Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Other

Hideki Naruoka

Toshiaki Iwamatsu

Yasuo Yamaguchi

Nobuyoshi Hattori

Yuuichi Hirano

Yasuhiro Kimura

Yoshiko Yoshida

Takashi Ipposhi

Takuji Matsumoto

Shigeto Maegawa

Hidekazu Yamamoto

Masaru Takamatsu

Takashi Katakura

A semiconductor device includes a semiconductor layer, a plurality of semiconductor elements formed on the semiconductor layer, and an isolation film provided in a surface of the semiconductor layer, semiconductor elements being electrically isolated from each other by the isolation film. The semiconductor device also includes a PN junction portion provided under the isolation film and formed by two semiconductor regions of different conductivity types in the semiconductor layer. The isolation film includes a nitride film provided in a position corresponding to a top of the PN junction portion and has a substantially uniform thickness across the two semiconductor regions and an upper oxide film and a lower oxide film which are provided in upper and lower portions of the nitride film. The surface of the semiconductor layer is silicidized in such a state that a surface of the isolation film is exposed.

Semiconductor device and method of manufacturing the same

A semiconductor substrate that prevents formation of particles from an edge part of the substrate. The substrate contains an on-substrate oxide film and an SOI layer stacked on the oxide film. A molten layer is formed on the edge part of the on-substrate oxide film and the SOI layer by mixing the SOI layer and the on-substrate oxide film to cover the edge part. An epitaxial layer may also be formed on the edge part of the on-substrate oxide film and the SOI layer to cover the edge part.

Semiconductor substrate with stacked oxide and SOI layers with a molten or epitaxial layer formed on an edge of the stacked layers

A boat () has a recess () for supporting a laminated wafer (). The recess () has a first side surface (), a first bottom surface (), a second side surface (), a second bottom surface () and a third side surface (). Viewing from an upper surface of the boat (), the second bottom surface () is located in a position lower than the first bottom surface (). The laminated wafer () is mounted on the boat () in the state that a side surface of a first silicon wafer () is not in contact with the second bottom surface () of the recess () and a side surface of a second silicon wafer () is in contact with the first bottom surface () of the recess (). A second main surface () of the second silicon wafer () is in contact with the first side surface () of the recess () and a second main surface () of the first silicon wafer () is in contact with the third side surface () of the recess ().

Method of manufacturing SOI wafer

In order to obtain a method of evaluating a crystal defect which allows crystal defects generated in a thin film SOI layer or a thin film surface layer to be evaluated using an in-line test, an SOI layer has silicide regions formed in the evaluation region consequently upon generation of crystal defects generated in the SOI layer . The silicide regions are regions silicided as a result of the crystal defects having gettered metals which are contained in a transition layer and diffuse into the SOI layer upon a heat treatment. A laser beam is irradiated to the evaluation region via the transition layer and the silicon oxide film . By monitoring a current flowing between first and second probes using an ampere meter while scanning the evaluation region with a laser beam, it is possible to evaluate the crystal defects in the evaluation region.

Method of manufacturing semiconductor device for evaluation capable of evaluating crystal defect using in-line test by avoiding using preferential etching process

A semiconductor device that prevents metal pollution and a method of manufacturing the semiconductor device. A region (NR) and a region (PR) are defined by a trench isolation oxide film, a polysilicon film selectively provided on the trench isolation oxide film, a silicon layer provided on the polysilicon film, and a side wall spacer provided on a side surface of the polysilicon film. The polysilicon film is provided in a position corresponding to a top of a PN junction portion JP of a P-type well region and an N-type well region in a SOI layer across the two well regions.

Semiconductor device

An object is to provide a semiconductor substrate processing method and a semiconductor substrate that prevent formation of particles from the edge part of the substrate. Silicon ions are implanted into the edge part of an SOI substrate ( ) in the direction of radiuses of the SOI substrate ( ) to bring a buried oxide film ( ) in the edge part of the SOI substrate ( ) into a silicon-rich state. Thus an SOI substrate ( ) is provided, where the buried oxide film ( ) has substantially been eliminated in the edge part.

Semiconductor substrate processing method

A manufacturing method of a SOI substrate ( ) comprises the steps of: forming an oxide film ( ) at cross-sectional both main surfaces and cross-sectional both end surfaces of a silicon substrate ( ); forming a resist layer ( ) on the oxide film ( ) at cross-sectional both end surfaces of the substrate ( ); and removing the oxide film ( ) at those portions which are left from the covering of the resist layer ( ), to thereby expose the both main surfaces of the substrate ( ). Next, the resist layer ( ) is removed to thereby leave the oxide film ( ) at the both end surfaces of the substrate ( ); and oxygen ions (I) are dosed into the substrate ( ) from one of the exposed both main surfaces, followed by an anneal processing to thereby form an oxide layer (14) in a region at a predetermined depth from the one main surface of the substrate ( ). The oxide film ( ) left on the both end surfaces of the substrate ( ) is then removed.

SOI substrate, method of manufacture thereof, and semiconductor device using SOI substrate

An SOI substrate having a silicon layer formed on an embedded oxide layer is prepared at a step ST,. An exposed surface of the silicon layer is thermally oxidized for forming a thermal oxide film at a step ST,. The thermal oxide film, enclosing a defect in the silicon layer, is formed in a shape on or to which the defect is reflected or transferred. At this time, thermal oxidation is so executed that the transferred part of the thermal oxide film is in contact with the embedded oxide layer. The SOI substrate is dipped in a hydrofluoric acid solution at a step ST,. Thus, the thermal oxide film is removed while the embedded oxide layer is eroded through the part in contact with the thermal oxide film. According to this inspection method ST,, the defect is reliably transferred to the embedded oxide layer through the thermal oxidation step ST,, whereby it is possible to evaluate an inner defect undetectable/unevaluative by a conventional inspection method. Thus, the defect of the silicon layer is inspected/evaluated for obtaining an SOI substrate of high quality and improving the manufacturing yield of a semiconductor device.

Method of inspecting semiconductor substrate

A semiconductor device and a semiconductor storage device having an SOI structure and being enable sufficient gettering performance without imposing limitations on the freedom of design of an LSI circuit. A semiconductor device includes a semiconductor wafer of SOI structure which has a insulation layer and a silicon layer provided thereon, wherein the semiconductor wafer includes a plurality of element fabrication regions where semiconductor elements are fabricated, and a cutting region provided between the element fabrication regions. Gettering sites are formed in the cutting region by means of embedding a gettering member into grooves of predetermined depth.

Semiconductor device and semiconductor storage device

An object is to provide a semiconductor substrate processing method and a semiconductor substrate that prevent formation of particles from the edge part of the substrate. Silicon ions are implanted into the edge part of an SOI substrate (,) in the direction of radiuses of the SOI substrate (,) to bring a buried oxide film (,) in the edge part of the SOI substrate (,) into a silicon-rich state. Thus an SOI substrate (,) is provided, where the buried oxide film (,) has substantially been eliminated in the edge part.

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Tokyo, Japan

Hideki Naruoka