Micron Technology Incorporated

Hidekazu Nobuto

Christopher W Petz

Sanket S Kelkar

Kenichi Kusumoto

Dojun Kim

Kohei Morita

Taizo Yasuda

An apparatus comprising a memory array comprising access lines. Each of the access lines comprises an insulating material adjacent a bottom surface and sidewalls of a base material, a first conductive material adjacent the insulating material, a second conductive material adjacent the first conductive material, and a barrier material between the first conductive material and the second conductive material. The barrier material is configured to suppress migration of reactive species from the second conductive material. Methods of forming the apparatus and electronic systems are also disclosed.

Apparatus including barrier materials within access line structures, and related methods and electronic systems

Microelectronic devices&#x2014;having at least one conductive contact structure adjacent a silicide region&#x2014;are formed using methods that avoid unintentional contact expansion and contact reduction. A first metal nitride liner is formed in a contact opening, and an exposed surface of a polysilicon structure is thereafter treated (e.g., cleaned and dried) in preparation for formation of a silicide region. During the pretreatments (e.g., cleaning and drying), neighboring dielectric material is protected by the presence of the metal nitride liner, inhibiting expansion of the contact opening. After forming the silicide region, a second metal nitride liner is formed on the silicide region before a conductive material is formed to fill the contact opening and form a conductive contact structure (e.g., a memory cell contact structure, a peripheral contact structure).

Microelectronic devices with conductive contacts to silicide regions, and related devices

A method of forming conductive material of a buried transistor gate line includes adhering a precursor comprising tungsten and chlorine to material within a substrate trench. The precursor is reduced with hydrogen to form elemental-form tungsten material over the material within the substrate trench from the precursor.

Growing community of inventors

Hiroshima, Japan

Hidekazu Nobuto