Murata Manufacturing Co., Ltd.

Hideki Iwamoto

Tsutomu Takai

Ryo Nakagawa

Syunsuke Kido

Munehisa Watanabe

Hajime Kando

Katsuya Daimon

Takashi Yamane

Yuichi Takamine

Shou Nagatomo

Masanori Otagawa

Tetsuya Kimura

Takuya Koyanagi

Keiji Okada

Yasumasa Taniguchi

Mari Saji

Sho Nagatomo

Koji Yamamoto

Takeshi Nakao

Korekiyo Ito

Ryo Otsubo

Hidetaro Nakazawa

Ippei Hatsuda

Harunobu Horikawa

Masayuki Morita

Kohei Fujio

An acoustic wave device includes a piezoelectric layer and first and second electrodes facing each other in a direction intersecting a thickness direction of the piezoelectric layer. The acoustic wave device utilizes a bulk wave in a thickness-shear primary mode. A material of the piezoelectric layer is lithium niobate or lithium tantalate. At least a portion of each of the first and second electrodes is embedded in the piezoelectric layer.

Acoustic wave device

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

Elastic wave device and method for manufacturing the same

An acoustic wave device includes an IDT electrode and reflector electrodes on or above a piezoelectric substrate. A region in which first and second electrode fingers of the IDT electrode overlap each other in an acoustic wave propagation direction defines an intersection region. The intersection region includes a center region and first and second edge regions on both sides of the center region. Dielectric films extend from the first and second edge regions to outer side regions in the acoustic wave propagation direction of the reflector electrodes via the reflector electrodes.

An acoustic wave device includes a support substrate, first and second piezoelectric layers, and an IDT electrode. The first and second piezoelectric layers are on the support substrate. The IDT electrode is on the first piezoelectric layer and includes electrode fingers. The second piezoelectric layer is between the first piezoelectric layer and the support substrate. The first and second piezoelectric layers are made of lithium tantalate or lithium niobate. Euler angles of the second piezoelectric layer are different from Euler angles of the first piezoelectric layer.

An acoustic wave device includes a support substrate, a piezoelectric layer, and an IDT electrode. The piezoelectric layer is over the support substrate. The IDT electrode is on the piezoelectric layer, and includes a plurality of electrode fingers. An intersecting width of the plurality of electrode fingers is equal to or smaller than about 5λ.

An acoustic wave device includes a high acoustic velocity support substrate defining and functioning as a high acoustic velocity member, a low acoustic velocity film, a piezoelectric film, and an IDT electrode that are laminated in this order. When a wavelength of an acoustic wave determined by an electrode finger cycle of the IDT electrode is represented by λ, a film thickness of the piezoelectric film is about 1.5λ or more and about 3.5λ or less. The acoustic velocity of a bulk wave propagating in the high acoustic velocity support substrate is higher than the acoustic velocity of an acoustic wave propagating in the piezoelectric film. The acoustic velocity of a bulk wave propagating in the low acoustic velocity film is lower than the acoustic velocity of an acoustic wave propagating in the piezoelectric film.

Acoustic wave device, high-frequency front end circuit, and communication device

An acoustic wave device includes a support substrate, a piezoelectric film, a functional electrode, and a support. The support substrate includes a cavity. The piezoelectric film is provided on the support substrate to cover the cavity. The functional electrode is provided on the piezoelectric film to overlap the cavity when viewed in a plan view. The support is in the cavity of the support substrate to support the piezoelectric film. The functional electrode includes electrodes arranged in a direction crossing the thickness direction of the piezoelectric film. The electrodes include a first electrode and a second electrode. The first electrode and the second electrode oppose each other in a direction crossing the thickness direction of the piezoelectric film and are connected to different potentials. Adjacent ones of the electrodes overlap each other in a direction orthogonal to a longitudinal direction of the first electrode.

An acoustic wave device includes a support substrate, a piezoelectric layer, and an IDT electrode. The support substrate is made of quartz. The piezoelectric layer is provided on the support substrate and is made of LiTaO. The IDT electrode is on the piezoelectric layer and includes electrode fingers. The IDT electrode is on a negative surface side of the piezoelectric layer. The cut angle of the piezoelectric layer is equal to or more than about 39° Y and equal to or less than about 48° Y.

