Denso Corporation

Hidekazu Odake

Yukihiko Watanabe

Hajime Tsukahara

Kentarou Okumura

A silicon carbide semiconductor device includes: a silicon carbide semiconductor substrate that has a front surface and a rear surface; and a plurality of ohmic electrodes that are in ohmic contact with a surface of silicon carbide on at least one of the front surface and the rear surface of the silicon carbide semiconductor substrate. The plurality of ohmic electrodes are scattered on the surface of the silicon carbide to provide a concavity and convexity. The concavity and convexity has a height due to the ohmic electrodes less than 1.0 &#x3bc;m.

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Kariya, Japan

Hidekazu Odake