Sony Semiconductor Solutions Corporation

Hideki Naganuma

Mamoru Sato

Takuya Toyofuku

To improve the image quality in a solid-state imaging element that performs differential amplification. Each of a plurality of reference pixels is provided with a reference-side amplifier transistor that supplies a reference current according to a predetermined reference potential. Each of a plurality of readout pixel circuits is provided with a readout-side amplifier transistor that supplies from a drain to a source a signal current according to a difference between a potential of a gate and the reference potential. Further, in a potential difference generation unit, a plurality of source follower transistors are arranged for each of columns of the readout pixel circuits, each source follower transistor controlling a potential difference between the gate and the drain to a predetermined value when the potential of the gate and the reference potential are initialized.

Solid-state imaging element

To improve an image quality in a solid-state imaging element that performs differential amplification. A reference-side amplification transistor supplies a reference current corresponding to a predetermined reference potential. A read-side amplification transistor supplies a signal current corresponding to a difference between a potential of a gate and the reference potential from a drain to a source. A pair of reset transistors initializes the potential of the gate and the reference potential. A potential control circuit controls a potential difference between the gate and the drain to a predetermined value when the potential of the gate and the reference potential are initialized.

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KANAGAWA, Japan

Hideki Naganuma