Murata Manufacturing Co., Ltd.

Murata Manufacturingco., Ltd.

Hideki Muto

Takanori Uejima

Koji Furutani

Norio Nakajima

Koji Tanaka

Takahiro Watanabe

Yusuke Naniwa

Takashi Watanabe

Yukiya Yamaguchi

Morio Takeuchi

Masanori Kato

Mitsuhide Kato

Hiroshi Nishikawa

Akiko Itabashi

Shun Harada

Isolation between the first path and second path is increased. A radio frequency module includes a first inductor, a second inductor, a third inductor, and a switch. The first inductor is provided in a first path through which a first communication signal travels. The second inductor is provided in a second path through which a second communication signal travels, the second path being used simultaneously with the first path. The third inductor is provided in a third path through which a third communication signal travels, the third path not being used simultaneously with the first path. The switch is provided between ground and a node in the third path and is connected to the third inductor. The third inductor is arranged between the first inductor and the second inductor.

Radio frequency module and communication device

A radio frequency circuit includes a substrate, a first terminal disposed on a first principal surface of the substrate, a second terminal disposed on the first principal surface, a first-surface mounted component disposed on the first principal surface or inside the substrate, and a second-surface mounted component disposed on a second principal surface of the substrate which is opposite the first principal surface. A radio-frequency signal, which is input to the first terminal, is transmitted, for output from the second terminal, so as to make at least one round trip between the first principal surface and the second-surface mounted component, which is disposed on the second principal surface, through wiring lines disposed in the substrate.

Radio frequency circuit and communication apparatus

A radio-frequency module includes: a module substrate having first and second main surfaces; a semiconductor IC having third and fourth main surfaces and mounted on the first main surface with the third main surface between the module substrate and the fourth main surface; and first and second electrodes extending perpendicularly to the first main surface. The cross-sectional area of the second electrodes is smaller than the cross-sectional area of the first electrodes. The semiconductor IC viewed in plan has first and second sides parallel to each other and third and fourth sides parallel to each other. The first electrodes are distributed over a first region between the first side and a side facing the first side and a second region between the second side and a side facing the second side. The second electrodes are in a third region between the third side and a side facing the third side.

Radio-frequency module and communication device

A high-frequency module includes a plurality of filters, a switch that commonly connects a plurality of paths, and a low noise amplifier that amplifies a high-frequency signal input from the plurality of filters with the switch interposed therebetween, wherein paths in which first and second filters are respectively provided among the plurality of paths connect the respective filters and the switch without connecting impedance elements, and each of the first and second filters has an output impedance located in a matching region between a NF matching impedance at which an NF of the low noise amplifier is minimum and a gain matching impedance at which a gain of the low noise amplifier is maximum in its respective pass band thereof on a Smith chart.

High-frequency module and communication apparatus

An RF module includes a switch IC on a surface of a module substrate and a passive circuit provided in and/or on the module substrate. The switch IC includes a high-frequency circuit on an IC substrate and a digital control circuit. In a plan view of the IC substrate, the digital control circuit is surrounded by the high-frequency circuit. The high-frequency circuit includes analog ground electrodes in a boundary portion with the digital control circuit in the high-frequency circuit to surround the digital control circuit in the plan view.

Switch IC, high-frequency module, and communication apparatus

A semiconductor device includes a base, a first switching unit disposed on the base, the first switching unit having a substantially rectangular shape and including plural first switches, and an amplifier unit disposed on the base, the amplifier unit including plural amplifier circuits to which a radio-frequency signal is inputted after passing through the first switching unit. In plan view of the base, the first switching unit has four edges including a first edge, a second edge orthogonal to the first edge, and a third edge parallel to the first edge and orthogonal to the second edge, the amplifier unit includes a first region extending along the first edge, a second region extending along the second region, and a third region extending along the third edge, and at least one of the plural amplifier circuits is disposed in each of the first region, the second region, and the third region.

Semiconductor device, radio-frequency circuit, and communication apparatus

A radio frequency module includes a first receive circuit that processes a receive signal in the first frequency band. The first receive circuit includes a first substrate, a first low noise amplifier, and a first filter circuit. The first low noise amplifier is mounted on a principal surface of the first substrate. The first filter circuit is connected to an output end of the first low noise amplifier. At least a portion of the first filter circuit is provided on the principal surface of the first substrate. The first filter circuit attenuates spurious components occurring due to a transmit signal in the first frequency band received by the first low noise amplifier. The spurious components are included in the transmit signal in the first frequency band and have a frequency bandwidth that overlaps, includes, or is included in the frequency bandwidth of the receive signal in the second frequency band.

