Nissin Ion Equipment Co., Ltd.

Hideki Fujita

Nariaki Hamamoto

Tetsuya Igo

Sei Umisedo

Suguru Itoi

Kibatsu Shinohara

Takatoshi Yamashita

Shigeki Sakai

Masao Naito

Naoya Takahashi

Yosuke Yoshimura

A plasma source is provided. The plasma source includes a chamber body inside which plasma is generated, a first mirror magnet, a second mirror magnet, and a cusp magnet provided around the chamber body and spaced apart in a axial direction thereof, each comprising permanent magnets radially spaced apart from each other to form spaces between adjacent permanent magnets thereof; and a cooling medium flow passage provided in the spaces that passes a cooling medium for cooling the chamber body.

Plasma source

A plasma source is provided. The plasma source includes a chamber body, a supply passage, a vacuum connector, an antenna, a first insulator, a second insulator, and a conductor. The chamber body has an opening for emitting ions or electrons. The supply passage penetrates through a first peripheral wall of the chamber body. The vacuum connector is provided in a second peripheral wall of the chamber body at a position opposed to the opening. The antenna has a base end connected to the vacuum connector, and extends inside the chamber body toward the opening. The first insulator covers a first region of the antenna at a distal end of the antenna inside the chamber body. The second insulator covers a second region of the antenna at the base end of the antenna inside the chamber body. The conductor covers the second insulator.

An ion beam irradiation apparatus is provided. The apparatus includes an ion source, a mass separator, and an energy filter. The mass separator sorts dopant ions having a specific mass number and valence from an ion beam extracted from the ion source, and outputs the dopant ions. The energy filter is formed to define a beam passing region for allowing the ion beam to pass therethrough, and configured to have a given filter potential in response to application of a voltage thereto to separate passable ions capable of passing through the beam passing region and non-passable ions incapable of passing through the beam passing region, from each other by a difference in ion energy. The given filter potential is set such that the dopant ions are included in the passable ions, and a portion of unwanted ions which cannot be separated from the dopant ions by the mass separator are included in the non-passable ions.

Ion beam irradiation apparatus

The plasma generating apparatus includes: an antenna chamber which is disposed adjacently to a plasma chamber that produces a plasma, and which is exhausted to vacuum; an antenna which is disposed in the antenna chamber, and which radiates a high-frequency wave; a partition plate which is made of an insulator, which separates the plasma chamber from the antenna chamber to block a gas from entering the antenna chamber, and which allows the high-frequency wave radiated from the antenna to pass through the partition plate; and a magnet device which is disposed outside the plasma chamber, and which generates a magnetic field for causing electron cyclotron resonance in the plasma chamber.

Plasma generating apparatus

A plasma generator generates a plasma by ionizing a gas with a high-frequency discharge in a plasma generating chamber so that electrons from the plasma are emitted outside the plasma generator through an electron emitting hole. The plasma generator includes an antenna that is provided in the plasma generating chamber and that emits a high-frequency wave, and an antenna cover that is made of an insulating material and that covers an entire body of the antenna. A plasma electrode having the electron emitting hole is made of a conductive material. A frame cover with a protrusion ensures conductivity by preventing an insulating material from accumulating on a surface of the plasma electrode on a plasma side in sputtering by the plasma.

Plasma generator

An ion implantation apparatus is provided with first and second magnets arranged so as to face each other in a Y direction across a path for a ribbon-shaped ion beam. The first and second magnets cross a traveling direction of the ribbon-shaped ion beam. Each of the first and second magnets has a pair of magnetic poles on an inlet side and on an outlet side of the ion beam. The polarities thereof are opposite between the first magnet and the second magnet.

Ion implantation apparatus

A cathode holder of a tubular shape is inserted into an opening for a cathode of a plasma generating chamber, the cathode holder positioned such that a surface thereof opposes or surrounds a side surface of a cathode. The cathode is held in the cathode holder so that a front surface of the cathode will be positioned on the same plane as, outward from, or inward from the inner wall surface. In the cathode holder is provided a tubular first heat shield surrounding the cathode with a space provided between the first heat shield and the cathode, a surface of the first heat shield positioned to oppose or surround the side surface of the cathode. At a rear end of the cathode is provided a filament. The gap between the cathode holder and the plasma generating chamber is filled with an electrical insulating material.

Ion source

The ion implanter has: an ion source which generates an ion beam; electron beam sources which emit an electron beam to be scanned in the Y direction in the ion source; a power source for the sources; an ion beam monitor which, in the vicinity of an implanting position, measures a Y-direction ion beam current density distribution of the ion beam; and a controlling device. The controlling device has a function of homogenizing the Y-direction ion beam current density distribution measured by the monitor, by, while controlling the power sources on the basis of measurement data of the monitor, increasing a scanning speed of the electron beam in a position corresponding to a monitor point where an ion beam current density measured by the monitor is large; and decreasing the scanning speed of the electron beam in a position corresponding to a monitor point where the measured ion beam current density is small.

Ion implanter

A deflecting electromagnet has first and second magnetic poles that are opposed to each other via an inter-pole space through which an ion beam passes. The deflecting electromagnet further has: a pair of potential adjusting electrodes which are placed to sandwich a path of the ion beam in the same directions as the magnetic poles in the inter-pole space; and a DC potential adjusting power source which applies a positive voltage to the potential adjusting electrodes. The deflecting electromagnet further has a permanent-magnet group for, in the inter-pole space, forming a mirror magnetic field in which intensity is low in the vicinity of the middle in an ion beam passing direction, and intensities in locations which are respectively nearer to an inlet and an outlet are higher than the intensity in the vicinity of the middle.

Deflecting electromagnet and ion beam irradiating apparatus

An ion beam apparatus comprises an ion sourcewhich extracts an ion beama mass separation electromagnetwhich separates an ion beamof desired mass from the ion beamextracted from the ion sourcea scannerwhich scans the injected ion beamwith a given scan center as center within a given scan surface, an electrostatic deflectorwhich deflects the ion beam through 90&#xb0; so that an ion beam of desired energy in said ion beam travels in a direction perpendicular to said scan surface within a circular-arc-shaped deflection zone centered on the scan center, and a scanning mechanismwhich retains a targetand which mechanically, reciprocally moves the targetin a direction in which the target crosses the ion beam passed from the electrostatic deflectorat a given angle.

Ion beam device

A cathode holder of a tubular shape is inserted into an opening for a cathode of a plasma generating chamber with a tip of the cathode holder positioned outward from an inner wall surface of the plasma generating chamber. The cathode is held in the cathode holder so that a front surface of the cathode will be positioned outward from the inner wall surface. In the cathode holder is provided a tubular first heat shield surrounding the cathode with a space provided between the first heat shield and the cathode, the tip of the first heat shield positioned outward from the inner wall surface. At a rear side of the cathode is provided a filament. The gap between the cathode holder and the plasma generating chamber is filled with an electrical insulating material.

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Kyoto, Japan

Hideki Fujita