Shin-Etsu Chemical Co., Ltd.

Hideki Akiba

Toshio Shiobara

Tomoaki Nakamura

Susumu Sekiguchi

Nobuhiro Ichiroku

Masachika Yoshino

Shinsuke Yamaguchi

Yoshihira Hamamoto

Saiko Akahane

The present invention provides a surface-modified glass fiber film having its surface modified by a silicon-containing compound, and a value of a common flexural rigidity of the surface-modified glass fiber film as measured by the method described in JIS R 3420 is in the range of 3 to 100 times as compared to a value of the common flexural rigidity of an unmodified glass fiber film. There can be provided a surface-modified glass fiber film having a high strength, a high heat resistance, a good dimensional stability, a good self-supporting property, a low average linear expansion coefficient, a high storage rigidity at high temperature, and an excellent surface uniformity.

Surface-modified glass fiber film

A base-attached encapsulant for semiconductor encapsulation is used for collectively encapsulating a device-mounted surface of the semiconductor device-mounted substrate having semiconductor devices mounted thereon or a device-formed surface of a semiconductor device-formed wafer having semiconductor devices formed thereon. The base-attached encapsulant has a base and an encapsulating resin layer containing an uncured or semi-cured thermosetting resin component formed onto one of the surfaces of the base, and a linear expansion coefficient &#x3b1;of the semiconductor device to be encapsulated by the base-attached encapsulant, a linear expansion coefficient &#x3b1;of a cured product of the encapsulating resin layer, and a linear expansion coefficient &#x3b1;of the base satisfy both of the following formula (1) and (2);&#x3b1;&#x3c;&#x3b1;&#x3c;&#x3b1;&#x2003;&#x2003;(1)&#x2212;2&#x3c;&#x3b1;+&#x3b1;&#x2212;2&#x3b1;&#x3c;2&#x2003;&#x2003;(2)wherein the unit of the linear expansion coefficient is ppm/K. The base-attached encapsulant for semiconductor encapsulation which suppress package warpage even if a package with a large area is encapsulated.

Base-attached encapsulant for semiconductor encapsulation, semiconductor apparatus

Method for manufacturing semiconductor apparatus using a base-attached encapsulant

The present invention provides an electromagnetic wave shielding support base-attached encapsulant for collectively encapsulating a semiconductor device mounting surface of a substrate having semiconductor devices mounted thereon or a semiconductor device forming surface of a wafer having semiconductor devices formed thereon, the support base-attached encapsulant including a support base having an electromagnetic wave shielding property of 20 dB or more within a range of 100 MHz to 1,000 MHz, and an encapsulant composed of a thermosetting resin layer laminated on the support base. There can be provided a support base-attached encapsulant that can collectively encapsulate a semiconductor device mounting surface of a substrate having the semiconductor devices mounted thereon or a semiconductor device forming surface of a wafer having semiconductor devices formed thereon without occurrence of warping of the substrate or the wafer, peeling of the semiconductor devices from the substrate, and breakage of the wafer even in the case that a large-diameter wafer or a large-area substrate such as inorganic, organic, or metal substrate, especially thin one, is encapsulated, and that has excellent electromagnetic wave shielding property, reliability such as heat resistance and moisture resistance after encapsulating, and extremely high versatility, mass-productivity, workability, and economical efficiency.

Electromagnetic wave shielding support base-attached encapsulant, encapsulated substrate having semicondutor devices mounted thereon, encapsulated wafer having semiconductor devices formed thereon, and semiconductor apparatus

The present invention provides an encapsulant with a base for use in semiconductor encapsulation, for collectively encapsulating a device mounting surface of a substrate on which semiconductor devices are mounted, or a device forming surface of a wafer on which semiconductor devices are formed, the encapsulant comprising the base, an encapsulating resin layer composed of an uncured or semi-cured thermosetting resin formed on one surface of the base, and a surface resin layer formed on the other surface of the base. The encapsulant enables a semiconductor apparatus having a good appearance and laser marking property to be manufactured.

Encapsulant with base for use in semiconductor encapsulation, semiconductor apparatus, and method for manufacturing semiconductor apparatus

A method for producing a semiconductor apparatus with a mold including an upper mold half and a lower mold half, includes: an arranging step of arranging on one of the upper mold half and the lower mold half of the mold a substrate on which a semiconductor device is mounted, the mold being kept at a room temperature or heated to a temperature up to 200&#xb0; C., and arranging on the other of the upper mold half and the lower mold half a substrate on which no semiconductor device is mounted; an integrating step of integrating the substrate on which the semiconductor device is mounted and the substrate on which no semiconductor device is mounted by molding a thermosetting resin with the mold on which the substrates are arranged; and a step of dicing the integrated substrates taken out of the mold to obtain an individualized semiconductor apparatus.

Semiconductor apparatus and method for producing the same

Support base-attached encapsulant for collectively encapsulating a semiconductor device mounting surface of a substrate or semiconductor device forming surface of a wafer, containing a support base having one fibrous film or a plurality of the fibrous films being laminated, the fibrous film subjected to surface treatment with an organosilicon compound, and a resin layer of thermosetting resin formed on one surface of the support base. The support base-attached encapsulant inhibit the substrate or wafer from warping and semiconductor devices from peeling away from the substrate, and collectively encapsulate the semiconductor device mounting surface of the substrate or the semiconductor device forming surface of the wafer even when a large-diameter wafer or large-area substrate is encapsulated. The support base-attached encapsulant has uniformity and homogeneity without opening or tangle of fiber, and is excellent in reliability such as heat resistance, electrical insulation property, moisture resistance, excellent in versatility, economical efficiency, and mass-productivity.

