Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Panasonic Semiconductor Solutions Co., Ltd.

Nuvoton Technology Corporation Japan

Hideki Kasugai

Kazuhiko Yamanaka

Kiyoshi Morimoto

Kimihiro Murakami

Hirotaka Ueno

Kenji Narita

Masao Kawaguchi

Satoshi Tamura

Nobuyasu Suzuki

Hiroshi Ohno

Kenji Orita

Katsuya Samonji

Shinichiro Nozaki

Ryo Kajitani

Takuma Katayama

Hideo Yamaguchi

Norio Ikedo

Kazuyuki Matsumura

A hair cutting device according to the present disclosure comprises an optical waveguide. The optical waveguide comprises a light irradiator. The light irradiator irradiates hair protruding from the skin with light to cut the hair. The refractive index of the light irradiator is smaller than the refractive index of the surface of the skin. As a result, options such as the material of the optical waveguide and the like can be increased. Furthermore, for example, when the skin is appropriately irradiated with light from the light irradiator, an action on the skin such as sterilization or activation can also be expected.

Hair cutting device and hair cutting system

A hair cutting member includes a light emitting module and a connecting member. The light emitting module includes an optical waveguide including a core, and a retaining member retaining the optical waveguide with at least a portion of the core being exposed so as to apply light to hair growing on a skin. The connecting member is integrally joined to the light emitting module with the connecting member retaining an end of the optical waveguide, and positions the core with respect to light introduced into the optical waveguide. The connecting member is mechanically connectable to a connection target. The core is configured so that light is introduced from an end thereof that faces the connection target. The technology of the present disclosure improves ease of assembly of a hair cutting member, a device body of a hair cutting device, and a hair cutting device.

Hair cutting member, device body of hair cutting device, and hair cutting device

A hair cutting member includes an optical waveguide, a connecting member, and a bonding member. The optical waveguide includes a core and a cladding that covers at least a portion of the core. The optical waveguide is disposed so as to emit light to hair growing on a skin. The connecting member retains an end of the optical waveguide. The bonding member bonds the optical waveguide and the connecting member to each other. The core is disposed off-center toward the outer circumference of the cladding. When viewed from an end face of the connecting member, a first distance between a center of the end face and an optical axis of the core is shorter than a second distance between the center of the end face and a center of the cladding. The technology of the present disclosure makes it possible to adjust the optical system of a hair cutting device easily.

Hair cutting member and hair cutting device

A hair cutting device of the present disclosure comprises an optical waveguide and a holding member that holds the optical waveguide. The optical waveguide comprises a light irradiator. The light irradiator irradiates hair protruding from skin with light to cut the hair. The holding member holds the optical waveguide in such a way that the light irradiator is exposed from at least one surface. As a result, even when the hair or the skin comes in contact with the light irradiator, misalignment or the like of the optical waveguide hardly occurs. This results in the improved hair cutting device being provided.

A light source device includes a semiconductor light-emitting device which emits coherent excitation light, and a wavelength conversion element which is spaced from the semiconductor light-emitting device, generates fluorescence by converting the wavelength of the excitation light emitted from semiconductor light-emitting device, and generates scattered light by scattering the excitation light. The wavelength conversion element includes a support member, and a wavelength converter disposed on the support member. The wavelength converter includes a first wavelength converter, and a second wavelength converter which is disposed around the first wavelength converter to surround the first wavelength converter in a top view of the surface of the support member on which the wavelength converter is disposed. The ratio of the intensity of fluorescence to that of scattered light is lower in the second wavelength converter than in the first wavelength converter.

Light source device and lighting device

A light emitting device includes a wavelength conversion element, and an excitation light source which radiates excitation light to the wavelength conversion element. The wavelength conversion element includes a support member having a supporting surface, and a wavelength conversion member disposed on the supporting surface so as to be contained within the support member when the support member is viewed from the supporting surface side. An outer peripheral region on the support member, which is an outer peripheral portion of an arrangement region including the wavelength conversion member and is exposed from the wavelength conversion member, includes a light absorbing portion which can absorb first light having same wavelength as the excitation light or a light scattering portion which can scatter the first light. The arrangement region includes a reflective member which is disposed between the wavelength conversion member and the support member, and is different from the support member.

