Sony Corporation

Sumitomo Electric Industries, Limited

Oki Electric Industry Co., Ltd.

Sumitomo Electric, Ltd.

Hideki Itoh

Yuuichi Ashibe

Hisahiro Tanaka

Asaya Hondo

Provided is an in-vehicle electronic apparatus including a main body that includes a panel attaching/detaching part, and a panel that is attached to and detached from the panel attaching/detaching part. The panel attaching/detaching part is provided with a lock mechanism and a holding lever, the lock mechanism being arranged to lock the panel to the main body, the holding lever being rotatable and being arranged to hold the panel when the holding lever is rotated to a holding position. The panel is moved in a predetermined direction with respect to the main body such that locking of the panel to the main body by the lock mechanism is released. When the panel is moved in the predetermined direction such that the locking is released, the holding lever is rotated to the holding position due to inertia such that the panel is held by the holding lever.

In-vehicle electronic apparatus

The present invention offers a sealing-end structure for a superconducting cable. The structure performs, through a bushing, the outputting and inputting of electric power between a normal-temperature side and a cryogenic-temperature side, where an end portion of a superconducting cable is placed. The sealing-end structure is provided with a coolant vessel at the cryogenic-temperature side for cooling the bushing. The coolant vessel has a liquid-coolant region filled with a liquid coolant and a gaseous-coolant region filled with a gaseous coolant. The coolant vessel is provided with a contraction-absorbing portion for absorbing the contraction of the coolant vessel when it thermally contracts by the effect of the coolant. The sealing-end structure for a superconducting cable suppresses the deterioration of the sealing performance of sealing members placed at the boundary between the normal-temperature side and the cryogenic-temperature side over a long period of use.

Sealing-end structure for superconducting cable

A cryogenic apparatus of superconducting equipment with excellent assembly workability and a termination structure of a superconducting cable including the cryogenic apparatus are provided. A termination structure of a superconducting cable includes a terminal of the superconducting cable disposed on a low-temperature side, a bushingfor communicating power between the low-temperature side and a room-temperature side, a connection partconnecting the terminal of the cable and the bushing, and a terminal connection boxaccommodating the connection part. The terminal connection boxincludes a coolant vesselaccommodating a terminal of the bushingon the low-temperature side and the connection partand filled with a coolant for cooling the terminal and the connection partand a vacuumed vesseldisposed so as to surround the coolant vessel. The vacuumed vesselincludes a first vacuum partwhere a vacuum can be maintained irrespective of the presence or absence of the bushing

Cryogenic apparatus of superconducting equipment

In a NAND-type memory device, an area required to form a memory array thereof can be reduced. In one NAND-type memory device 30, a bit line 32A and another bit line 32B are extended in parallel to each other. These bit lines 32A and 32B are connected via bit contacts 36A and 36B to a first memory cell 34A, and a second memory cell located adjacent to the first memory cell 34A along a word line direction. A bit contact 36A and another bit contact 36B are arranged along a diagonal line direction while intersecting the respective first and second memory cells, respectively. The bit contact 36A is employed so as to connect a drain region of the first memory cell 34A to the bit line 32A. The bit contact 36B is employed in order to connect a drain region of the second memory cell to the bit line 32B. On the opposite side of the bit contact 36A by sandwiching the first memory cell 34A, a source contact 38A for connecting a source diffusion layer to a source line is provided adjacent to the bit contact 36B. A source line 40 is formed between a control gate 42 and the bit line 32, and then is connected via another source contact 38B to a diffusion layer 44.

Nand-type semiconductor memory device

Each of the bit lines of a semiconductor memory has an intermediate section with low electrical resistance and low electromigration resistance. If the bit line is shorted to a word line, during burn-in the electrical resistance of the intermediate section increases because of electromigration, thereby preventing excess current from leaking through the shorted bit line during subsequent use.

Growing community of inventors

Tokyo, Japan

Hideki Itoh