normal direction of the first main surface.

Photo receiver

A semiconductor optical device includes a substrate including a waveguide made of silicon and a semiconductor layer joined to the substrate so as to overlap the waveguide and including a diffraction grating formed of a first semiconductor layer and a second semiconductor layer having different refractive indices. The waveguide includes a bent portion and a plurality of straight portions that are connected to each other by the bent portion and that extend straight. The first semiconductor layer and the second semiconductor layer are each made of a compound semiconductor. The second semiconductor layer is embedded in the first semiconductor layer and includes a plurality of portions arranged in a direction in which the plurality of straight portions extend. The diffraction grating is positioned above the plurality of straight portions.

Semiconductor optical device and method for manufacturing the same

A method for producing a semiconductor optical device includes the steps of bonding a semiconductor chip to an SOI substrate having a waveguide, the semiconductor chip having an optical gain and including a first cladding layer, a core layer, and a second cladding layer that contain III-V group compound semiconductors and are sequentially stacked in this order, forming a covered portion with a first insulating layer on the second cladding layer, etching partway in the thickness direction the second cladding layer exposed from the first insulating film, forming a second insulating film covering from the covered portion to a part of a remaining portion of the second cladding layer, and forming a first tapered portion that is disposed on the waveguide and tapered along the extending direction of the waveguide by etching the core layer and the second cladding layer exposed from the second insulating film.

Semiconductor optical device and method for producing semiconductor optical device

A wavelength tunable laser device includes a substrate including silicon, the substrate having a waveguide, a first semiconductor element bonded to the substrate, the first semiconductor element including an active layer of a group III-V compound semiconductor, and a second semiconductor element bonded to the substrate, the second semiconductor element facing to the first semiconductor element in a direction along which light emitted from the first semiconductor element propagates, the second semiconductor element including a grating formed of a group III-V compound semiconductor. The grating selects a wavelength of light.

Wavelength tunable laser device and method for manufacturing the same

A semiconductor optical device includes an SOI substrate having a waveguide of silicon, and at least one gain region of a group III-V compound semiconductor having an optical gain bonded to the SOI substrate. The waveguide has a bent portion and multiple linear portions extending linearly and connected to each other through the bent portion. The gain region is disposed on each of the multiple linear portions.

Semiconductor optical device

A method for manufacturing an optical semiconductor device, includes the steps of: forming a plurality of compound semiconductor layers including a sacrificial layer, an absorption layer, and a core layer; forming a first mesa from the plurality of compound semiconductor layers; forming an embedding layer that is a semiconductor layer having the first mesa embedded therein; after the step of forming the embedding layer, etching the sacrificial layer to form a chip including the plurality of compound semiconductor layers and the embedding layer; bonding the chip to a substrate comprising silicon and having a waveguide; and etching a portion of the first mesa of the chip bonded to the substrate to form a second mesa adjacent to the first mesa. The second mesa includes the core layer and is optically coupled to the waveguide of the substrate.

Optical semiconductor device and method for manufacturing optical semiconductor device

A method for producing a semiconductor device includes a step of bonding a chip to a SOI wafer, the chip being formed of a III-V group compound semiconductor and including a substrate and a first semiconductor layer; and a step of removing the substrate and the first semiconductor layer from the chip after the step of bonding. In the producing method, the first semiconductor layer has a tensile strain, and the SOI wafer and the chip are heated to a first temperature in the step of bonding, and are cooled to a second temperature lower than the first temperature after the step of bonding.

Semiconductor device and method for producing semiconductor device

A photo detector includes a variable optical attenuator provided on a substrate, an optical 90-degree hybrid device provided on the substrate, and a plurality of photodiodes provided on the substrate. The plurality of photodiodes are optically coupled to the variable optical attenuator via the optical 90-degree hybrid device. The variable optical attenuator includes an optical waveguide disposed on the substrate, a heater configured to heat the optical waveguide, and an insulating layer at least partially disposed between the substrate and the optical waveguide.

