Mitsubishi Denki Kabushiki Kaisha

Hideki Yabe

Kenji Marumoto

Sunao Aya

Koji Kise

Kaeko Kitamura

Kei Sasaki

Hiroshi Watanabe

Hiroaki Sumitani

Takashi Hifumi

Kouji Kise

Koichi A Ono

Akihiko Furukawa

Tomohiro Sasagawa

Nobuyuki Yoshioka

Tsuyoshi Horikawa

Akihiro Suzuki

Takaaki Kawahara

Toshiyuki Oishi

Taisuke Furukawa

Naohiko Fujino

Noboru Mikami

Kenyu Haruta

Hitoshi Wakata

Kenichi Kuroda

Mutsumi Tsuda

Yuichi Sakai

Yoshitatsu Kawama

Munehito Kumagai

Junji Tanimura

Tetsuya Takami

Kazuyoshi Kojima

Kazuo Kuramoto

Masamitsu Okamura

Masao Kouhashi

Yoshio Saito

Yukihiko Wada

Yasuyuki Nakaoka

Keisuke Nanba

Akimasa Yuki

Tetsuo Makita

Hiroshi Kuroki

Tetsuo Ogama

Yasuji Matsui

Shigeto Ami

A sensor chip breaking strength inspection apparatus that performs sensor chip breaking strength inspection on a semiconductor wafer on which a plurality of sensor chips having a diaphragm portion are disposed includes: a stage on which the semiconductor wafer is mounted; and a nozzle that emits a medium onto the sensor chips at a pressure equivalent to a standard breaking strength of the sensor chips.

Sensor chip breaking strength inspection apparatus and sensor chip breaking strength inspection method

In an x-ray absorber in accordance with the present invention, reduced transmittance of the x-ray absorber is suppressed while phase shift amount in the vicinity of &#x3c0;-radians is achieved. For this purpose, a material is used that has a high transmittance per film thickness and contains an element with a high phase shift amount and an element with a low transmittance, as a material composition that forms the x-ray absorber. In other words, the transmittance of the x-ray absorber is mainly determined by the element with a low transmittance, and phase shift falling short of &#x3c0;-radians is compensated with the element with a high transmittance and a high phase shift.

X-ray mask

An X-ray absorber is deposited on a membrane. A stress adjust step is applied so that the average film stress of the X-ray absorber is 0. After patterning the X-ray absorber, the position accuracy of the pattern is measured. Then, a stress adjust process is applied to the patterned X-ray mask. Accordingly, a stress adjustment method is used to acquire an X-ray mask that has no pattern position offset of the X-ray absorber.

Stress adjustment method of X-ray mask

X-ray mask provided with an alignment mark and method of manufacturing the same

A thin film forming apparatus using laser includes a chamber (1), a target (5) placed therein, a laser light source (10) for emitting laser beam to target (5), and a substrate holder (3). When target (5) is irradiated with laser beam (16), a plume (15) is generated, and materials included in plume (15) are deposited on the surface of a substrate (2) held by substrate holder (3). The laser beam emitted from laser light source (10) has its cross section shaped to a desired shape when passed through a shielding plate (4804), for example, so that the surface of the target (5) is irradiated with the beam having uniform light intensity distribution. Therefore, a plume (15) having uniform density distribution of active particles is generated, and therefore a thin film of high quality can be formed over a wide area with uniform film quality, without damaging the substrate.

Thin film forming apparatus using laser

The X-ray mask manufactured according to the present invention can solve a problem that the thin film stress of the X-ray absorber cannot be made to be zero although the mean thin film stress throughout the X-ray absorber can be made to be zero. The thin film stress distribution over the X-ray absorber 4 after the X-ray absorber 4 has been formed on a silicon substrate 1 is measured, and then inputs of electric power to heaters 9a, 9b and 9c of a hot plate 8 are changed so as to heat the X-ray absorber 4 to temperatures according to a specified temperature distribution with which the thin film stress throughout the X-ray absorber can be made to be zero.

Method of manufacturing X-ray mask and heating apparatus

An antireflection film formed on a membrane of an X-ray mask has an amorphous structure. A patterned X-ray absorber intercepting transmission of X-rays is formed to be in contact with the front surface of the antireflection film. Thus, an X-ray mask having excellent pattern positional accuracy and a method of fabricating the same are obtained.

X-ray mask and method of fabricating the same

A film-forming method and an apparatus for a X-ray mask and a film-forming apparatus which are able to diminish stress unevenness in the X-ray mask to zero when a X-ray absorber is formed on a mask substrate by sputtering a target 3 during rotation of the mask substrate. Firstly, a dummy mask substrate is prepared instead of a mask substrate. A dummy X-ray absorber 6 is formed on this dummy X-ray substrate 5 within a sputtering range. Secondly, a stress distribution is measured at every position along a straight line passing through a center of the dummy X-ray absorber 6 and then a desirable stress distribution range X is selected at such a location so as to have a good linear characteristic in a portion of a compressive stress curve which decreases toward an outer periphery of the dummy X-ray absorber 6 in the stress distribution. A center of the desirable stress distribution range X is selected as a rotation center, the mask substrate is placed within the desirable stress distribution range X, and the X-ray absorber is formed by this film-forming technology.

Film-forming method for X-ray mask

A method of making a X-ray mask including: a step of forming a X-ray absorber above a substrate; a step of controlling a stress of the X-ray absorber by a predetermined condition; and wherein the predetermined condition for controlling the stress of the X-ray absorber formed above the substrate is determined by a measured value of a stress of a X-ray absorber formed on a monitor substrate.

Method of making X-ray mask having reduced stress

In order to provide an X-ray absorber low in the internal stress and suitable for forming a high accurate pattern and its fabrication method, an X-ray absorber for an X-ray mask is intended to contain tungsten and nitrogen, or tungsten, titanium and nitrogen, and to have an amorphous structure.

X-ray mask and its fabrication method

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Tokyo, Japan

Hideki Yabe