2)Denso Corporation

1)Mirise Technologies Corporation

3)Toyota Jidosha Kabushiki Kaisha

Hidekazu Tsuchida

Norihiro Hoshino

Kiyoshi Betsuyaku

Takeshi Okamoto

Isaho Kamata

Akiyoshi Horiai

A silicon carbide ingot having micropipes in a seed crystal closed and being reduced in the gathering of screw dislocations, a method for manufacturing the silicon carbide ingot, and a method for manufacturing a silicon carbide wafer are provided. The silicon carbide ingot includes a seed crystal composed of a silicon carbide single crystal and having micropipes being hollow defects; a buffer layer provided on the seed crystal and composed of silicon carbide; and a bulk crystal growth layer provided on the buffer layer and composed of silicon carbide. The buffer layer and the bulk crystal growth layer have a plurality of screw dislocations continuous with the micropipes closed with the buffer layer, and the plurality of screw dislocations having the micropipe in common in the bulk crystal growth layer are 150 um or more apart from each other.

Silicon carbide ingot including screw dislocations

Growing community of inventors

Tokyo, Japan

Hidekazu Tsuchida