Fujifilm Corporation

Fuji Photo Film Company, Limited

Hideki Asano

Toshiaki Fukunaga

Takeharu Tani

Mitsugu Wada

An imaging apparatus, including imaging optical system having a lens group and an aperture stop, and a solid-state image sensor which includes a photoelectric conversion layer made of an organic material and a color filter layer with color filters of two or more colors and a separation wall. The photoelectric conversion layer has a thickness of 0.1 82 m to 1 &#x3bc;m, each of the color filters has a refractive index of 1.5 to 1.8, the separation wall has a width of 0.05 &#x3bc;m to 0.2 &#x3bc;m and a refractive index of 1.22 to 1.34, and the lens group and the solid-state image sensor are disposed such that the relationship between a pixel pitch D (&#x3bc;m) of the sensor and a maximum angle &#x3b1; (&#xb0;) of a principal ray incident on the sensor is 45&#x2267;&#x3b1;&#x2267;25.D&#x2212;20 where D&#x2266;2.6 &#x3bc;m.

Imaging apparatus

In a semiconductor light emitting device having a conductive semiconductor substrate on which at least the following layers are stacked in the order listed below: a first clad layer; an active layer which includes at least one highly strained quantum well layer having a compressive strain amount of not less than 1% with respect to the conductive semiconductor substrate; and a second clad layer, a strain buffer layer adjacently formed on the active layer and includes a layer having a compressive strain amount not greater than the strain amount of the active layer is further provided.

Semiconductor light emitting device

A semiconductor light emitting element is equipped with a layered structure including an active layer, and electrode layers at the upper and lower surfaces thereof. At least one of the upper and lower electrode layers is divided into at least two electrodes, which are separated in the wave guiding direction of light. The active layer is structured to have different gain wavelengths along the wave guiding direction, to emit light having different spectra from each region corresponding to each of the at least two electrodes. The spectral distribution of output light is enabled to be varied by individually varying the current injected by each of the at least two divided electrodes.

Semiconductor light emitting element, light source using the semiconductor light emitting element, and optical tomography imaging apparatus

A semiconductor layer contains, as a principal constituent, a Group III-V semiconductor compound, which may be represented by the general formula: AlGaInN, wherein x represents a number satisfying the condition 0&#x2266;x&#x3c;1, y represents a number satisfying the condition 0&#x3c;y&#x3c;1, and z represents a number satisfying the condition 0&#x3c;z&#x3c;1, with the proviso that x+y+z=1. The semiconductor layer is formed with a laser assisted metalorganic vapor phase epitaxy technique. A semiconductor light emitting device comprises the semiconductor layer and may be constituted as a semiconductor laser or a light emitting diode.

Semiconductor layer, process for forming the same, and semiconductor light emitting device

A semiconductor layer contains, as a principal constituent, a Groups III-V semiconductor compound, which may be represented by the general formula: BAlGaN, wherein x represents a number satisfying the condition 0&#x3c;x&#x3c;1, y represents a number satisfying the condition 0&#x2266;y&#x3c;1, and z represents a number satisfying the condition 0&#x3c;z&#x3c;1, with the proviso that x+y+z=1, the semiconductor layer having been formed with a laser assisted metalorganic vapor phase epitaxy technique. A semiconductor light emitting device comprises the semiconductor layer and may be constituted as a semiconductor laser or a light emitting diode.

A photo detecting device comprises a photo-electron generating body, which absorbs light and generates photo-electrons, and a transistor, across which an electric current flows in accordance with a quantity of the photo-electrons having been generated by the photo-electron generating body. An electrical insulator is formed on a surface of the photo-electron generating body. The transistor is provided with a source electrode and a drain electrode, which are formed on the electrical insulator having been formed on the surface of the photo-electron generating body. The source electrode and the drain electrode of the transistor are connected with each other via a channel section containing a nano-tube having electrically conductive or semi-conductive characteristics.

Nano tube photo detecting device

In a semiconductor laser element, a lower cladding layer of AlGaInP of the first conductive type, a lower optical waveguide layer of AlGaInP, a quantum-well active layer of InGaP, an upper optical waveguide layer of AlGaInP, and an upper cladding layer of AlGaInP of the second conductive type are formed in this order on a substrate of GaAs of the first conductive type. The degree of mismatch &#x394;a/a with the substrate and the thickness dw of the quantum-well active layer satisfy the conditions, &#x2212;0.6%&#x2266;&#x394;a/a&#x2266;&#x2212;0.3% and 10 nm&#x2266;dw&#x2266;20 nm. In addition, the resonator length Lc and the reflectances Rf and Rr of the opposite end facets satisfy the conditions, Lc&#x2267;400 &#x3bc;m and Rf&#xd7;Rr&#x2267;0.5.

