Semiconductor Energy Laboratory Co., Ltd.

Hideki Uochi

Shunpei Yamazaki

Yasuhiko Takemura

Hongyong Zhang

Kengo Akimoto

Shigeki Komori

Hajime Kimura

Takahiro Kasahara

Tomoya Futamura

Toru Takayama

Toshimitsu Konuma

Akira Mase

Hideomi Suzawa

Hideto Ohnuma

Naoaki Yamaguchi

Jun Koyama

Yasuo Nakamura

Junpei Sugao

Akiharu Miyanaga

Masahiro Takahashi

Hideyuki Kishida

Takeshi Fukunaga

Akira Sugawara

Yukiko Uehara

Yoko Chiba

Rihito Wada

Masaaki Hiroki

Atsunori Suzuki

Yoshiaki Oikawa

Hiroki Adachi

Koichiro Kamata

Daisuke Kawae

Atsushi Miyaguchi

Itaru Koyama

Hideki Nemoto

Hisao Ikeda

Hiroyuki Miyake

Yoshiyuki Kurokawa

Hisashi Ohtani

Junichiro Sakata

Hideaki Kuwabara

Daisuke Kubota

Masahiko Hayakawa

Takanori Matsuzaki

Kensuke Yoshizumi

Tatsuya Onuki

Satoru Okamoto

Toshihiko Saito

Mitsunori Sakama

Yuki Okamoto

Takahiko Ishizu

Minoru Miyazaki

Roh Yamamoto

Mutsuo Yamamoto

Akane Murakami

Akira Miyanaga

Hognyong Zhang

Yutaka Shionoiri

Koji Kusunoki

Kouhei Toyotaka

Hiromichi Godo

Shuhei Nagatsuka

Tetsuhiro Tanaka

Akio Endo

Hitoshi Kunitake

Yosuke Tsukamoto

Tatsunori Inoue

Michiko Takei

Kazuki Tsuda

Tatsuya Ohori

A semiconductor device that has reduced power consumption and is capable of non-destructive reading is provided. The semiconductor device includes a first circuit including a first transistor and a first FTJ element, and a second circuit including a second transistor and a second FTJ element. A first terminal of the first transistor is electrically connected to an output terminal of the first FTJ element, and a first terminal of the second transistor is electrically connected to an input terminal of the second FTJ element. A second terminal of the first transistor and a second terminal of the second transistor are electrically connected to a read circuit. In a data writing method, a voltage is applied between the input terminal and the output terminal of each of the first FTJ element and the second FTJ element to polarize the first FTJ element and the second FTJ element. In a data reading method, a differential current flowing through the first FTJ element and the second FTJ element is input to the read circuit.

Semiconductor device with first and second elements and electronic device

A highly reliable memory device is provided. On a side surface of a first conductor extending in a first direction, a first insulator, a first semiconductor, a second insulator, a second semiconductor, and a third insulator are provided in this order when seen from the first conductor side. The first conductor is provided with a first region overlapping with a second conductor with the first insulator, the first semiconductor, the second insulator, the second semiconductor, and the third insulator provided therebetween, and a second region overlapping with a third conductor with the first insulator, the first semiconductor, the second insulator, the second semiconductor, and the third insulator provided therebetween. In the second region, a fourth conductor is provided between the first insulator and the first semiconductor.

Memory device

A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

Display device comprising pixel portion and non-linear element including oxide semiconductor layer

A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen and having a channel protective layer over a semiconductor layer to be a channel formation region overlapping a gate electrode layer and a pixel electrode layer electrically connected to the inverted staggered thin film transistor. In the periphery of the pixel portion in this display device, a pad portion including a conductive layer made of the same material as the pixel electrode layer is provided. In addition, the conductive layer is electrically connected to a common electrode layer formed on a counter substrate.

Semiconductor device

A semiconductor device having favorable display quality is provided. The semiconductor device is provided with a display portion, a line-of-sight sensor portion, a control portion, and an arithmetic portion. The line-of-sight sensor portion has a function of obtaining first information showing a direction of a user's line of sight. The arithmetic portion has a function of determining a first region including a gaze point of the user on the display portion with use of the first information and a function of increasing a definition of an image displayed on the first region. Light emitted from the display portion may be used to obtain the first information showing the direction of the line of sight.

Semiconductor device and electronic device

It is an object of the present invention to apply a sufficient electrical field to a liquid crystal material in a horizontal electrical field liquid crystal display device typified by an FFS type. In a horizontal electrical field liquid crystal display, an electrical field is applied to a liquid crystal material right above a common electrode and a pixel electrode using plural pairs of electrodes rather than one pair of electrodes. One pair of electrodes includes a comb-shaped common electrode and a comb-shaped pixel electrode. Another pair of electrodes includes a common electrode provided in a pixel portion and the comb-shaped pixel electrode.

Liquid crystal display device

A highly reliable memory device is provided. On a side surface of a first conductor extending in a first direction, a first insulator, a first semiconductor, a second insulator, a second semiconductor, and a third insulator are provided in this order when seen from the first conductor side. A first region overlapping with a second conductor with the first insulator, the first semiconductor, the second insulator, the second semiconductor, and the third insulator therebetween, and a second region overlapping with a third conductor with the first insulator, the first semiconductor, the second insulator, the second semiconductor, and the third insulator therebetween are provided in the first conductor. In the second region, a fourth conductor is provided between the first insulator and the first semiconductor.

A novel memory device is provided. The memory device includes a plurality of memory cells, and one memory cell includes a first transistor and a second transistor. One of a source and a drain of the first transistor is electrically connected to a gate of the second transistor through a node SN. Data written through the first transistor is retained at the node SN. When an OS transistor is used as the first transistor, formation of a storage capacitor is not needed. A region with a low dielectric constant is provided outside the memory cell, whereby noise from the outside is reduced and stable operation is achieved.

Memory device and electronic device

A novel storage device is provided. The storage device includes a first wiring, a second wiring, and a first memory cell. The first memory cell includes a first transistor and a first magnetic tunnel junction device. One of a source or a drain of the first transistor is electrically connected to a first wiring. The other of the source or the drain of the first transistor is electrically connected to one terminal of the first magnetic tunnel junction device. Another terminal of the first magnetic tunnel junction device is electrically connected to the second wiring. The first transistor includes an oxide semiconductor in its channel formation region.

Storage device, electronic component, and electronic device

A highly reliable display device is provided. In a flexible display device including at least a first display region and a second display region, at least a portion of a wiring provided in the first display region or the second display region has a meandering shape or a chain-like shape. Since the wiring has a meandering shape or a chain-like shape, a short-circuit, a disconnection, or the like of the wiring due to curving or bending of the display device does not occur easily. The wiring having a meandering shape or a chain-like shape can prevent defective operation, lowered reliability, or the like of the display device.

Display device and electronic device

By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

Semiconductor device and method for manufacturing the same

A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

Display device

A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.

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Kanagawa, Japan

Hideki Uochi