Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Hideki Sekiguchi

Akira Yoshioka

Masaaki Onomura

Hung Hung

Hitoshi Kobayashi

Toru Sugiyama

Tetsuya Ohno

Yasuhiro Isobe

Koichi Takahashi

Yasuhiko Kuriyama

Noriaki Yoshikawa

Koichi Yoshimura

Atsuko Yamashita

Shunji Yoshitake

Shunji Kawano

Kenji Sato

Shoji Nakashima

Kazuhiro Takimoto

A semiconductor device includes a nitride semiconductor element, a first diode, and a second diode; the nitride semiconductor element includes a conductive mounting bed, a semiconductor substrate formed on the mounting bed, a first nitride semiconductor layer, a second nitride semiconductor layer, a first major electrode, a second major electrode, a first gate electrode, and a second gate electrode; the first diode includes a first anode electrode electrically connected to the mounting bed, and a first cathode electrode electrically connected to the first major electrode; and the second diode includes a second anode electrode electrically connected to the mounting bed, and a second cathode electrode electrically connected to the second major electrode.

Semiconductor device

A semiconductor device includes a first transistor, a first drive circuit including a second transistor, and a second drive circuit including a third transistor. The second transistor and the third transistor are connected in series; and a connection node of the second and third transistors is connected to a gate electrode of the first transistor. The first transistor, the second transistor, and the third transistor are normally-off MOS HEMTs formed in a first substrate that includes GaN. The first drive circuit charges a parasitic capacitance of the first transistor. The second drive circuit discharges the parasitic capacitance of the first transistor.

A semiconductor device includes: a drain electrode including a plurality of drain finger parts; a source electrode including a plurality of source finger parts and a Kelvin source part electrically connected with the source finger parts; a sense electrode positioned between a drain finger part and the Kelvin source part, which are next to each other in a particular direction; and a gate electrode positioned between a drain finger part and a source finger part, which are next to each other in the particular direction, and between a drain finger part and the sense electrode, which are next to each other in the particular direction. The sense electrode and the Kelvin source part are electrically connected via a sense resistance due to a spacing between the sense electrode and the Kelvin source part in the particular direction.

A semiconductor device includes: a first electrode; a second electrode; a semiconductor region forming region between the first electrode and the second electrode; a first insulating film between the semiconductor region forming region and the second electrode; an actuation gate electrode in the semiconductor region forming region via a second insulating film; a dummy gate electrode, at a distance from the actuation gate electrode, on each of both sides of the actuation gate electrode in the semiconductor region forming region via a third insulating film; a trench contact, in a manner facing the actuation gate electrode, at a position in the third insulating film and between the dummy gate electrode and the semiconductor region forming region; and a contact electrode in the first insulating film and configured to electrically connect the trench contact to the second electrode.

A semiconductor light emitting device is disclosed in which a semiconductor multilayer structure including a light emitting layer is formed on a substrate and light is output from the opposite surface of the semiconductor multilayer structure from the substrate. The light output surface is formed with a large number of protrusions in the form of cones or pyramids. To increase the light output efficiency, the angle between the side of each protrusion and the light output surface is set to between 30 and 70 degrees.

Surface-emitting semiconductor light device

A feed water heater has a longitudinally cylindrical body comprising a cylindrical shell portion constituting a main body portion of a feed water heater and a water box-shaped chamber operatively connected to the cylindrical shell portion and partitioned by a tubesheet. In the cylindrical shell portion, a heat exchanger tube bank is arranged and supported by a plurality of support plates, a drain cooling section is disposed in association with the heat exchanger tube bank for carrying out a heat recovery of a drain generated in the heat exchanger tube bank, a dilution condensing chamber is provided for the heat exchanger tube bank and adapted to excessively flow the steam into the heat exchanger tube bank, and a non-condensable gas chamber is provided for the heat exchanger tube bank. The drain cooling section, the dilution condensing chamber and the non-condensable gas chamber are arranged axially in this order in the cylindrical shell from the tube sheet.

Growing community of inventors

Yokohama Kanagawa, Japan

Hideki Sekiguchi