Nippon Mining & Metals Co., Ltd.

Jx Metals Corporation

Jx Nippon Mining Metals Corporation

Nikko Materials Company, Limited

Jx Advanced Metals Corporation

Hideki Kurita

Kenji Suzuki

Ryuichi Hirano

Shunsuke Oka

Masashi Nakamura

Taku Yoshida

Hideyuki Taniguchi

Masayuki Kimura

Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a WARP value of 3.5 μm or less, as measured with the back surface of the indium phosphide substrate facing upward.

Indium phosphide substrate, semiconductor epitaxial wafer, and method for producing indium phosphide substrate

Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a BOW value of −2.0 to 2.0 μm, as measured with the back surface of the indium phosphide substrate facing upward.

Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a SORI value of 2.5 &#x3bc;m or less, as measured with the back surface of the indium phosphide substrate facing upward.

The present invention provides: an InP wafer optimized from the viewpoint of small edge roll-off (ERO) and sufficiently high flatness even in the vicinity of a wafer edge; and a method for effectively producing the InP wafer. The InP wafer having a roll-off value (ROA) of from &#x2212;1.0 &#x3bc;m to 1.0 &#x3bc;m is obtained by using a method including: performing a first stage polishing under a processing pressure of from 10 to 200 g/cmfor a processing time of from 0.1 to 5 minutes, while supplying a polishing solution containing bromine to at least one side of an InP single crystal substrate that will form the InP wafer; and performing a second stage polishing under a processing pressure of from 200 to 500 g/cmfor a processing time of from 0.5 to 10 minutes, provided that the processing pressure is higher than that of the first stage polishing by 50 g/cmor higher.

Semiconductor wafer, and method for polishing semiconductor wafer

Provided is a CdTe-based semiconductor substrate for epitaxial growth, which is capable of growing good-quality epitaxial crystals without urging a substrate user to implement etching treatment before the epitaxial growth. A CdTe-based semiconductor substrate, in which tracks of linear polishing damage with a depth of 1 nm or more are not observed within a viewing range of 10 &#x3bc;m&#xd7;10 &#x3bc;m when a surface of the substrate is observed by an atomic force microscope, and orange peel defects are not observed when the surface of the substrate is visually observed under a fluorescent lamp, can grow the good-quality epitaxial crystals.

CdTe semiconductor substrate for epitaxial growth and substrate container

Provided is a semiconductor substrate for epitaxial growth which does not require any etching treatment as a pretreatment in the stage of performing an epitaxial growth of HgCdTe film. A CdTe system compound semiconductor substrate for the epitaxial growth of the HgCdTe film is housed in an inactive gas atmosphere, in a predetermined period of time (for example, 10 hours) after mirror finish treatment thereof, to thereby regulate the proportion of Te oxide of the total amount of Te on the substrate surface which is obtained by XPS measurement so as to be not more than 30%.

Semiconductor substrate for epitaxial growth and manufacturing method thereof

It is to provide a substrate for growing a semiconductor, which is effective for suppressing an occurrence of surface defects different in type from hillock defects in case of epitaxially growing a compound semiconductor layer, particularly an Al-based compound semiconductor layer. In a substrate for growing a compound semiconductor, in which a crystal surface inclined at a predetermined off angle with respect to a (100) plane is a principal plane, an angle made by a direction of a vector obtained by projecting a normal vector of the principal plane on the (100) plane and one direction of a [0-11] direction, a [01-1] direction, a [011] direction and a [0-1-1] direction is set to be less than 35&#xb0;, and the compound semiconductor layer is epitaxially grown on the substrate.

Substrate for growing compound semiconductor and epitaxial growth method

The present invention relates to a wafer storage container which contains a semiconductor wafer one by one and provides a technology to effectively reduce adhesion of particles on semiconductor wafer surfaces during the storage of the wafer. A wafer storage container which contains a wafer one by one, includes: a wafer containing member including a domed-shape recess which abuts on a circumferential edge of the wafer and is capable of holding the wafer; and a cover member which is engaged with the wafer containing member and is capable of sealing the wafer containing member; and a wafer rear surface protection member which is formed into a shape substantially same as an opening of the domed-shape recess and comes into contact with an entire rear surface of the wafer placed so that a front surface is directed the domed-shape recess.

Wafer storage container

An epitaxial growth method includes: supporting a substrate for growth (for example, an InP substrate) with a substrate supporter, growing a compound semiconductor layer comprising 3 or 4 elements (for example, a III-V group compound semiconductor such as an InGaAs layer, AlGaAs layer, AlInAs layer and AlInGaAs layer) on the substrate for growth by metal organic chemical vapor deposition, polishing the substrate so that an angle of gradient is 0.00&#xb0; to 0.03&#xb0; or 0.04&#xb0; to 0.24&#xb0; with respect to (100) direction in the entire effective area of the substrate, and forming the compound semiconductor layer to be 0.5 &#x3bc;m thick or more on the substrate by using the substrate for growth.

Epitaxial growth method and substrate for epitaxial growth

In a semiconductor wafer (W) having a periphery thereof chamfered, and having at least a main surface side thereof subjected to mirror finishing, an inclined surface () is formed on the periphery of the wafer, such that has an angle (&#x3b8;) of inclination of the inclined surface () with respect to a main surface () is not smaller than 5&#xb0; and not larger than 25&#xb0;, and at the same time a length (L) of the same in the radial direction of the wafer is 100 &#x3bc;m or longer. Further, the inclined surface is configured to have a non-mirror-finished portion () toward the periphery of the wafer.

Growing community of inventors

Kitaibaraki, Japan

Hideki Kurita