Semiconductor laser element having tensile-strained quantum-well active layer

In a semiconductor laser element, a lower cladding layer, a lower optical waveguide layer, an InGaAs compressive-strain quantum-well active layer, an upper optical waveguide layer, and an upper cladding layer are formed in this order in a stripe-shaped region on a substrate. A current-blocking layer is formed on both sides of the compressive-strain quantum-well active layer so that the compressive-strain quantum-well active layer is sandwiched between two portions of the current-blocking layer, and trenches extending along the direction of the laser resonator are formed through the current-blocking layer. Instead of providing the trenches, the widths of the layers formed above the substrate are reduced so as to form a ridge structure.

Semiconductor laser element having InGaAs compressive-strained quantum-well active layer

A second-harmonic generation device includes a semiconductor laser element which has a quantum-well active layer, a wavelength control means which controls the wavelength of the light emitted from an end facet of the semiconductor laser element, an optical system which returns to the semiconductor laser element the light the wavelength of which is controlled by the wavelength control means, and a wavelength conversion element which is directly coupled to the other end facet of the semiconductor laser element, and converts the wavelength of the light controlled by the wavelength control means, to a half wavelength. The semiconductor laser element has a resonator length equal to or greater than 900 micrometers and a mirror loss equal to or greater than 16 cm.

Second-harmonic generation device using semiconductor laser element having quantum-well active layer in which resonator length and mirror loss are arranged to increase width of gain peak

In a semiconductor laser device, a current confinement structure is realized by p-type and n-type layers formed above an active layer, where the p-type and n-type layers include a current stopping layer which has an opening for allowing current injection into only a predetermined stripe region of the active layer. In addition, a semiconductor layer is formed above the current confinement structure, and a pair of trenches are formed on both sides of the opening along the predetermined stripe region so as to extend from the semiconductor layer through the current stopping layer to at least the active layer. Further, an insulation film is formed on the semiconductor layer except that an area of the semiconductor layer located right above the predetermined stripe region is not covered by the insulation film, and an electrode is formed on the area of the semiconductor layer.

Semiconductor laser device which includes current confinement structure and trenches formed through current stopping layer down to active layer

A semiconductor laser device is bonded to a heat sink. The semiconductor laser device contains a stripe structure having a width equal to or greater than 10 micrometers, and including a first optical guide layer of a first conductivity type, an active layer, and a second optical guide layer of a second conductivity type. A total thickness of the first and second optical guide layers is equal to or more than 0.5 micrometers. The semiconductor laser device is soldered onto the heat sink at a surface of the semiconductor laser device where the surface located is farther from the active layer than other surfaces of the semiconductor laser device.

Semiconductor laser unit having optical guide layers with increased total thickness and employing junction-up configuration

A semiconductor laser includes a first clad layer having one of p-type conductivity and n-type conductivity, a first optical waveguide layer, a first barrier layer of GaAs,P,, a quantum-well active layer of In,Ga,As,P,, a second barrier layer of GaAs,P,, a second optical waveguide layer and a second clad layer having the of p-type conductivity and n-type conductivity formed in this order on a GaAs substrate. Each of the first and second clad layers is of a composition which matches with the GaAs substrate in lattice. Each of the first and second optical waveguide layers is of a InGaAsP composition which matches with the GaAs substrate in lattice. Each of the first and second barrier layers is 10 to 30 nm in thickness and is of a composition which has tensile strain relative to the GaAs substrate, the product of the tensile strain and the thickness of each of the first and second barrier layers being 5 to 20% nm. The quantum-well active layer is 6 to 10 nm in thickness and is of a composition which has compressive strain of not smaller than 1.0% relative to the GaAs substrate. The sum of the product of the tensile strain and the thickness of the first barrier layer and that of the second barrier layer is larger than the product of the compressive strain and the thickness of the quantum-well active layer.

Semiconductor laser

A semiconductor laser has a first conduction type clad layer, an active layer and a second conduction type clad layer formed on a first conduction type semiconductor substrate in this order. An inverted mesa-shaped ridge is formed on a part of the second conduction type clad layer and a first conduction type current stopping layer is formed on each side of the ridge. Each side of the inverted mesa-shaped ridge is curved into a concave surface in a plane perpendicular to the longitudinal direction of the ridge.

Growing community of inventors

Kanagawa-ken, Japan

Hideki Asano