Kabushiki Kaisha Toshiba

Hideki Kanai

Shinichi Ito

Ikuo Yoneda

Soichi Inoue

Masamitsu Itoh

Takashi Sato

Masafumi Asano

Shingo Kanamitsu

Kyoko Izuha

Koji Hashimoto

Satoshi Tanaka

Kenji Kawano

Hirokazu Kato

Shoji Mimotogi

Satoshi Usui

Yusuke Kasahara

Osamu Ikenaga

Shimon Maeda

Ayako Kawanishi

Yukiyasu Arisawa

Hiroki Yamamoto

According to one embodiment, a pattern forming method includes forming a resist pattern on an under-layer, forming a recessed portion in the under-layer by etching the under-layer using the resist pattern as a mask, slimming the resist pattern, forming a neutral layer having an affinity for first and second polymers on a region of the under-layer not covered with the slimmed resist pattern, forming a block copolymer film containing the first polymer and the second polymer on the slimmed resist pattern and the neutral layer, and forming a microphase separation pattern comprising a first portion formed of the first polymer and a second portion formed of the second polymer by applying microphase separation processing to the block copolymer film.

Pattern forming method

In one embodiment, a method of manufacturing a semiconductor device includes forming a convex portion including an interconnect and a first film above a substrate, forming a second film on the convex portion, and forming a concave portion having a first bottom face of the first film and a second bottom face lower than the upper face of the first film in the second film. The method further includes forming a polymer film in the concave portion by using a polymer that includes first and second portions respectively having first and second affinities for the first film, phase-separating the first and second portions to form a first pattern containing the first portion and located on the first bottom face and a second pattern containing the second portion and located on the second bottom face in the polymer film, and selectively removing the first or second pattern.

Method of manufacturing semiconductor device

According to one embodiment, a pattern forming method includes forming a first guide layer on a processed film, phase-separating a first self-assembly material with the use of the first guide layer to form a first self-assembly pattern including a first polymer portion and a second polymer portion, selectively removing the first polymer portion, forming a second guide layer with the use of the second polymer portion, and phase-separating a second self-assembly material with the use of the second guide layer to form a second self-assembly pattern including a third polymer portion and a fourth polymer portion.

A method of generating an inspection data used for inspecting an inspection-object pattern on a substrate, the inspection-object pattern formed by transferring a first mask pattern formed on a first mask and a second mask pattern formed on a second mask onto one layer on the substrate, a part of a first transferred pattern of the first mask pattern and a part of a second transferred pattern of the second mask pattern being overlapped on the layer. The method performs a corner process on each corner of a first design data of the first mask pattern and each corner of a second design data of the second mask pattern and generates an inspection data by performing a logical operation using the corner-processed first design data and the corner processed second design data.

Generating image inspection data from subtracted corner-processed design data

A method of evaluating a photo mask, includes measuring each dimension of a plurality of pattern portions of a mask pattern formed on a photo mask, obtaining an inter-pattern distance between the pattern portion and a pattern different from the pattern portion with respect to each of the pattern portions, obtaining a dimensional difference between the measured dimension of the pattern portion and a target dimension of the pattern portion with respect to each of the pattern portions, grouping the dimensional difference obtained for each pattern portion into a plurality of groups in accordance with the inter-pattern distance obtained for each pattern portion, obtaining an evaluation value based on the dimensional difference in each group with respect to each of the groups, and evaluating the photo mask based on the evaluation value.

Method of evaluating a photo mask and method of manufacturing a semiconductor device

A reticle has a mask substrate, a test pattern established on the mask substrate having an asymmetrical diffraction grating so as to generate positive first order diffracting light and negative first order diffracting light in different diffraction efficiencies, and a device pattern adjacent to the test pattern established on the mask substrate.

Reticle, apparatus for monitoring optical system, method for monitoring optical system, and method for manufacturing reticle

A writing pattern data generating method for, in order to form a first photomask for use in a manufacturing method of a semiconductor device which including forming a first resist pattern on a mask film formed on a first film using the first photomask, forming a first mask pattern by etching the mask film, removing the first resist pattern, forming a second resist film on the mask film, forming a second resist pattern on the mask film, forming a second mask pattern by etching the mask film, removing the second resist pattern, and forming a first film pattern by etching the first film, the generating method comprising correcting a first pattern data in accordance with a difference between the first film pattern and the second mask pattern and a difference between the first resist pattern and the first mask pattern.

Photomask correcting method and manufacturing method of semiconductor device

A method of correcting mask data performs a proximity effect correction process to a pattern shape of a photomask to form a photosensitive material film provided on a substrate to be processed or a film to be processed by using the photosensitive material film as a mask into a pattern of a desired-shape. Model-based proximity effect correction is performed to the pattern shape of the photomask to correct the pattern shape of the photomask, an estimated shape of the pattern in the photosensitive material film or the film to be processed is calculated on the basis of the pattern shape of the photomask subjected to the model-based proximity effect correction, an error between the calculated estimated shape and the desired shape is calculated, and rule-based proximity effect correction is performed to a predetermined interested portion on the basis of the calculated error to further correct the pattern shape of the photomask.

Method of correcting mask data, method of manufacturing a mask and method of manufacturing a semiconductor device

Disclosed is a mask comprising a first area including a first surrounding area in which a halftone phase shift film or a stacked film of a halftone phase shift film and an opaque film is provided on a transparent substrate, and a first opening area surrounded by the first surrounding area, and a second area including a second surrounding area in which a halftone phase shift film is provided on the transparent substrate and a second opening area surrounded by the second surrounding area, wherein a transparent film is provided in at least a part of the second opening area, the transparent film being configured to give a predetermined phase difference to exposure light passing through that part of the second opening area in which the transparent film is provided relative to exposure light passing through the second surrounding area.

Mask, manufacturing method for mask, and manufacturing method for semiconductor device

A method for manufacturing a semiconductor device includes the steps of preparing an exposure mask in which repeat pattern portions obtained by repeatedly arranging the same pattern and non-repeat pattern portions are separately formed in a plurality of regions of one exposure mask and phase shifters for changing a phase of illumination light are provided in at least part of the repeat pattern portions, preparing a semiconductor wafer having a plurality of chip areas, aligning a pattern of one of the plurality of regions of the exposure mask with each of the plurality of chip areas on the semiconductor wafer, effecting an exposing process in an illuminating condition corresponding to the pattern of the above one region, aligning the pattern of a different one of the plurality of regions on the exposure mask with each of the plurality of chip areas on the semiconductor wafer, and effecting an exposing process in an illuminating condition corresponding to the pattern of the different one region, wherein the step of exposing the pattern of the different one of the plurality of regions on the exposure mask is repeatedly effected until the exposing process for all of the plurality of regions of the exposure mask is completed.

Method for manufacturing a semiconductor device and an exposure mask

A plasma etching method includes the steps of forming an etching mask on a work piece, forming a patterned film, made of a material having an etching rate of 80% or more to 120% or less based on an etching rate for the work piece, on the work piece having the etching mask thereon, and etching the work piece and the patterned film formed thereon at the same time by use of a reactive gas plasma, wherein the film is formed with such a thickness that the thickness of a remaining portion of the film is equal to zero or more after the work piece is etched to a desired depth.

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Yokohama, Japan

Hideki Kanai