Japan Display Inc.

Hitachi, Ltd.

Eagle Industry Co., Ltd.

Hideki Kuriyama

Toshimasa Ishigaki

Fumio Takahashi

Mitsuo Nakatani

Keiichiro Ashizawa

Takeshi Tanaka

Hirotaka Imayama

Masahiko Suzuki

Tetsuya Endo

Kunihiko Watanabe

Keiichirou Ashizawa

Yuuichi Hashimoto

Masahiro Ukisu

Tomoyuki Ariyoshi

The invention provides a metal bellows type accumulator having an outer shell provided in its one end with a pressure introducing passage in an opening manner, and a metal bellows repeatedly formed peak portions directed to an outer side in a radial direction and trough portions directed to an inner side, capable of expanding and contracting in an axial direction and separating an inner chamber of the outer shell into a pressure introducing chamber communicated with the pressure introducing passage and a gas chamber charged with cushion gas. A tubular portion is provided at a position where an amplitude of vibration in a radial direction becomes maximum in the metal bellows, has a greater diameter than a maximum diameter portion of each of the peak portions and is in contactable with an inner peripheral surface of the outer shell at a predetermined width in the axial direction.

Metal bellows type accumulator

A manufacturing method of a display device having an array substrate includes the steps of forming a projection of an organic material in a pixel on the array substrate by patterning a photosensitive material or by inkjet, forming a TFT on the array substrate, wherein a source electrode of the TFT is formed to extend on at least part of the upper surface of the projection, forming an inorganic passivation layer over the TFT and over at least part of the upper surface of the projection, forming an organic passivation layer over the inorganic passivation layer, forming an upper insulating layer over at least part of the organic passivation layer, forming a contact hole in the inorganic passivation layer and the upper insulation layer over the upper surface of the projection, and forming a pixel electrode on the upper insulation layer which contacts the source electrode.

Semiconductor device

Screen brightness is improved in an IPS type liquid crystal display device. A common electrode having a slit is disposed over a rectangular pixel electrode with an insulating film attached therebetween. The slit has a linear part and a bend part. The bend part is necessary for preventing pressing domain. The transmittance in the bend part is increased by making the thickness of the insulating film below the bend part of the slit to less than the thickness of the insulating film at the linear part of the slit, thereby increasing the transmittance of the entire pixel. Thus, the screen brightness can be improved.

Liquid crystal display device

Display device

In order to improve the transmissivity of each pixel and the brightness of a high-definition screen, a TFT and a projection are disposed in each pixel, a source electrode of the TFT extends so as to cover the projection, an inorganic passivation film is formed over the TFT and the projection, an organic passivation film is formed on the inorganic passivation film on the TFT, an opposed electrode is formed on the organic passivation film, an upper insulation film is formed over the opposed electrode, a pixel electrode is formed on the upper insulation film, and the pixel electrode is connected to the source electrode through a connection hole formed in the inorganic passivation film and the upper insulation film on the projection. Accordingly, the diameter of a through-hole can be made smaller.

Display device having projection with connection hole above the projection enabling connection of source electrode and pixel

A liquid crystal display device is provided with a pair of substrates which are arranged to face each other in an opposed manner and a liquid crystal layer which is sandwiched between main surfaces of a pair of substrates. On the main surface of one of the pair of substrates which faces the liquid crystal layer, pixel regions including switching elements, pixel electrodes which are connected to the switching elements and a protective film which is disposed at liquid crystal layer side of the switching elements are formed. In such a liquid crystal device, the protective film is formed by laminating the plurality of material layers which include at least a first material layer and a second material layer which is arranged closer to the liquid crystal layer side than the first material layer. Further, the second material layer exhibits resistivity which is lower than resistivity of the first material layer and higher than resistivity of silicon or semiconductor layers which constitute channels of the switching elements. Due to such a constitution, the image retention which is generated on a display screen of the liquid crystal display device can be reduced.

Liquid crystal display device and manufacturing method thereof

In a liquid crystal display device having a thin film transistor in a pixel region thereof, the present invention arranges a semiconductor layer being located under a source electrode in the thin film transistor within a contour of a gate line (or a gate electrode of the thin film transistor) so as to suppress a photo conductive current in the semiconductor layer, or to prevent the source electrode from being broken at a position where the source electrode gets over the semiconductor layer.

Growing community of inventors

Mobara, Japan

Hideki Kuriyama