Mitsubishi Denki Kabushiki Kaisha

Ricoh Company, Ltd.

Renesas Technology Corp.

Renesas Electronics Corporation

Hideki Ishii

Takeshi Koyama

Jun Shibata

Kazunari Michii

Takehiko Maeda

Koji Bando

Takayuki Kunieda

Andrew T Serbinski

Moriyoshi Nakashima

Yuki Wakita

Takeumi Kato

Kenji Ikura

A semiconductor device capable of suppressing propagation of a crack caused by a temperature cycle at a bonding part between a bonding pad and a bonding wire is provided. A semiconductor device according to an embodiment includes a semiconductor chip having bonding pads and bonding wires. The bonding pad includes a barrier layer and a bonding layer formed on the barrier layer and formed of a material containing aluminum. The bonding wire is bonded to the bonding pad and formed of a material containing copper. An intermetallic compound layer formed of an intermetallic compound containing copper and aluminum is formed so as to reach the barrier layer from the bonding wire in at least a part of the bonding part between the bonding pad and the bonding wire.

Semiconductor device and method of manufacturing the same

An information editing device includes an index generating unit that generates, in a plurality of different formats, a plurality of pieces of index information indicative of a list of the pieces of screen image information each for one scene; and a display controlling unit that switches the pieces of index information generated by the index generating unit based on an input instruction of a user.

Information editing device, information editing method, and computer product

One of the aspects of the present invention is to provide a semiconductor device, which includes a circuit board, a first semiconductor chip mounted on the circuit board, a built-in semiconductor package on the first semiconductor chip, and a first molded resin encompassing the first semiconductor chip and the built-in semiconductor package. The built-in semiconductor package includes at least one second semiconductor chip mounted on a die pad, and the second semiconductor chip has a plurality of terminals. Also, the built-in semiconductor package includes a plurality of lead frames, and each of the lead frames is electrically connected with respective one of the terminals of the second semiconductor chip, and has a connection region on one side and a support region on the other opposing side. Further, the built-in semiconductor package a second molded resin encompassing the die pad, the second semiconductor chip, and the lead frames so that each of the connection regions is exposed and each of the support regions is covered. While the second molded resin has top and bottom surfaces, a plane flush with the connection region locates between the top and bottom surfaces of the second molded resin.

Semiconductor device and manufacturing process thereof

A resin-sealed semiconductor device has a first semiconductor chip whose circuit surface is bonded to a surface of a die pad. The back surface of a second semiconductor chip is bonded to the back surface of the first semiconductor chip. Each of the semiconductor chips is connected by wire to outer lead respectively. A sealing resin is provided for encapsulating the die pad, the first and second semiconductor chips and the wires so that the other surface of the die pad is exposed.

Resin-sealed semiconductor device

A semiconductor device includes a first semiconductor package and a second semiconductor package which is mounted onto the first semiconductor package. The first semiconductor package has lands on an upper surface for mounting the second semiconductor package and lands on the lower surface for external connection, which are used for connection with a mounting substrate. The second semiconductor package has external leads which are connected to the lands for mounting the second semiconductor package.

Semiconductor device

A semiconductor device with reduced thickness, improved heat radiation, and a stacked structure. Molded resin covers an IC chip wire and part of a die pad. The die pad is exposed from the molded resin. An external lead in the same plane as the exposed surface of the die pad extends to a side of the resin opposite the die pad and along the molded resin. This structure allows a reduction in thickness of the semiconductor device, the exposed die pad improves heat radiation, and the external lead on upper and lower surfaces of the resin allows the semiconductor devices to be stacked.

Packed semiconductor device with wrap around external leads

A semiconductor device of the present invention enables mounting with a reduced thickness and a high density. IC packages (17) are mounted in each opening (12) on both surfaces of a substrate (11) in such a way that package bodies (18) are half accommodated in the opening (12) formed in the substrate (11).

Reduced thickness semiconductor device with IC packages mounted in

A process for reflow mounting an electronic component includes coating a terminal electrode on a mounting board with a second solder having a second melting point higher than a reflow temperature, placing the mounting board with the electronic component on a mounting land on a conveyor which may be brought into contact with the second solder on the terminal electrode, and heating the mounting board to the reflow temperature. The terminal electrode may be coated with a solder repelling material at a selected dividing area effective for dividing the terminal electrode into a plurality of sections substantially isolated from each other in terms of solder flow. Alternatively, a mounting jig may be used for supporting the mounting board without bringing the second solder on the terminal electrode into contact with the mounting jig.

Growing community of inventors

Tokyo, Japan

Hideki Ishii