Panasonic Intellectual Property Management Co., Ltd.

Nuvoton Technology Corporation Japan

Panasonic Semiconductor Solutions Co., Ltd.

Hideki Mizuhara

Yoshihiro Matsushima

Shinichi Oohashi

Hiroshi Yoshida

Mitsuaki Sakamoto

Chie Fujioka

Masao Hamasaki

A semiconductor device includes: a semiconductor layer that includes principal surfaces; a metal layer that includes principal surfaces, is disposed with the principal surface in contact with the principal surface, is thicker than the semiconductor layer, and comprises a first metal material; a metal layer that includes principal surfaces, is disposed with the principal surface in contact with the principal surface, and comprises a metal material having a Young's modulus greater than that of the first metal material; and transistors. The transistor includes a source electrode and a gate electrode on a side facing the principal surface. The transistor includes a source electrode and a gate electrode on a side facing the principal surface.

Semiconductor device

In a semiconductor element having a compound semiconductor layer epitaxially grown on a silicon substrate, an object is to suppress generation of deficiency or problems of reliability deriving from the ends of the element that are generated when dividing into semiconductor devices by dicing. A compound semiconductor layer epitaxially grown on a silicon substrate is formed via a buffer layer made of aluminum nitride. In the periphery of the semiconductor device, a scribe lane is present to surround a semiconductor element region. Along the scribe lane, the aluminum nitride layer is covered with a coating film for protection against humidity and moisture.

Compound semiconductor device, method for producing same, and resin-sealed type semiconductor device

Growing community of inventors

Kyoto, Japan

Hideki Mizuhara