Matsushita Electric Industrial Co., Ltd.

Hideki Takehara

Noriyuki Yoshikawa

Kunihiko Kanazawa

Seiichi Nakatani

Susumu Tsumura

In the high-frequency module of the present invention, an insulating resin is formed so as to seal a high-frequency semiconductor element mounted on a surface of a substrate and further to seal electronic components. Furthermore, a metal thin film is formed on the surface of the insulating resin. This metal thin film provides an electromagnetic wave shielding effect.

High-frequency module and method for manufacturing the same

One side of a ceramic multilayer board is attached to a resin film with adhesive, the resin film is mounted on a mold for resin sealing having a cavity provided in desired position, the position of the board is controlled by pressing against a portion of the resin film by a portion of the mold for sealing, and thereafter sealing is conducted by filling an epoxy resin into the cavity. The thus prepared semiconductor device has a rear face on which electrodes for connecting to outside are exposed, and the sealing resin is formed so as to be flush with respect to the rear face of the board, surround the periphery of the board, and form a cross section in a rectangular shape. With this configuration, the semiconductor device free from a crack can be sealed with resin.

Method of manufacturing semiconductor device with ceramic multilayer board

A high-frequency semiconductor device is provided with a ceramic substrate, an element group including semiconductor elements and passive components mounted onto a bottom portion of the ceramic substrate, and a composite resin material layer formed on the bottom portion of the ceramic substrate so as to bury the element group. The composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, and has a flat bottom surface on which electrodes for connecting to the outside are formed. As packaging of a structure in which the receiving system and the transmitting system are formed in a single unit, such as an RF module, the high-frequency semiconductor device achieves a small size, a high mounting density, and excellent heat release properties.

High-frequency semiconductor device

The present invention provides a semiconductor device comprising as a core substrate a high thermo conductive ceramic substrate having circuit patterns on opposed surfaces. The high thermo conductive ceramic substrate has on one surface a first circuit board of at least one layer having a first cavity structure, and on the other surface a second circuit board of at least one layer having a second cavity structure. A first active element is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the first cavity, a second active element is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the second cavity, an external electrode is integrated with the surface of the second circuit board, and the first circuit board surface is equipped with a cap or sealed with resin. A heat dissipation via is formed on the second circuit board, the high thermo conductive ceramic substrate and the external electrode on the surface of the second circuit board are connected thermally to each other, and heat of at least one active element selected from the first active element and the second active element is dissipated outward through the high thermo conductive ceramic substrate, the heat dissipation via and the external electrode on the surface of the second circuit board. The semiconductor device is downsized while securing transverse strength and heat dissipation characteristics of a heat-generating semiconductor element.

Growing community of inventors

Kobe, Japan

Hideki Takehara