National Institute of Advanced Industrial Science and Technology

Hidekazu Nakamae

Takashi Ito

Hidefumi Akiyama

Takahiro Nakamura

Ryunosuke Kuroda

Changsu Kim

A semiconductor laser including: an optical resonator that has a first compound semiconductor layer containing an n-type impurity, a second compound semiconductor layer containing a p-type impurity, and a light-emitting layer provided between the first compound semiconductor layer and the second compound semiconductor layer; and a pulse injection means that injects excitation energy for a sub-nanosecond duration into the optical resonator, wherein the optical resonator has a multi-section structure separated into at least one gain region and at least one absorption region, and the semiconductor laser generates optical pulses having a pulse width shorter than 2.5 times the photon lifetime in the optical resonator.

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Tokyo, Japan

Hidekazu Nakamae