Wavelength conversion element and light emitting device

A light source device includes: a semiconductor light-emitting device including a flat-shaped base having a first main surface on a first side and a second main surface and a semiconductor light-emitting element disposed on the first side; a first fixing component having a first through-hole and a first pressing surface that presses the first main surface; and a second fixing component having a second through-hole and a second pressing surface that presses the second main surface. The base is fixed between the first and second pressing surfaces by an engagement between a first inner surface surrounding the first through-hole of the first fixing component and a second outer surface of the second fixing component. A distance between the first and second pressing surfaces is smaller than or equal to a thickness of the base, and a void is formed lateral to the base between the first and second pressing surfaces.

Light source device

In a light source in which a semiconductor luminescence element and a phosphor are combined, red light having high color purity is efficiently radiated. The light source includes: a semiconductor luminescence element; a fixed or rotatable first wavelength converting unit; and a rotatable second wavelength converting unit. The second wavelength converting unit includes: a second wavelength converting region that absorbs output light emitted from the semiconductor luminescence element and radiates light having a second wavelength different from that of the output light; and a transmission region that transmits the output light. The first wavelength converting unit absorbs the output light to radiate light having a first wavelength longer than the second wavelength of the light, and the light having the first wavelength is transmitted through the transmission region.

Light source and image projection apparatus

A semiconductor light emitting element includes an n-type light guide layer containing a group III nitride semiconductor, an active layer, and a p-type light guide layer, in which the n-type light guide layer includes a semiconductor superlattice layer which is a stack of superlattice layers, the semiconductor superlattice layer having a structure in which group III nitride semiconductors A and group III nitride semiconductors B are alternately stacked, each of the semiconductors A and each of the semiconductors B being stacked in each of the superlattice layers, a relationship Eg (A)&#x3e;Eg (B) holds, the semiconductor A is a film containing AlInN, and the film contains oxygen (O) at a concentration of at least 1&#xd7;10cm, the semiconductor A has a film thickness of at most 5 nm, and a current is injected in a stacking direction of the superlattice layers.

Semiconductor light emitting element

A light-emitting device includes: a semiconductor light-emitting element which emits light of a first wavelength; and a first wavelength conversion unit which includes a first phosphor and emits light of a second wavelength by being excited by the light of the first wavelength. The first phosphor contains europium as an activator. The light of the first wavelength is emitted to the first wavelength conversion unit at 1 kW/cmor greater. 1&#x2266;&#x3b7;1/&#x3b7;1&#x2266;1.17 is satisfied where &#x3b7;1 is light output ratio of the light of the first wavelength to the light of the second wavelength, &#x3b7;1is light output ratio obtained when the light of the first wavelength is emitted to the first wavelength conversion unit at 5 kW/cm, and &#x3b7;1is light output ratio obtained when the light of the first wavelength is emitted to the first wavelength conversion unit at 2.5 kW/cm.

Light-emitting device and projection apparatus

A nitride semiconductor light-emitting device having an optical waveguide includes, in the following order, at least: a first cladding layer; an active layer; and a second cladding layer, wherein the second cladding layer includes (i) a transparent conductive layer comprising a transparent conductor and (ii) a nitride semiconductor layer comprising a nitride semiconductor, the nitride semiconductor layer being formed closer to the active layer than the transparent conductive layer.

Nitride semiconductor light-emitting device

A semiconductor laser device includes a semiconductor multilayer structure selectively grown on a substrate other than on a predetermined region of the substrate. The semiconductor multilayer structure includes an active layer, and has a stripe-shaped optical waveguide extending in a direction intersecting a front facet through which light is emitted. The active layer has an abnormal growth portion formed at a peripheral edge of the predetermined region, and a larger forbidden band width portion formed around the abnormal growth portion and having a larger width of a forbidden band than that of a portion other than the abnormal growth portion of the active layer. The optical waveguide is spaced apart from the abnormal growth portion and includes the larger forbidden band width portion at the front facet.

Semiconductor laser device and method for manufacturing the same

A nitride semiconductor device includes a first nitride semiconductor layer formed on a substrate, a defect induced layer formed on the first nitride semiconductor layer, and a second nitride semiconductor layer formed on the defect induced layer, contacting the defect induced layer, and having an opening through which the defect induced layer is exposed. The defect induced layer has a higher crystal defect density than those of the first and second nitride semiconductor layers.

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Shiga, Japan

Hideki Kasugai