Sharp Kabushiki Kaisha Corporation

Hideki Ichikawa

Toshihiko Yoshida

Mamoru Okanishi

Terumitsu Santo

Hiroshi Nakatsu

Hiroshi Chikugawa

Osamu Hamaoka

A semiconductor laser device includes a one-body submount composed of a predetermined material such as SiC or AlN and placed on a mounting surface. A laser diode is placed on a front portion of an upper surface of the submount. A monitoring photodiode composed of crystalline silicon is stacked on a portion of the upper surface of the submount backward from the laser diode.

Semiconductor laser device

There is provided is a semiconductor laser device capable of simplifying fabricating processes with a simple construction and easily mounting two semiconductor laser elements and a monitoring PD on a compact package and a wire bonding method for the semiconductor laser device. There are provided a stem provided with a plurality of lead pins through , a sub-mount that is die-bonded onto the stem and has its surface formed integrally with a monitoring PD and two semiconductor laser elements and that are die-bonded onto the sub-mount and have emission light monitored by the monitoring PD . A first bonding surface i.e. anode electrode of the monitoring PD and a second bonding surface i.e. end surface of a lead pin that is approximately perpendicular to the first bonding surface are wire-bonded to each other.

Semiconductor laser device and wire bonding method capable of easily performing reliable wire bonding

Growing community of inventors

Shiki-gun, Japan

Hideki Ichikawa