Mitsubishi Electric Corporation

Mitsubishi Electric Cornoration

Hideki Shimauchi

Yoshinori Tatenuma

Masahiro Yokotani

Akira Koshimizu

Yuji Kawano

Akio Kamimurai

Kazuyasu Nishikawa

Hiroshi Kobayashi

Manabu Tsukamoto

Tetsuo Amano

Akira Takashima

Shuichi Ueno

Takafumi Hara

Takashi Tokunaga

Hiroshi Fujita

Yusuke Kato

Shinichi Hosomi

Kanji Kitamura

Kaito Takeshima

Tomoki Kuwamura

Masatoshi Uchino

Takeharu Umegami

Mutsuo Daito

A connector includes: a housing portion in which a plurality of conductive terminals having an L-shape are covered by a resin; and a connector portion in which one end portions of the conductive terminals are exposed from the resin to serve as connector terminals. The plurality of conductive terminals are disposed so as to be arranged along a plane. When the plane is defined as a yz-plane and a direction in which the connector terminals are arranged is defined as a z-axis direction, the connector terminals are disposed so as to be arranged with an interval therebetween in the z-axis direction, and a width in an x-axis direction of the housing portion is increased in accordance with a distance in a y-axis direction from the connector portion.

Connector

A magnetic sensor capable of preventing degradation of magnetic measurement accuracy is obtained. The magnetic sensor includes a first sensor portion, a second sensor portion, and a connection portion. The first sensor portion extends in a first direction. The second sensor portion is disposed at an interval from the first sensor portion in a second direction orthogonal to the first direction. The first sensor portion includes a first end and a second end that are ends in the first direction. The second sensor portion includes a third end and a fourth end that are ends in the first direction. The connection portion connects the second end and the third end. The first sensor portion, the second sensor portion, and the connection portion are constituted of a multilayer body of a magnetic sensor element and a magnet. The magnet applies a bias magnetic field to the magnetic sensor element.

Magnetic sensor and method for manufacturing same

A magnetic detection device includes a first magnetic sensor, a second magnetic sensor, and a resin body. The first magnetic sensor includes a first sealing body and first terminals. The second magnetic sensor includes a second sealing body and second terminals. The resin body includes a resin-body main body, first wiring lines, and second wiring lines. Each of the first wiring lines includes a first overlapping portion overlapping with corresponding one of the first terminals. As viewed in a normal direction of each of the first terminals, the first overlapping portion is arranged at a position shifted from all of the second terminals and the second wiring lines. Each of the first wiring lines is welded to corresponding one of the first terminals at the first overlapping portion.

Magnetic detection device

The magnetic detection device includes: a first magnetic rotary body which rotates about a rotation shaft and has an outer circumferential portion which is a magnetic body; a second magnetic rotary body has an outer circumferential portion which is a magnetic body; a magnet which has a magnetization direction along the axial direction; a first magneto-resistive element provided on another side in the axial direction of the magnet; a second magneto-resistive element provided on one side in the axial direction of the magnet; a first magnetic guide provided between the magnet and the first magneto-resistive element; and a second magnetic guide provided between the magnet and the second magneto-resistive element, wherein the outer circumferential portion of the first magnetic rotary body and the outer circumferential portion of the second magnetic rotary body cause different magnetic fields between the magnet and the respective outer circumferential portions.

A semiconductor integrated circuit includes: a main circuit; a non-volatile memory; and a self-diagnosis circuit configured to execute, when the semiconductor integrated circuit is to be powered off, self-diagnosis processing in which the main circuit is diagnosed and a diagnosis execution record indicating whether the diagnosis is completed and a diagnosis result indicating a result of the diagnosis are stored in the non-volatile memory. The self-diagnosis circuit is configured to: determine, when the semiconductor integrated circuit is powered on, whether there is a failure in the main circuit by reading the diagnosis execution record and the diagnosis result out of the non-volatile memory; and shift a state of the main circuit to a safe state when determining that there is a failure in the main circuit, and instruct the main circuit to start normal operation when determining that there is no failure in the main circuit.

Semiconductor integrated circuit and rotation detection device

The invention provides a rotation sensor enabling simplification of manufacturing process, such as an inspection step, while maintaining measurement accuracy of the rotation sensor. Lead frames of a rotation sensor have positioning sections which contact a side surface section of a case and, in this state of contact, keep the insertion depth dimension of a magnetism detection unit in the internal space of the case to a prescribed dimension; a flange lower flat surface of a flange section is provided further towards the case bottom surface side than a flange lower flat surface of a ring-shaped rib, a portion of the outer peripheral section of the case and the ring-shaped rib are exposed in a ring shape from an exterior molding section, and the case is provided with a plurality of projections along the inner side surface of the case which constitutes the internal space.

