Other

Anelva Corporation

Nec Corporation

Shin-Etsu Chemical Co., Ltd.

Mitsui Chemicals, Inc.

Tokyo Ohka Kogyo Co., Ltd.

Japan Advanced Institute of Science and Technology

Ishikawa Seisakusho, Ltd.

Hideki Matsumra

Hideki Matsumura

Atsushi Masuda

Akira Izumi

Yasunobu Nashimoto

Yosuke Miyoshi

Shuji Nomura

Kazuo Sakurai

Shouichi Aoshima

Masahiko Tanaka

Keiji Ishibashi

Minoru Karasawa

Masatoshi Takahashi

Hiroshi Ikeda

Hiroyuki Ohtsuka

Hironobu Umemoto

Shigehira Minami

Kazuhisa Takao

Hideki Sunayama

Kimihiko Saitoh

Kenichiro Kida

Kazutaka Yamada

A solar cell () comprising a semiconductor solar cell substrate () having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate () is coated with a light receiving surface side insulating film () composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film () is a low hydrogen content inorganic insulating film containing less than 10 atm % of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.

Solar cell and method of fabricating the same

An end point detection method in the case where a catalyst arranged in a treatment chamber of a gas phase reaction processing apparatus is heated at high temperature by supplying electric power thereto and the treatment is carried out by cracking a reaction gas by the catalyst heated at high temperature, comprises the steps of supplying the electric power to the catalyst from a constant current source, detecting electric potential difference between both ends of the catalyst, performing primary differentiation of the detected electric potential difference, and determining an end point of the treatment based on obtained primary differential value.

End point detection method, end point detection device, and gas phase reaction processing apparatus equipped with end point detection device

There is provided a method for selectively transferring pixel control devices onto a planar display substrate, which method enables prepared pixel control devices to be easily, reliably and inexpensively mounted without inducing any loss of pixel control devices. The pixel control devices () are formed in a large number at pitches () obtained respectively by dividing pitches () on the planar display substrate () by natural numbers. The pixel control devices corresponding to the number of the pitches () on the planar display substrate () are picked up, retained on a transparent thermoplastic resin film () formed on the planar display substrate () utilizing the plastic deformation of the film and fixed at the peripheries thereof with a transparent ultraviolet curing resin film ().

Pixel control element selection transfer method, pixel control device mounting device used for pixel control element selection transfer method, wiring formation method after pixel control element transfer, and planar display substrate

A heating element CVD system wherein one or a plurality of connection terminal holders is placed in the processing container, and each of the connection terminal holders holds a plurality of connection terminals. Each of the connection terminals connects the heating element to the electric power supply mechanism electrically such that a connection region of the heating element connected to the connection terminal is not exposed to a space in the processing container.

Heating element CVD system and connection structure between heating element and electric power supply mechanism in the heating element CVD system

This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 10 eV cm or less, which is brought by the above pre-treatment in the insulator film deposition process.

Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junction

A semiconductor thin film including a well layer is laminated on a semiconductor substrate, the semiconductor substrate and the semiconductor thin film is cleaved, and a cleavage plane of the semiconductor substrate and the semiconductor thin film, which is obtained by the cleaving, is exposed to an atmosphere produced by decomposition of a gas containing N-atoms under the presence of a heated catalytic substance, thereby a surface layer of the cleavage plane is removed and a nitride layer is formed on the surface. Subsequently, a dielectric film is formed on the cleavage plane. According to the above technique, a natural oxide film formed on the cleavage plane can be removed and also a protective film can be formed by using a catalytic CVD apparatus.

Method for manufacturing semiconductor laser device

A heating element CVD device capable of providing a high productivity and decomposing and/or activating the material gas led into a processing container by a heating element and stacking film on a substrate disposed in the processing container, wherein the connection part area of the heating element to a connection terminal for connecting the hearing element to a power supply mechanism is not exposed to a space inside the processing container, specifically, the connection part area is covered by a cylindrical body or a platy body covering the connection part area while providing a space part thereof from the hearing element, or the connection part area allows the space part to be present in a space thereof from the connection terminal and is covered by the cylindrical body or platy body covering the connection part area while providing the space part in a space thereof from the heating element, and hydrogen gas is led from the connection terminal side into the processing container through the space part, whereby the portion of the heating element near the connection part to the power supply mechanism can be prevented from being deteriorated by the material gas, the material gas can be prevented from reacting with cleaning gas during the cleaning for removing the film adhered to the inside of the processing container, the service life of the heating element can be increased, and a film forming environment can be stabilized.

Heating element CVD system

This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 10.sup.12 eV .sup.-1 cm.sup.-2 or less, which is brought by the above pre-treatment in the insulator film deposition process.

Method for depositing a thin film

Growing community of inventors

Kanazawa, Japan

Hideki Matsumura