Acoustic wave device, high-frequency front-end circuit, and communication device

An acoustic wave device includes a piezoelectric body including first and second main surfaces facing each other, an IDT electrode provided on the first main surface of the piezoelectric body and including electrode fingers, a high acoustic velocity member on the second main surface side of the piezoelectric body, in which an acoustic velocity of a propagating bulk wave is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric body, and a first dielectric film provided on an upper surface of the electrode fingers, in which a portion where a dielectric is not present is provided between the electrode fingers of the IDT electrode.

An acoustic wave device includes a silicon oxide film, a lithium tantalate film, an IDT electrode, and a protection film that are laminated on a support substrate made of silicon. A wavelength normalized film thickness of a lithium tantalate film is denoted by T, an Euler angle is θ, a wavelength normalized film thickness of the silicon oxide film is T, a wavelength normalized film thickness of the IDT electrode in terms of aluminum thickness is T, a wavelength normalized film thickness of a protection film is T, a propagation direction in the support substrate is ψ, and a wavelength normalized film thickness of the support substrate is T. Values of T, θ, T, T, T, and ψare set such that Icorresponding to an intensity of a response of a spurious response represented by Formula (1) is greater than about −2.4 in a spurious response.

Acoustic wave device, acoustic wave filter, and composite filter device

An acoustic wave device includes N band pass filters with first ends connected to define a common connection and having different pass bands. At least one of the band pass filters includes acoustic wave resonators including a lithium tantalate film having Euler angles (φ=0°±5°, θ, ψ=0°±15°), a silicon support substrate, a silicon oxide film between the lithium tantalate film and the silicon support substrate, an IDT electrode, and a protective film. In at least one acoustic wave resonator, a frequency fsatisfies Formula (3) or Formula (4) for all m where m>n:  Formula (3); and  Formula (4).In Formulas (3) and (4), fand frepresent the frequencies of the high-frequency end and the low-frequency end of the pass band in the m band pass filters.

Acoustic wave device, radio-frequency front end circuit, and communication device

An elastic wave device includes a support substrate made of silicon, a piezoelectric film disposed directly or indirectly on the support substrate, and an interdigital transducer electrode disposed on one surface of the piezoelectric film. A higher-order mode acoustic velocity of propagation through the piezoelectric film is equal or substantially equal to an acoustic velocity V=(V)of propagation through silicon or higher than the acoustic velocity V, where Vis specified by Vamong solutions V, V, and Vwith respect to x derived from Ax+Bx+Cx+D=0.

Elastic wave device, high-frequency front-end circuit, and communication device

An acoustic wave device is provided between a first terminal that is an antenna terminal and a second terminal that is different from the first terminal, and includes a plurality of acoustic wave resonators. The plurality of acoustic wave resonators include a plurality of series arm resonators and a plurality of parallel arm resonators. When the acoustic wave resonator electrically closest to the first terminal among the plurality of acoustic wave resonators is an antenna end resonator, the antenna end resonator is a SAW resonator or a BAW resonator. At least one acoustic wave resonator other than the antenna end resonator among the plurality of acoustic wave resonators is a first acoustic wave resonator.

Acoustic wave device, multiplexer, high-frequency front end circuit, and communication device

An acoustic wave device includes a (111)-oriented silicon substrate, a silicon nitride layer, a silicon oxide layer, a lithium tantalate layer, and an IDT electrode on the lithium tantalate layer. When the wavelength determined by the electrode finger pitch of the IDT electrode is &#x3bb;, the thickness of the silicon nitride layer, SiN [&#x3bb;], the thickness of the silicon oxide layer, SiO[&#x3bb;], the thickness of the lithium tantalate layer, LT [&#x3bb;], and one of the Euler angles of the lithium tantalate layer, LT&#x3b8; [deg.], are thicknesses and an angle in ranges in which the phase of a first higher-order mode is about &#x2212;20&#xb0; or less.

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Nagaokakyo, Japan

Hideki Iwamoto