Panasonic Corporation

Skyworks Filter Solutions Japan Co., Ltd.

Skyworks Panasonic Filter Solutions Japan Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Hidekazu Nakanishi

Hiroyuki Nakamura

Tetsuya Tsurunari

Yosuke Hamaoka

Joji Fujiwara

Rei Goto

Yukio Iwasaki

Takashi Inoue

Ryoichi Takayama

Mitsunori Miyanari

Tetsuo Kawasaki

Ryouichi Takayama

Ken Matsunami

Shoji Okamoto

Hiroki Kamiguchi

Tomoya Komatsu

Toru Yamaji

Shun-ichi Seki

Kouji Hasegawa

Kazunori Nishimura

Toru Sakuragawa

Shunichi Seki

Yasuhiko Yokota

Koji Hasegawa

Methods and apparatus for reducing electric loss in an elastic wave element. In one example such a method includes forming an IDT electrode on a piezoelectric body, and forming the connection wiring on the piezoelectric body and electrically connecting the connection wiring to the IDT electrode. Forming the connection wiring includes sequentially forming a lower connection wiring on an upper surface of the piezoelectric body and forming an upper connection wiring over the lower connection wiring. The method further includes forming a reinforcement electrode over the connection wiring that divides the upper connection wiring into first and second upper connection wirings electrically connected to one another by the reinforcement electrode. The reinforcement electrode is formed abutting an upper surface of the lower connection wiring between the first and second upper connection wirings and electrically connected to the lower connection wiring and to the first and second upper connection wirings.

Methods of reducing electric loss in elastic wave elements

An elastic wave device including a substrate, an interdigital transducer (IDT) electrode provided on an upper surface of the substrate, a first wiring electrode provided on the upper surface of the substrate and connected to the IDT electrode, a dielectric film that does not cover a first region of the first wiring electrode but covers a second region of the first wiring electrode above the substrate, the first wiring electrode including a cutout in the second region, and a second wiring electrode that covers an upper surface of the first wiring electrode in the first region and an upper surface of the dielectric film in the second region above the substrate.

Acoustic wave devices having improved connection reliability

A ladder-type surface acoustic wave filter assembly includes a plurality of series resonators formed on a substrate and connected between an input terminal and an output terminal. A first series resonator has a lowest resonance frequency among the plurality of series resonator. A parallel resonator formed on the substrate and connected between the plurality of series resonators and the ground terminal. A dielectric film is coupled to at least one of the plurality of series resonators and has an inverse temperature coefficient of frequency to that of the substrate. A film thickness of the dielectric film in a region where the second series resonator is formed is smaller than a film thickness of the dielectric film in a region where the first series resonator is formed.

Ladder-type surface acoustic wave filter including series and parallel resonators

An elastic wave device includes an interdigital transducer (IDT) electrode in contact with a piezoelectric substrate having a bus bar electrode region including one of a first bus bar electrode and a second bus bar electrode of the IDT electrode, an alternately disposed region where first electrode fingers are alternately disposed with second electrode fingers of the IDT electrode, and an intermediate region including one of the first electrode fingers and the second electrode fingers. A dielectric film is formed in at least part of the intermediate region and in contact with an upper surface of the IDT electrode. The dielectric film includes a medium in which an acoustic velocity of a transverse wave propagating in the dielectric film is lower than an acoustic velocity of a main elastic wave of the alternately disposed region. The dielectric film is not formed in the alternately disposed region.

Elastic wave element with interdigital transducer electrode

In an acoustic wave device, an unnecessary high-order transverse mode wave is suppressed. The acoustic wave device includes a piezoelectric substrate, at least one pair of interdigital transducer (IDT) electrodes formed on the piezoelectric substrate, and a dielectric film which covers at least a part of the piezoelectric substrate and the IDT electrodes. The IDT electrodes each have a plurality of electrode fingers interleaved with each other. An acoustic velocity of an acoustic wave in the area in which the electrode fingers are interleaved with each other is greater than an acoustic velocity of an acoustic wave in an edge area including end portions of the electrode fingers.

Acoustic wave device with suppressed higher order transverse modes

Acoustic wave devices, and antenna duplexers, modules, and communication devices using same

Methods and apparatus for reducing electric loss in an elastic wave element. In one example, the elastic wave element includes a piezoelectric body having a upper surface, an interdigital transducer (IDT) electrode disposed on the piezoelectric body, a connection wiring disposed on the piezoelectric body and electrically connected to the IDT electrode, the connection wiring having a lower connection wiring and an upper connection wiring provided above the lower connection wiring, and a reinforcement electrode provided above the connection wiring, the reinforcement electrode being in contact with and electrically connected to the lower connection wiring.

