Fujitsu Corporation

Hideki Kano

Satoshi Eto

Masato Matsumiya

Toshikazu Nakamura

Ayako Kitamoto

Mitsuhiro Higashiho

Kuninori Kawabata

Masato Takita

Toru Koga

Masao Taguchi

Shinichi Yamada

Yoshinori Okajima

Koichi Nishimura

Satoru Saitoh

Shusaku Yamaguchi

A semiconductor memory device includes a core area formed of memory blocks each having a relaxed sense amplifier arrangement, a data bus including data bus lines corresponding to the memory blocks, a plurality of input/output terminals provided in number corresponding to the data bus lines forming the data bus, and a data path switch circuit provided between the data bus the input/output terminals for providing interconnection paths between the input/output terminals and the data bus lines, wherein the data path switch circuit switches a part of the interconnection paths in response to a switch control signal such that the input/output terminals are connected respectively to predetermined memory cells located at respective, predetermined physical locations in any of the memory blocks.

Semiconductor memory device having a relaxed pitch for sense amplifiers

A variable delay circuit includes a first gate having a first delay amount, and a second gate having a second delay amount greater than the first delay amount. A difference between the first delay amount and the second delay time is less than the first delay amount.

Variable delay circuit and semiconductor integrated circuit device

A semiconductor integrated circuit device has a data holding section for storing information, a counter for counting the number of externally applied pulses, and a comparison/verification section. The comparison/verification section compares an output of the counter with an output of the data holding section, and verifies whether the outputs match or not. This configuration serves to reduce the number of wiring lines formed from pads to a comparison/verification circuit (a signature circuit), and thereby achieves a reduction in layout area and facilitates efficient layout work.

Semiconductor integrated circuit device capable of reading out chip-specific information during testing and evaluation

A semiconductor memory device, in which the output is restored to high impedance state and capable of operating always normally even when a prohibited command is input thereto, is disclosed. The device has a common terminal for data input and output, and data are output in synchronism with a clock. The device further comprises an output clock generating circuit for generating a clock in accordance with the output period of the output data, and an output circuit for producing the output data in accordance with the clock. The output clock generating circuit is turned off after generating an additional two cycles of the clock following the end of the production of the output data.

Semiconductor memory device for inputting/outputting data through a common terminal and outputting data in synchronism with clock

A semiconductor memory device includes a memory cell connected to a bit line and a word line, a bit line precharge circuit which precharges the bit line to a ground voltage, and a word decoder which sets the word line to a negative voltage when the word line is not selected.

Semiconductor memory device

A semiconductor memory device includes at least one cell block including an array of memory cells, a plurality of sense amplifiers which temporarily hold data of the memory cells, a first data bus connected to the plurality of sense amplifiers via first gates, and a second data bus having a direct electrical connection to the first data bus and being laid out to extend through a position of the at least one cell block.

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Kawasaki, Japan

Hideki Kano