Sharp Kabushiki Kaisha Corporation

Kyocera Mita Corporation

Hideki Kitagawa

Hajime Imai

Tetsuo Kikuchi

Tohru Daitoh

Masahiko Suzuki

Yoshihito Hara

Teruyuki Ueda

Toshikatsu Itoh

Kengo Hara

Setsuji Nishimiya

Masaki Maeda

Tatsuya Kawasaki

Atsuhito Murai

Hisao Ochi

Junya Shimada

Mitsunori Imade

Tetsuo Fujita

Shinya Tanaka

Yoshiharu Hirata

Shingo Kawashima

Yoshiharu Kataoka

Jun Nishimura

Naoyuki Ishida

Kazunori Morimoto

Takuya Watanabe

Akihiro Kondo

Kikunosuke Tsuji

Satoru Yonemoto

Teruyuki Miyamoto

Yukihiro Ito

Hitoshi Takahata

Kunihiko Ishii

Kazuhisa Edahiro

Hiroyuki Harada

Yoshimasa Chikama

Masayuki Kakuta

Ryosuke Gunji

Masuo Kawamoto

Takehiro Murao

Kuniaki Araishi

Takao Matsumoto

Ryoji Nishimura

Yasuyuki Hirai

Hideki Takeda

Kotaro Kawasaki

Yutaka Aso

Seishi Kosegawa

Shinsuke Kawashima

Osamu Sugimoto

Yukihiko Nishiyama

Kouichi Sawada

Masaki Degichi

Kazuyoshi Osawa

An active matrix substrate includes a plurality of gate bus lines, a plurality of source bus lines located closer to the substrate side; a lower insulating layer that covers the source bus lines; an interlayer insulating layer that covers the gate bus lines; a plurality of oxide semiconductor TFTs disposed in association with respective pixel regions; a pixel electrode disposed in each of the pixel regions; and a plurality of source contact portions each of which electrically connects one of the oxide semiconductor TFTs to the corresponding one of the source bus lines, in which each of the oxide semiconductor TFTs includes an oxide semiconductor layer disposed on the lower insulating layer, a gate electrode disposed on a portion of the oxide semiconductor layer, and a source electrode formed of a conductive film, and each of the source contact portions includes a source contact hole, and a connection electrode.

Active matrix substrate

The present invention has an object to reduce the number of necessary masks to reduce manufacturing cost. A method of manufacturing a display device includes: forming electrodes or first lines; forming a first insulating film covering the electrodes or the first lines; forming a second insulating film covering the first insulating film; collectively forming first contact holes through the first insulating film and the second insulating film so as to expose parts of the electrodes or parts of the first lines; planarizing a surface of the second insulating film; and forming a first conductive layer to be connected from the surface of the second insulating film to the exposed parts of the electrodes or the exposed parts of the first lines via the first contact holes.

Method of manufacturing display device and display device

According to an embodiment of the present invention, an active matrix substrate () includes a display region (DR) defined by a plurality of pixel regions (P) arranged in a matrix and a peripheral region (FR) located around the display region. The active matrix substrate includes a substrate (), a first TFT (), and a second TFT (). The first TFT is supported by the substrate and disposed in the peripheral region. The second TFT is supported by the substrate and disposed in the display region. The first TFT includes a crystalline silicon semiconductor layer (), which is an active layer. The second TFT includes an oxide semiconductor layer (), which is an active layer. The first TFT and the second TFT each have a top-gate structure.

Active matrix substrate, liquid crystal display device, and organic EL display device

Active matrix substrate and method for manufacturing same

An active matrix substrate includes gate bus lines; source bus lines; a lower insulating layer; an oxide semiconductor TFT; and a pixel electrode, in which the oxide semiconductor TFT includes an oxide semiconductor layer disposed on the lower insulating layer, a gate electrode, a source electrode, and a first ohmic conductive portion that is coupled to the oxide semiconductor layer and the source electrode, the lower insulating layer includes a source opening portion exposing at least a portion of the source electrode, the first ohmic conductive portion is disposed on the lower insulating layer and in the source opening portion and is in direct contact with at least the portion of the source electrode in the source opening portion, and the first region of the oxide semiconductor layer is in direct contact with an upper surface of the first ohmic conductive portion.

Each of pixel regions of an active matrix substrate () includes: a lower insulating layer (); an oxide semiconductor layer () that is arranged on the lower insulating layer and includes an active region () of an oxide semiconductor TFT; an upper insulating layer () that is arranged on a portion of the oxide semiconductor layer so as not to be in contact with the lower insulating layer; an upper gate layer () that is arranged on the upper insulating layer and includes an upper gate electrode () and one of a plurality of gate bus lines (GL); and a source electrode and a drain electrode, wherein: the oxide semiconductor layerfurther includes an extension region () that extends from the active region () in a direction x different from a channel length direction y of the oxide semiconductor TFT as seen from a normal direction to the substrate; and the extension region () is arranged on the substrate side of one of the plurality of gate bus lines (GL) with an upper insulating layer () interposed therebetween, and includes a portion that extends so as to overlap with the one of the plurality of gate bus lines.

