Showa Shell Sekiyu K.k.

Solar Frontier K.k.

Hideki Hakuma

Yoshiaki Tanaka

Hiroki Sugimoto

Katsumi Kushiya

Tetsuya Aramoto

Katsuya Tabuchi

Yoshiyuki Chiba

Takuya Morimoto

Satoru Kuriyagawa

Yasuaki Iwata

Yosuke Fujiwara

Yuri Yamaguchi

A thin-film solar cell comprising a substrate, a first electrode layer arranged upon the substrate, a p-type light absorption layer formed by a group I-III-IVcompound arranged upon the first electrode layer, and an n-type second electrode layer arranged upon the p-type light absorption layer. The p-type light absorption layer includes Cu as a group 1 element and includes Ga and In as group III elements. The ratio of the atomic number between Cu and the group III elements in the entire p-type light absorption layer is lower than 1.0; the ratio of the atomic number between Ga and the group III elements in the surface on the second electrode layer side is no more than 0.13; and the ratio of the atomic number between Cu and the group III elements in the surface on the second electrode layer side is at least 1.0.

Thin-film solar cell and production method for thin-film solar cell

A CIS-based thin film solar cell has a backside electrode layer that is divided by a pattern (P), and a CIS-based light absorption layer, and a transparent conductive film are sequentially formed on a substrate. The backside electrode layer comprises an intermediate layer on the surface that is in contact with the CIS-based light absorption layer, the intermediate layer being composed of a compound of a metal that constitutes the backside electrode layer and a group VI element that constitutes the CIS-based light absorption layer; the intermediate layer comprises a first intermediate layer portion which is formed on the upper surface and a second intermediate layer portion which is formed on the lateral surface that and faces the pattern (P); and the film thickness of the second intermediate layer portion is larger than the film thickness of the first intermediate layer portion.

CIS-based thin film solar cell

Disclosed is a thin-film solar cell which has a high photoelectric conversion efficiency and is provided with a substrate (), a backside surface electrode layer () formed on the substrate (), a p-type light-absorbing layer () formed on the backside surface electrode layer (), and an n-type transparent conductive film () formed on the p-type light-absorbing layer (). Voids () are formed at the interface of the backside surface electrode layer () and the p-type light-absorbing layer ().

Thin film solar cell

This invention aims to provide a laminated structure and an integrated structure of a high production efficiency for a CIS based thin-film solar cell, which can produce a high-resistance buffer layer of the CIS based thin-film solar cell efficiently on a series of production lines and which needs no treatment of wastes or the like, and a manufacturing method for the structures. The CIS based thin-film solar cell includes a back electrode, a p-type CIS based light absorbing layer, a high-resistance buffer layer and an n-type transparent conductive film laminated in this order. The high-resistance buffer layer and the n-type transparent conductive film are formed of thin films of a zinc oxide group. The buffer layer contacts the p-type CIS based light absorbing layer directly, and has a resistivity of 500&#x3a9;&#xb7;cm or higher.

Laminated structure for CIS based solar cell, and integrated structure and manufacturing method for CIS based thin-film solar cell

A treatment object containing any one of Cu/Ga, Cu/In and Cu&#x2014;Ga/In is held in a heated state at a temperature Tfor a time &#x394;tin such a state that a selenium source is introduced, thereby forming a selenide. Thereafter, a sulfur source is introduced to replace the atmosphere in the system with a sulfur atmosphere. In this state, the treatment object is held in a heated state at a temperature Tfor a time &#x394;t. The temperature of the treatment object is then decreased to T, and, at that temperature, the treatment object is held in a heated state for a time &#x394;t.

Process for producing light absorbing layer in CIS based thin-film solar cell

In an integrated structure of a CIS based thin film solar cell obtained by stacking an light absorbing layer, a high-resistance buffer layer, and a window layer in that order, a first buffer layer adjoining the light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), a second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, a third buffer layer is formed to cover the end face exposed by forming an interconnect pattern in the light absorbing layer, the first buffer layer, and the second buffer layer and the top end surface of the second buffer layer, and the third buffer layer is made of a zinc oxide-based thin film.

Integrated structure of CIS based solar cell

A method of production of a CIS-based thin film solar cell comprises the steps of forming an alkali control layer on a high strain point glass substrate, forming a back surface electrode layer on the alkali control layer, forming a CIS-based light absorption layer on the back surface electrode layer, and forming an n-type transparent conductive film on the CIS-based light absorption layer, wherein the alkali control layer is formed to a thickness which allows heat diffusion of the alkali metal which is contained in the high strain point glass substrate to the CIS-based light absorption layer and, furthermore, the CIS-based light absorption layer has an alkali metal added to it from the outside in addition to heat diffusion from the high strain point glass substrate.

Method of production of CIS-based thin film solar cell

In order to manufacture a CIS-based thin film solar cell that can achieve high photoelectric conversion efficiency by adding an alkali element to a light absorbing layer easily and with good controllability, a backside electrode layer () is formed on a substrate (). Then, a p-type CIS-based light absorbing layer () is formed on backside electrode layer (), and then an n-type transparent and electroconductive film () is formed on this p-type CIS-based light absorbing layer (). At this time, the backside electrode layer () is constituted by forming a first electrode layer () using a backside electrode material in which an alkali metal is mixed and, then forming a second electrode layer () using the backside electrode material that does not substantially contain the alkali metal.

Growing community of inventors

Tokyo, Japan

Hideki Hakuma