Keio University

Hideki Miyajima

Eiji Saitoh

Kazuya Harii

Makoto Kawabata

The invention relates to a magneto-resistance effect element and a magnetic memory device. Lowering the magnetic domain wall movement current and drive at room temperature in a current induction single magnetic domain wall movement phenomenon are achieved. A magneto-resistance effect element is formed by including at least: a magnet wirefor forming magnetic domain wall potentialbinding a single magnetic domain wall; a magnetic field applying means for generating a magnetic field for introducing the single magnetic domain wallinto the magnet wire; and a drive current applying means for applying the currentincluding a resonance frequency component determined on the basis of the magnetic domain wall potential

Magneto-resistance effect element and magnetic memory device

The present invention relates to a magnetic ring unit and a magnetic memory device; an object of the invention is to control the direction of rotation of the magnetic flux freely and with high reproducibility in a simple structure without using a thermal process such as pinning; and a magnetic ring unit is formed of a magnetic ring in eccentric ring form where the center of the inner diameter is located at a decentered position relative to the center of the outer diameter.

Growing community of inventors

Kanagawa, Japan

Hideki Miyajima