Shin-Etsu Handotai Co., Ltd.

Hideki Hariya

Tsuyoshi Nishizawa

Yusho Hoshina

Yoshio Hagiwara

Provided is a method of manufacturing an epitaxial wafer, which includes vapor-phase growing an epitaxial layer on a substrate W placed on a susceptorin a state where an upper surfaceof a lift pininserted in a through-hole H of the susceptorretracts or projects with respect to an upper opening Hof the through-hole H. A level difference D from the upper surfaceof the lift pinto the opening Hof the through-hole H is measured with laser light, and outputs, during epitaxial growth, of heaterslocated above and beneath the susceptorare adjusted on the basis of the measured level difference D. Thus, a method of manufacturing an epitaxial wafer, which facilitates adjustment of the outputs of the heat sources during epitaxial growth, is provided.

Method of manufacturing an epitaxial wafer comprising measuring a level difference between a front surface of a susceptor and an upper surface of a lift pin and adjusting a ratio of the heat source output

Provided is a susceptorfor manufacturing an epitaxial wafer, comprising a mesh-like grooveon a mount face on which a silicon substrate W is to be mounted, wherein a coating H of silicon carbide is formed on the mount face, and the coating has a surface roughness of 1 &#x3bc;m or more in centerline average roughness Ra and a maximum height of a protrusiongenerated in forming the coating H of 5 &#x3bc;m or less. Thus, defects such as warping and slip as well as adhesion of the silicon substrate to the susceptor are prevented.

Susceptor and method for manufacturing silicon epitaxial wafer

A susceptor 1 for a gas phase growth apparatus to which a round depressed pocket 2 with a bottom a side wall is formed for the placing of a semiconductor wafer 3 wherein a protuberance 6 is provided on the circumference of the pocket at and near the position ere said semiconductor wafer touches said side wall 4 of the pocket 2 in such a way that the protuberance 6 covers a part of a chamfered area of said semiconductor wafer 3 without touching it. Thus cracks and breakage due to adhesion between a susceptor and a wafer may be prevented.

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Fukushima, Japan

Hideki Hariya