Support base-attached encapsulant, encapsulated substrate having semiconductor devices mounted thereon, encapsulated wafer having semiconductor devices formed thereon, semiconductor apparatus, and method for manufacturing semiconductor apparatus

A fiber-containing resin substrate for collectively encapsulating a semiconductor-device-mounting surface of a substrate on which semiconductor devices are mounted or a semiconductor-device-forming surface of a wafer on which a semiconductor device is formed, including a resin-impregnated fibrous base material which is obtained by impregnating a fibrous base material with a thermosetting resin and semi-curing or curing the thermosetting resin and has a linear expansion coefficient (ppm/&#xb0; C.) in an X-Y direction of less than 3 ppm, and an uncured resin layer formed of an uncured thermosetting resin on one side of the resin-impregnated fibrous base material.

Fiber-containing resin substrate, device-mounting substrate and device-forming wafer, semiconductor apparatus, and method for producing semiconductor apparatus

The invention provides an encapsulant for collectively encapsulating a semiconductor devices mounting surface of a substrate having semiconductor devices mounting thereon or a semiconductor devices forming surface of a wafer having semiconductor devices forming thereon, and the encapsulant comprises a supporting substrate having a difference of a linear expansion coefficient from that of the substrate or the wafer of 5 ppm or less and a thermosetting resin layer being laminated, wherein the thermosetting resin layer has a shape having a height difference to a thickness direction.

Encapsulant, encapsulated substrate having semiconductor devices mounting thereon, encapsulated wafer having semiconductor devices forming thereon, semiconductor apparatus, and method for manufacturing semiconductor apparatus

A method of manufacturing a semiconductor apparatus includes: a charging step of charging the thermosetting resin in excess of an amount necessary for forming the sealing layer to fill the inside of the first cavity with the thermosetting resin and discharging an excess of the thermosetting resin from the first cavity; an integrating step of integrating the substrate on which the semiconductor device is mounted, the substrate on which no semiconductor device is mounted and the sealing layer by molding the thermosetting resin while pressurizing the upper mold and the lower mold; and a dicing step of extracting the integrated substrates from the molding mold and dicing the integrated substrates to obtain an individual semiconductor apparatus.

Method of manufacturing semiconductor apparatus and semiconductor apparatus

Described herein is a sealant laminated composite for collectively sealing a semiconductor device's mounting surface of a substrate on which semiconductor devices are mounted or a semiconductor device's forming surface of a wafer on which semiconductor devices are formed. The composite can include a support wafer and an uncured resin layer constituted of an uncured thermosetting resin formed on one side of the support wafer. In certain aspects, the sealant laminated composite is very versatile, even when a large diameter or thin substrate or wafer is sealed. In certain aspects, this can prevent the substrate or wafer from warping and the semiconductor devices from peeling; can collectively seal a semiconductor device's mounting surface of a substrate on which semiconductor devices are mounted or a semiconductor device's forming surface of a wafer on which semiconductor devices are formed on a wafer level; and can provide a sealant laminated composite that is excellent in the heat resistance and humidity resistance after sealing.

Sealant laminated composite, sealed semiconductor devices mounting substrate, sealed semiconductor devices forming wafer, semiconductor apparatus, and method for manufacturing semiconductor apparatus

A resin solution composition comprising (A) a polyamic acid resin, (B) an alkoxysilyl-containing polyamic acid resin, and (C) an organic solvent cures into a product that has good substrate adhesion and heat resistance and is effective in forming a protective film on a semiconductor device prior to encapsulation with epoxy resin molding material (molding compound) in that it overcomes the chip cracking and thermal deterioration problems of semiconductor packages by thermal stress.

Resin resolution composition, polyimide resin, and semiconductor device

A primer composition comprising an alkoxysilyl-containing polyamide-imide resin, an epoxy resin, a curing promoter, and an organic solvent forms a cured coating having heat resistance and water resistance through brief low-temperature heating and helps bonding of epoxy resin molding compound to semiconductor members.

Primer composition for semiconductor-encapsulating epoxy resin molding compound and semiconductor device

A partial block polyimide-polysiloxane copolymer is provided comprising repeat unit structures having structural formulae (1) and (2) wherein X is an aromatic or aliphatic ring-containing tetravalent organic radical, Yis a diamine residue, Yis a diaminosiloxane residue, Yand Yare contained in the copolymer in amounts of 99-20 mol % and 1-80 mol %, respectively, L and m each are an integer of 2-50. The copolymer has good adhesion to substrates, moisture-proof reliability and a low modulus of elasticity. 

Partial block polyimide-polysiloxane copolymer, making method, and resin composition comprising the copolymer

In a wafer dicing/die bonding sheet comprising a backing member, an adhesive layer, and a protective member, the adhesive layer is made of an adhesive composition comprising a phenolic hydroxyl radical-bearing polyimide resin, an epoxy resin, and an epoxy resin curing agent, the ratio of the total weight of the epoxy resin and the epoxy resin curing agent to the weight of the polyimide resin being from 0.1:1 to 3:1. Due to heat resistance, improved adhesive properties and a low modulus of elasticity, the wafer dicing/die bonding sheet is effective for reducing the warpage of a chip after die bonding.

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Annaka, Japan

Hideki Akiba