Photo detector and method for producing photo detector

Provided is a transparent rare earth aluminum garnet ceramic that has a highlight transmission rate and can be mass produced. The transparent rare earth aluminum garnet ceramic is represented by general formula RAlO(R is an element selected from the group consisting of rare earth elements having an atomic number of 65 to 71) and includes Si and Y as sintering aids, or is represented by general formula RAlO(R is an element selected from the group consisting of rare earth elements having an atomic number of 65 to 70) and includes Si and Lu as sintering aids.

Transparent rare earth aluminum garnet ceramics

An optical semiconductor device comprises a semiconductor substrate, an optical 90-degree hybrid circuit provided on the substrate, a plurality of input optical waveguides provided on the substrate, and a plurality of output optical waveguides provided on the substrate. The plurality of input optical waveguides is optically coupled to input ends of the optical 90-degree hybrid circuit. The plurality of output optical waveguides is optically coupled to output ends of the optical 90-degree hybrid circuit. Each of the plurality of input optical waveguides includes a first curving portion and a first straight portion adjacent to the first curving portion, and each of the plurality of output optical waveguides includes a second curving portion. A central axis of the first curving portion is inwardly offset with respect to a central axis of the first straight portion, and a central axis of the second curving portion follows a raised sine curve.

Optical semiconductor device

A method for fabricating a light receiving device includes: preparing a first substrate product which includes a semiconductor region having a common semiconductor layer, a first semiconductor laminate for a photodiode, a second semiconductor laminate for a waveguide, and a butt-joint between the first semiconductor laminate and the second semiconductor laminate, the first laminate and the second semiconductor laminate being disposed on the common semiconductor layer; etching the first substrate product with a first mask to form a second substrate product having a photodiode mesa structure produced from the first semiconductor laminate and a preliminary mesa structure produced from the second semiconductor laminate; etching the second substrate product with the first mask and a second mask, formed on the photodiode mesa structure; to produce a waveguide mesa structure from the preliminary mesa structure, and the waveguide mesa structure having a height larger than that of the preliminary mesa structure.

Light receiving device, method for fabricating light receiving device

A semiconductor integrated optical device includes: a supporting base including semi-insulating semiconductor; a first photoelectric convertor having first photodiode mesas; a second photoelectric convertor having second photodiode mesas; a first 90&#xb0; optical hybrid having at least one first multimode waveguide mesa; a second 90&#xb0; optical hybrid having at least one second multimode waveguide mesa; an optical divider mesa; first and second input waveguide mesas coupling the first and second 90&#xb0; optical hybrids with the optical divider mesa, respectively; a conductive semiconductor region disposed on the supporting base, the conductive semiconductor region mounting the first photodiode mesas, the second photodiode mesas, the first multimode waveguide mesas, the second multimode waveguide mesas, and the optical divider mesa; a first island semiconductor mesa extending between the first and second multimode waveguide mesas; and a first groove extending through the first island semiconductor mesa and the conductive semiconductor region to the semi-insulating semiconductor.

Semiconductor integrated optical device

A hybrid optical assembly includes: a photonic device having a waveguide structure including group IV semiconductor and oxide; and an optical source device including group III-V semiconductor. The source device is bonded to the photonic device. The source device and the waveguide structure are arranged in a direction of a first axis. The source device has a first semiconductor mesa including an upper core layer and a first upper cladding layer and a second semiconductor mesa including a lower core layer and a second upper cladding layer. The first and second semiconductor mesas extend in a direction of a second axis intersecting the first axis. The second semiconductor mesa has a length larger than that of the first semiconductor mesa. The lower core layer, the second upper cladding layer, and the upper core layer and the first upper cladding layer are arranged in the direction of the first axis.

Hybrid optical assembly and method for fabricating same

Provided is a transparent rare earth aluminum garnet ceramic that has a high light transmission rate and can be mass produced. The transparent rare earth aluminum garnet ceramic is represented by general formula RAlO(R is an element selected from the group consisting of rare earth elements having an atomic number of 65 to 71) and comprises Si and Y as sintering aids, or is represented by general formula RAlO(R is an element selected from the group consisting of rare earth elements having an atomic number of 65 to 70) and comprises Si and Lu as sintering aids.

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Yokohama, Japan

Hideki Yagi