Elastic wave element with a reinforcement electrode and ladder filter using same

An acoustic wave device includes a piezoelectric substrate made of a lithium niobate material having the Euler angles (&#x3c6;, &#x3b8;, &#x3c8;), an electrode disposed on the piezoelectric substrate for exciting a major acoustic wave of a wavelength &#x3bb;, and a protective layer disposed on the piezoelectric substrate to cover the electrode. The protective layer has a thickness greater than 0.27&#x3bb;. The Euler angles satisfy &#x2212;100&#xb0;&#x2266;&#x3b8;&#x2266;&#x2212;60&#xb0;; 1.193&#x3c6;&#x2212;2&#xb0;&#x2266;&#x3c8;&#x2266;1.193&#x3c6;+2&#xb0;; and either &#x3c8;&#x2266;&#x2212;2&#x3c6;&#x2212;3&#xb0; or &#x2212;2&#x3c6;+3&#xb0;&#x2266;&#x3c8;.

Elastic wave element, and electrical apparatus and duplexer using same

A ladder-type surface acoustic wave filter includes a first series resonator having the lowest resonance frequency among a plurality of series resonators; and a second series resonator having a resonance frequency higher than the first series resonator. The film thickness of a dielectric film in the region where the first series resonator is formed is larger than that of a dielectric film in the region where the second series resonator is formed.

Ladder-type surface acoustic wave filter and duplexer including the same

An acoustic wave element includes a piezoelectric body, an input IDT electrode, an output IDT electrode, a propagation path provided between the input IDT electrode and the output IDT electrode, a first dielectric layer provided on the piezoelectric body so as to cover the input IDT electrode and the output IDT electrode, and a reactive portion provided on the propagation path and configured to react to a substance to be detected or a binding substance configured to bind with the substance to be detected. The main acoustic wave becomes, in the input IDT electrode and the output IDT electrode, a boundary acoustic wave that propagates between the piezoelectric body and the first dielectric layer, and becomes, in the propagation path, a surface acoustic wave that propagates on an upper surface of the propagation path.

Acoustic wave element and acoustic wave element sensor

An elastic wave element includes a piezoelectric substrate, an IDT electrode, and a first dielectric film. The IDT electrode includes a first bus bar electrode, a second bus bar electrode, first electrode fingers, and second electrode fingers. The piezoelectric substrate includes a bus bar electrode region, an alternately disposed region, and an intermediate region. The first dielectric film is formed in at least a part of the intermediate region, and formed of a medium in which acoustic velocity of a transverse wave propagating in the first dielectric film is lower than acoustic velocity of a main elastic wave in the alternately disposed region.

Elastic wave element

In an acoustic wave device, a high-order transverse mode wave which is an unnecessary wave is suppressed. The acoustic wave device includes: a piezoelectric substrate; at least one pair of IDT electrodes formed on the piezoelectric substrate; and a dielectric film which covers at least a part of the piezoelectric substrate and the IDT electrodes, and the IDT electrodes each has a plurality of electrode fingers. The dielectric film covers at least an area in which the electrode fingers are arranged interleaved with each other. An acoustic velocity of an acoustic wave in an intersection area, within the region, which is a portion from ends of the electrode fingers to a predetermined length or more inward from the ends, is greater than an acoustic velocity of an acoustic wave in an edge area including end portions of the electrode fingers.

Acoustic wave device with reduced higher order transverse modes

An acoustic wave resonator includes a piezoelectric body, an IDT electrode for exciting an acoustic wave with wavelength &#x3bb;, and a dielectric thin film provided so as to cover the IDT electrode. The IDT electrode includes a bus bar electrode region, a dummy electrode region, and an IDT cross region in order from outside. The film thickness of the dielectric thin film above at least one of the bus bar electrode region and the dummy electrode region is smaller than that above the IDT cross region by 0.1&#x3bb; to 0.25&#x3bb;. This configuration provides an acoustic wave resonator that reduces transverse-mode spurious emission.

Acoustic wave resonator and duplexer using same

An acoustic wave device includes an interdigital transducer (IDT) electrode and a separate electrode facing the IDT electrode. The IDT electrode includes first and second comb-shaped electrode facing each other. The first comb-shaped electrode includes a first bus bar, first interdigitated electrode fingers, and first dummy electrode fingers. The second comb-shaped electrode includes a second bus bar second interdigitated electrode fingers interdigitated with the first interdigitated electrode fingers, second dummy electrode fingers facing the first interdigitated electrode fingers, weighted parts, and a non-weighted part. The weighted parts have electrodes at spaces between the second interdigitated electrode fingers and the second dummy electrode fingers. In the non-weighted part, there is no electrode at a space out of the spaces which is closest to the separate electrode in the non-interdigitated region. This acoustic wave device prevents short circuits between the IDT electrode and the separate electrode, and provides excellent characteristics of suppressing unwanted waves.

Acoustic wave device and acoustic wave filter

An acoustic wave device includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a dielectric layer provided so as to cover the IDT electrode, and a first stress relaxation layer provided on the dielectric layer. Furthermore, the acoustic wave device includes an extraction electrode connected to the IDT electrode and extracted onto the first stress relaxation layer, and a bump provided on the extraction electrode. An elastic modulus of the first stress relaxation layer is smaller than that of the dielectric layer.

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Osaka, Japan

Hidekazu Nakanishi