Active matrix substrate and production method therefor

An active matrix substrate includes: a substrate; lower bus lines and upper bus lines; a lower insulating layer positioned between the lower bus lines and the upper bus lines; an oxide semiconductor TFT that are disposed in each pixel region and have an oxide semiconductor layer disposed on the lower insulating layer; pixel electrodes disposed in each pixel region; and wiring connection units arranged in a non-display region. Each wiring connection unit includes: a lower conductive layer formed using the same conductive film as the lower bus lines; an insulating layer that extends on the lower conductive layer and includes the lower insulating layer. The lower bus lines and the lower conductive layer have a first laminated structure including a metal layer and a transparent conductive layer that covers an upper surface and a side surface of the metal layer.

Active matrix substrate and manufacturing method thereof

There is provided a high-definition active matrix substrate while suppressing an occurrence of pixel defects. The active matrix substrate includes a first semiconductor film corresponding to one of two sub-pixels adjacent to each other in a row direction, a second semiconductor film corresponding to the other of two sub-pixels, a transistor using part of the first semiconductor film as a channel in the row direction, and a pixel electrode connected to a drain electrode of the transistor through a contact hole. In a plan view, a distance (dc) in the row direction from a drain electrode-side edge of the channel to a bottom surface of the contact hole is 0.15 or more times a sub-pixel pitch (dp) in the row direction.

Active matrix substrate and liquid crystal display device

An active matrix substrate includes: a source metal layer including a plurality of source bus lines; a lower insulating layer covering the source metal layer; a oxide semiconductor TFT including an oxide semiconductor layer provided on the lower insulating layer; an inter-layer insulating layer covering the oxide semiconductor TFT; a pixel electrode provided on the inter-layer insulating layer; a common electrode including a plurality of sub common electrodes each of which is capable of functioning as a touch sensor electrode; a gate metal layer including a plurality of gate bus lines and a gate electrode; a drain metal layer including the drain electrode; and a plurality of touch sensor lines included in the drain metal layer and each electrically connected to any one of the sub common electrodes.

Active matrix substrate and liquid crystal display device with touch sensor

An active matrix substrate includes TFTs, an interlayer insulating layer, a common electrode, a first dielectric layer, pixel electrodes, a second dielectric layer, and touch wirings, in which each of the pixel electrodes at least partially overlaps the common electrode via the first dielectric layer, so that an auxiliary capacitance including each of the pixel electrodes, the common electrode, and the first dielectric layer is formed, the touch sensor electrodes include a first electrode, the touch wirings include a first wiring and a second wiring in the touch sensor electrodes, the second wiring extends to the other electrode across the first electrode when viewed from a normal direction, and a portion of the second wiring overlaps the first electrode via the first and the second dielectric layers, so that a touch wiring capacitance including the second wiring, the first electrode, the first and the second dielectric layers is formed.

Active matrix substrate, liquid crystal display device with touch sensor using active matrix substrate, and method for manufacturing active matrix substrate

A semiconductor device () includes a TFT () supported on a substrate (), wherein the TFT () includes a gate electrode (), a gate insulating layer () that covers the gate electrode (), and an oxide semiconductor layer () that is formed on the gate insulating layer (). The oxide semiconductor layerhas a layered structure including a first oxide semiconductor layer () in contact with the gate insulating layer () and a second oxide semiconductor layer () layered on the first oxide semiconductor layer (). The first oxide semiconductor layer () and the second oxide semiconductor layer () both include In, Ga and Zn; an In atomic ratio of the first oxide semiconductor layer () is greater than a Zn atomic ratio thereof, and an In atomic ratio of the second oxide semiconductor layer () is smaller than a Zn atomic ratio thereof; and the oxide semiconductor layer () has a side surface of a forward tapered shape.

Semiconductor device and method for producing same

An oxide semiconductor TFT () of an active matrix substrate includes an oxide semiconductor layer (), an upper gate electrode () disposed on a part of the oxide semiconductor layer via a gate insulating layer, and a source electrode () and a drain electrode (). As viewed from a normal direction of the substrate, the oxide semiconductor layer () includes a first portion (p) that overlaps the upper gate electrode, and a second portion (p) that is located between the first portion and the source contact region or drain contact region, such that the gate insulating layer does not cover the second portion. The upper gate electrode () has a multilayer structure including an alloy layer (L) that is in contact with the gate insulating layer and a metal layer (U) that is disposed on the alloy layer. The metal layer is made of a first metallic element M; the alloy layer is made of an alloy containing the first metallic element M; and the first metallic element M is Cu, Mo, or Cr.

Active matrix substrate and method for producing same

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Sakai, Japan

Hideki Kitagawa