Semiconductor Energy Laboratory Co., Ltd.

Hideki Matsukura

Kunio Hosoya

Takashi Shingu

Two dual-gate transistors, which are electrically connected in parallel and provided in a compact design, are disclosed.

Semiconductor device

Semiconductor device including semiconductor layer and conductive layer

An area occupied by a circuit element having at least a capacitor and a transistor is reduced in a semiconductor device. In a semiconductor device including a first transistor, a second transistor, and a capacitor, the first transistor and the capacitor are provided over the second transistor. Then, a common electrode, which serves as one of a source and a drain of the first transistor and one electrode of the capacitor, is provided. In addition, the other electrode of the capacitor is provided over the common electrode.

A semiconductor device includes a first conductive layer, a first insulating layer over the first conductive layer, first and second oxide semiconductor layers over the first insulating layer, a second conductive layer over the first oxide semiconductor layer, a third conductive layer over the second oxide semiconductor layer, a fourth conductive layer over the first oxide semiconductor layer and the second oxide semiconductor layer, a second insulating layer over the second conductive layer, the third conductive layer, and the fourth conductive layer, a fifth conductive layer electrically connected to the first conductive layer over the second insulating layer, and a sixth conductive layer over the second insulating layer. Each of the first and fifth conductive layers includes an area overlapping with the first oxide semiconductor layer. The sixth conductive layer includes an area overlapping with the second oxide semiconductor layer.

Semiconductor device having an effective use of the conductive layer formed in the same process as one electrode

An object is to solve a problem in that, in a light-emitting device including a plurality of units including a light-emitting element group connected in series, when disconnection is caused, a current does not flow to the whole of the unit and the whole of the unit is in a non-light emitting state. A light-emitting device has a circuit in which a plurality of units each including a light-emitting element group connected in series using a connection wiring group is provided and the plurality of units is connected in parallel. Further, the circuit includes a subsidiary wiring for electrically connecting one of the connection wirings included in one of the units and one of the connection wirings included in another of the units, whereby a countermeasure against disconnection can be taken.

Light-emitting device

A lighting device having a novel structure for integration of a plurality of light-emitting elements, and a manufacturing method thereof are provided. In the lighting device, a plurality of light-emitting elements is electrically connected to each other through plugs (connecting members) and a connection wiring for integration. The connection wiring is provided on a counter substrate and the plugs are provided over an element substrate or for the counter substrate. Such a connection structure enables an appropriate electrical connection between the plurality of light-emitting elements in the lighting device.

Lighting device

A semiconductor device includes first and second conductive layers over an insulating surface, a first insulating layer over the first and second conductive layers, first and second oxide semiconductor layers over the first insulating layer, third and fourth conductive layers over the first oxide semiconductor layer, a second insulating layer over the third and fourth conductive layers, and a fifth conductive layer over the second insulating layer. In the semiconductor device, the third conductive layer is electrically connected to the second conductive layer, the fifth conductive layer is electrically connected to the fourth conductive layer, the first oxide semiconductor layer has a region overlapping with the first conductive layer, the second oxide semiconductor layer has a region overlapping with the fifth conductive layer, and the second oxide semiconductor layer has a region intersecting with the second conductive layer.

A light-emitting device which includes a semiconductor layer; a first insulating layer over the semiconductor layer; a gate electrode and a first conductive layer over the first insulating layer; a second insulating layer over the gate electrode and the first conductive layer; source and drain electrodes and a second conductive layer over the second insulating layer; a third insulating layer over the source and drain electrodes and the second conductive layer; a first electrode and a third conductive layer over the third insulating layer; a planarization film covering an end portion of the first electrode; an electroluminescent layer over the first electrode; and a second electrode over the electroluminescent layer and the planarization film is provided. The second electrode is electrically connected to the third conductive layer through an opening portion provided in the planarization film. The opening portion overlaps with the first, second, and third conductive layers.

Light-emitting device, display device, and semiconductor device

A structure with which luminance of light extracted outside is improved in the case where a color filter is used is disclosed below. In an optical device including an optical element and a color conversion unit which light radiated from the optical element (light emitted from the optical element or light passing through the optical element) enters, the color conversion unit has a color filter region in which a color filter layer is provided and a transmissive region having higher transmittance per unit area than the color filter region.

Optical device, display device, and lighting device

Deterioration of the whole electroluminescence layer which is caused by moisture penetration through the electroluminescence layer because of a pinhole in an electrode is prevented. A plurality of island-shaped electroluminescence layers are provided. That is, an electroluminescence layer is divided into plural layers. In addition, the plurality of island-shaped electroluminescence layers are interposed between a pair of common electrodes. Accordingly, even when moisture penetrates into one of the island-shaped electroluminescence layers, moisture does not penetrate into another of the island-shaped electroluminescence layers.

Light source and device having the same

It is an object to provide an element structure of a semiconductor device for having a sufficient contact area between an electrode in contact with a source region or a drain region and the source region or the drain region, and a method for manufacturing the semiconductor device with the element structure. An upper electrode is formed over a high-concentration impurity region (the source region or the drain region). A contact hole passing through an interlayer insulating film is formed overlapping with a region where the upper electrode and the high-concentration impurity region are stacked.

Semiconductor device and manufacturing method thereof

Deterioration of the whole electroluminescence layer which is caused by moisture penetration through the electroluminescence layer because of a pinhole in an electrode is prevented. A plurality of island-shaped electroluminescence layers is provided. That is, an electroluminescence layer is divided into plural layers. In addition, the plurality of island-shaped electroluminescence layers is interposed between a pair of common electrodes. Accordingly, even when moisture penetrates through one of the island-shaped electroluminescence layers, moisture does not penetrate through another of the island-shaped electroluminescence layers.

Light source and device using electroluminescence element

An object is to provide an element structure of a semiconductor device for increasing an etching margin for various etching steps and a method for manufacturing the semiconductor device having the element structure. An island-shaped semiconductor layer is provided over an insulator having openings. The island-shaped semiconductor layer includes embedded semiconductor layers and a thin film semiconductor layer. The embedded semiconductor layers have a larger thickness than that of the thin film semiconductor layer.

Growing community of inventors

Kanagawa, Japan

Hideki Matsukura