A high-frequency module () includes a reception-side filter () that uses a first frequency band as a pass band and a second frequency band as an attenuation band, an LNA (), and a matching circuit () disposed between the reception-side filter () and the LNA (). In a Smith chart, the matching circuit () makes an interval between impedance in the second frequency band of the reception-side filter () and a second gain circle center point indicating impedance at which gain in the second frequency band of the LNA () is maximized greater than an interval between impedance in the first frequency band of the reception-side filter () and a first gain circle center point indicating impedance at which gain in the first frequency band of the LNA () is maximized.

High-frequency module, transmission-reception module, and communication apparatus

In a high-frequency module, a phase and amplitude of a high-frequency signal from a connection conductor between filter devices change due to the signal being transmitted by a takeout circuit unit. When the high-frequency signal at a third external connection terminal is a suppression signal and a high-frequency signal passing through the first filter circuit is a suppression-target signal, the transmission distance in the takeout circuit unit is such that the phase of the suppression signal is approximately inverted with respect to the phase of the suppression-target signal and the suppression signal has approximately the same amplitude as the suppression-target signal. The suppression signal is mixed with the suppression-target signal and components outside of the pass band are cancelled out and the attenuation characteristics of the filter circuit are enhanced.

High-frequency module

A high-frequency module includes a connection line that interconnects a first SAW resonator and a second SAW resonator, and is connected to a second shunt connection terminal through a third SAW resonator. A connection line interconnecting a fourth SAW resonator and a second series connection terminal is connected to the second shunt connection terminal through a fifth SAW resonator. The second shunt connection terminal is connected to a ground through an inductor. A matching circuit is connected between a first series connection terminal and a first external connection terminal. The matching circuit is inductively or capacitively coupled to the inductor.

A high frequency module includes a multilayer substrate, a power amplifier, thermal vias, and a bandpass filter. The power amplifier is mounted on the multilayer substrate. The thermal vias are provided in the multilayer substrate directly below the power amplifier and configured to dissipate heat of the power amplifier. The bandpass filter is provided in the multilayer substrate and connected to the power amplifier. The thermal via defines an inductor included in the bandpass filter. The bandpass filter overlaps the power amplifier when viewed in a lamination direction of the multilayer substrate.

High frequency module

The invention provides a composite high frequency component constituting a part of a microwave circuit having plural signal paths corresponding to their respective frequencies, comprising: a diplexer for coupling transmitting signals from the plural signal paths for transmission and distributing receiving signals into said plural signal paths for reception; plural high frequency switches for separating the plural signal paths into a transmission section and a reception section, respectively; plural filters introduced in the signal paths; said diplexer, said high frequency switch, and said filters being integrated into a ceramic multi-layer substrate formed by lamination of plural ceramic sheet layers. According to the above described composite high frequency component, the diplexer, the high frequency switches, and the filters which constitute the composite high frequency component are integrated into the ceramic multi-layer substrate formed by lamination of plural ceramic sheet layers. Thus, the matching and adjustment between the diplexer and the high frequency switches can be easily performed. It is unnecessary to provide a matching circuit for matching and adjusting the diplexer and the high frequency switches, and moreover, the high frequency switches and the filters.

Composite high frequency component and mobile communication device including the same

A high frequency switching component for being connected to a transmission circuit, a reception circuit, and an antenna to be used for switching to either a state in which the transmission circuit is connected to the antenna, or a state in which the reception circuit is connected to the antenna, comprising: a multilayer circuit board, on which there is formed a circuit including: a transmission circuit terminal to be connected to the transmission circuit; a reception circuit terminal to be connected to the reception circuit; an antenna terminal to be connected to be the antenna; a ground terminal; a first diode whose anode is connected to the transmission circuit terminal and the cathode thereof is connected to the antenna terminal; a second diode whose anode is connected to the reception circuit terminal and the cathode thereof is connected to the ground terminal; a signal line for connecting the transmission circuit terminal, the reception circuit terminal, and the antenna terminal via the first diode; and an inductor or an LC filter disposed between the signal line and the ground terminal to reduce noise on the signal line; in which the transmission circuit terminal, the reception circuit terminal, the antenna terminal, the ground terminal, the first diode, and the second diode are disposed on a surface of the multilayer circuit board; at least a part of the signal line being disposed inside the multilayer circuit board; and the inductor being disposed either inside or on the surface of the multilayer circuit board.

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Nagaokakyo, Japan

Hideki Muto