Sony Corporation

Sony Group Corporation

Hideki Tanaka

Naoki Saka

Daisaku Okamoto

Shizunori Matsumoto

Haruhisa Naganokawa

Yuuichi Kaji

There is provided a field-effect transistor including: a gate electrode; a semiconductor layer having a source region and a drain region with the gate electrode in between; contact plugs provided on the source region and the drain region; first metals stacked on the contact plugs; and a low-dielectric constant region provided in a region between the first metals along an in-plane direction of the semiconductor layer and provided at least in a first region below bottom surfaces of the first metals along a stacking direction.

Field-effect transistor, method of manufacturing the same, and radio-frequency device

A comparator includes: a first amplifying unit that includes a differential pair configured with a pair of transistors which are first and second transistors, and amplifies a difference of signals input to each of the gate electrodes of the first and second transistors, to output; a second amplifying unit that amplifies the signal output from the first amplifying unit; a third transistor that connects the first transistor to a power source voltage; a fourth transistor that connects the second transistor to the power source voltage; a fifth transistor that connects a connection point of gate electrodes of the third transistor and the fourth transistor to a drain of the third transistor; and a sixth transistor that connects a connection point of gate electrodes of the third transistor and the fourth transistor to a drain of the fourth transistor.

Comparator, solid-state imaging device, electronic apparatus, and driving method

A comparator includes: a first amplifying unit that includes a differential pair configured with a pair of transistors which are first and second transistors, and amplifies a difference of signals input to each of the gate electrodes of the first and second transistors, to output; a second amplifying unit that amplifies the signal output from the first amplifying unit; a first condenser that is disposed between a gate electrode of the first transistor and a reference signal supply unit; a second condenser that is disposed between a gate electrode of the second transistor and a pixel signal wiring; a third transistor that connects a connection point of the gate electrode of the first transistor and the first condenser to the pixel signal wiring; and a fourth transistor that connects a connection point of the gate electrode of the second transistor and the second condenser to the pixel signal wiring.

Growing community of inventors

Kagoshima, Japan

Hideki Tanaka