Kyocera Corporation

Hideki Hakuma

Koichiro Niira

Hirofumi Senta

Hisao Arimune

Kenji Tomita

Kenichi Okada

Hiroki Okui

In a photoelectric conversion device, in a contact between a p-type semiconductorand an electrode, an n-type semiconductorof a conductivity type opposite to that of the p-type semiconductor is provided between the p-type semiconductorand the electrode. The existence of the n-type semiconductorallows a recombination rate of photo-generated carriers excited by incident light to be effectively reduced, and allows a dark current component to be effectively prevented from being produced. Therefore, it is possible to improve photoelectric conversion efficiency as well as to stabilize characteristics. Further, a tunnel junction is realized by increasing the concentration of a doping element in at least one or preferably both of the p-type semiconductorand the n-type semiconductorin a region where they are in contact with each other, thereby keeping ohmic characteristics between the semiconductor and the electrode good.

Multi-junction type solar cell device

To provide an easy-to-manufacture, high-quality photovoltaic conversion device and an optical power generator and also to provide a manufacturing method with high production efficiency. To realize these, a photovoltaic conversion device is manufactured by a manufacturing method of a photovoltaic conversion device comprising steps of:

Photovoltaic conversion device, optical power generator and manufacturing method of photovoltaic conversion device

Solar cell device

A non-Si non-C-based gas is heated by a thermal catalysis body provided in a gas introduction channel, and the heated non-Si non-C-based gas and a material-based gas comprising Si and/or C are separately introduced into a film deposition space through a showerhead having a plurality of gas effusion ports, and in the film deposition space, a plasma space is formed by a nonplanar electrode connected to a radio frequency power supply, thereby forming a film on a substrate. Formation of high-quality Si-based films and C-based films can thus be accomplished at high deposition rate over large area with uniform film thickness and homogeneous quality. Also, highly efficient devices including photoelectric conversion devices represented by solar cells can be manufactured at low-cost by the use of such films.

Method for depositing a film on a substrate using Cat-PACVD

Growing community of inventors

Yokaichi, Japan

Hideki Hakuma