Rotation sensor having ring-shaped rib

Included are an element having a magnetic tunnel junction structure configured such that an insulating layer is sandwiched between a pinned layer having a fixed magnetization direction and a free layer having a magnetization direction that varies freely, a magnet, and a rotating magnetic moving body having an irregular shape that induces change in the magnetic field. When, using the element as a reference, the magnetization direction of the pinned layer is set as an X axis direction, a direction perpendicular to the X axis direction and perpendicular to a plane of the pinned layer is set as a Z axis direction, and a direction perpendicular to an XZ plane constituted by the X axis direction and the Z axis direction is set as a Y axis direction, the magnetic moving body is disposed opposite the element in the Y axis direction via a gap relative to the element.

Magnetic detection apparatus with a tunnel magnetoresistive element

Provided is a comparator configured to compare input voltages, which are input to a first dynamic comparator and a second dynamic comparator, with a reference voltage, select either an output signal of the first dynamic comparator or an output signal of the second dynamic comparator based on the comparison result, output the selected output signal, and control clock signals, which are input to the first dynamic comparator and the second dynamic comparator respectively, based on the comparison result, so as to stop the operation of the dynamic comparator of which output signal is not selected.

Comparator, AD converter, semiconductor integrated circuit, and rotation detector

Provided is an AD converter having a rail-to-rail input voltage range and being free of a missing code and monotonicity loss. A comparator includes a first comparator having an NMOS differential input stage, a second comparator having a PMOS differential input stage, and an output selection circuit configured to select any one of outputs of the two comparators. A correction circuit acquires in advance a first AD converted value in the case of using the first comparator and a second AD converted value in the case of using the second comparator with respect to the same input voltage to calculate a correction value, and performs correction processing based on the correction value to suppress an offset error between the first AD converted value and the second AD converted value.

Ad converter, semiconductor integrated circuit, and rotation detector

A magnetic detection device has: a magnetic moving body which rotates about a rotating shaft and in which N-poles and S-poles are disposed alternately on an outer periphery thereof; magnetoresistive elements that are disposed at a spacing from the outer peripheral surface of the magnetic moving body; a signal processing unit that processes signals from the magnetoresistive elements; and a magnet that applies a bias magnetic field to the magnetoresistive elements. The magnetization direction of the magnet is parallel to the rotating shaft of the magnetic moving body. The magnetoresistive elements are disposed in a plane perpendicular to the magnetization direction of the magnet, and are disposed at a fixed spacing in the radial direction of the magnetic moving body.

Rotation of a magnetized rotor is detected in a highly accurate manner without depending on a magnetic pole pitch of N and S poles of the magnetized rotor. To that end, a magnetic detection device includes a magnetoresistive element that is formed of a fixed layer made of a ferromagnetic material whose magnetization direction is fixed and a free layer made of a ferromagnetic material whose magnetization direction can be freely changed, with a non-magnetic middle layer sandwiched between the layers, and arranged therein maintaining a gap between the element and the outer circumferential surface of the magnetized rotor in which the N and S poles are alternately arranged along the outer circumference rotating around a rotation shaft, wherein the magnetoresistive element is arranged in such a way that a plane on which the fixed layer is formed is in a plane including the rotation shaft.

Magnetic detection device and on-vehicle rotation detection device equipped with the same

A differential amplifier generates an offset correction signal based on a rotation detection signal from a rotation detector apparatus and an offset signal. A comparator compares the offset correction signal with a threshold voltage, and outputs a binarized signal representing the comparison result. An average value signal generator circuit generates an average value signal representing the average value of the offset correction signal. The offset signal generator circuit generates the offset signal so that the signal voltage of the average value signal has a voltage value between a threshold voltage and a threshold voltage.

Binarization circuit for binarizing detection signal representing rotation or movement of object

A magnetic detection apparatus includes a first comparison circuit that waveform-shapes the amplitude of a detection signal from magneto-electric transducers by DC coupling, a third comparison circuit that waveform-shapes the detection signal by AC coupling, an oscillation circuit having a natural frequency, a control circuit that counts the output of the first comparison circuit by using the oscillation means, and a selection circuit that selects the output of the first comparison means and the output of the second comparison means. The control circuit counts rising from the next rising or falling from the next falling of an output rectangular wave of the first comparison circuit, and provides output to the selection circuit at the time point at which the count value reaches a desired value. The selection circuit selects and outputs the output rectangular wave of the first comparison circuit or the third comparison circuit.

Magnetic detection apparatus

A magnetic detection device includes a signal processing circuit that detects a moving position and a moving direction of a magnetic mobile object using an output of a comparing circuit configured to output a signal by comparing an output signal of a magneto-electric transducer element with a threshold. A duration during which an output of the signal processing circuit is in a high level or in a low level is fixed to a period tor a period tdepending on the moving direction of the magnetic mobile object. When switching of the moving direction of the magnetic mobile object takes place within the period tor the period t, the signal processing circuit outputs a position signal same as a position signal indicating a position immediately before the switching of the moving direction of the magnetic mobile object due to hysteresis of the threshold of the comparing circuit.

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Tokyo, Japan

Hideki Shimauchi