Showa Denko K.k.

Hitachi, Ltd.

Hideki Tomozawa

Yoshihiro Saida

Yoshiaki Ikenoue

Masato Kobayakawa

Hisayuki Miki

Fumio Murai

Mineo Okuyama

Yasunori Suzuki

Ryuma Takashi

Takaki Yasuda

Noritaka Muraki

Hiromitsu Sakai

Tetsuo Sakurai

Junya Kato

Reiko Ichikawa

Joseph Gaze

Akira Bandoh

Syunji Horikawa

Yukie Akakabe

Soichiro Masuyama

A flip-chip type semiconductor light-emitting device having a positive electrode and a negative electrode similar in electrode area and capable of preventing the misalignment of the light-emitting device by utilizing the self alignment effect in manufacturing a light-emitting diode lamp and a printed circuit board for the flip-chip type semiconductor light-emitting device are provided. Furthermore, adopted are a flip-chip type semiconductor light-emitting devicewhich is provided with a negative electrode pad and a positive electrode pad formed on the side opposite the transparent substrate side of the semiconductor layer, wherein each of the electrode pads is formed in the same shape as each other and a printed circuit board for the light-emitting device has a pair of the electrode patterns which are formed in the same shape as each other. Still furthermore, a soldering film is included in each of the electrode pads.

Flip-chip type semiconductor light-emitting device, method for manufacturing flip-chip type semiconductor light-emitting device, printed circuit board for flip-chip type semiconductor light-emitting device, mounting structure for flip-chip type semiconductor light-emitting device, and light-emitting diode lamp

An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits. The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.

N-type group III nitride semiconductor layered structure

A pn junction type Group III nitride semiconductor light-emitting device() of the present invention has a light-emitting layerof multiple quantum well structure in which well layersand barrier layersincluding Group III nitride semiconductors are alternately stacked periodically between an n-type clad layerand a p-type clad layerwhich are formed on a crystal substrate and which include Group III nitride semiconductors, in which one end layerof the light-emitting layeris closest to and opposed to the n-type clad layer, and the other end layerof the light-emitting layeris closest to and opposed to the p-type clad layer, both the one and the other end layers are barrier layers, and the other end layeris thicker than the barrier layer of the one end layer.

Pn junction type group III nitride semiconductor light-emitting device

A nitride semiconductor product including an n-type layer, a light-emitting layer, and a p-type layer which are formed of a nitride semiconductor and sequentially stacked on a substrate in the above order, the light-emitting layer having a quantum well structure in which a well layer is sandwiched by barrier layers having band gaps wider than the band gap of the well layer. Each barrier layer includes a barrier sublayer C which has been grown at a temperature higher than a growth temperature of the well layer, and a barrier sublayer E which has been grown at a temperature lower than a growth temperature of the barrier sublayer C. The barrier sublayer C is disposed closer to the substrate with respect to the barrier sublayer E.

Nitride semiconductor; light-emitting device, light-emitting diode, laser device and lamp using the semiconductor; and production methods thereof

A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity element and, in combination therewith, hydrogen.

Gallium nitride-based semiconductor device

A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride (GaN) compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity and, in combination therewith, hydrogen. The top portion includes a region containing a Group III element and a Group V element at a non-stoichiometric atomic ratio.

An object of the present invention is to provide a light-permeable electrode for use in a gallium nitride-based compound semiconductor light-emitting device, the electrode having improved light permeability and contact resistance. The inventive electrode comprises a light-permeable first layer which is in contact with a surface of a p-contact layer in a gallium nitride-based compound semiconductor light-emitting device and which is capable of providing ohmic contact, and a second layer which is in contact with a part of a surface of said p-contact layer, wherein the first layer comprises a metal, or an alloy of two or more metals, selected from a first group consisting of Au, Pt, Pd, Ni, Co, and Rh, and the second layer comprises an oxide of at least one metal selected from a second group consisting of Ni, Ti, Sn, Cr, Co, Zn, Cu, Mg, and In.

Gallium nitride-based compound semiconductor light-emitting device and electrode for the same

An antistatic agent comprising a water-soluble electroconductive polymer comprising at least a repeating unit having a sulfo group-containing isothianaphthenylene structure; a method for suppressing electrification of an article during the production or use of the article by forming an electroconductive film comprising the water-soluble electroconductive polymer on the article; an article of which electrification is suppressed by having an electroconductive film comprising the water-soluble conductive polymer on the article; and a method for observing or inspecting an article with suppressing electrification thereof during irradiation with charged particle beams by forming an electroconductive film comprising the water-soluble electroconductive polymer on the article. The electroconductive film retains the electrification-suppressing effect and removability stably even when subjected to a heat treatment or left to stand for a long period of time. The antistatic agent can be formulated into a film-forming antistatic composition which can be used at any pH value from acidic to basic and which is excellent in storage stability.

Method for suppressing electrification and for observing or inspecting

Electrification is suppressed with a water-soluble electrification-suppressing film having an electron conductivity and comprising a polymer resin. A high electrification-suppressing effect which is also high in vacuum can be easily obtained by using the electrification-suppressing film with less contamination.

Growing community of inventors

Ichihara, Japan

Hideki Tomozawa