Fujitsu Corporation

Friendtech Laboratory, Ltd.

Hidekazu Miyamoto

Mikio Takagi

Mamoru Maeda

Hajime Kamioka

Yoshimi Shioya

Haruo Shimoda

Noritsugu Yamada

Kojiro Sugane

A thermal reactor for processing semiconductor wafers includes a ring-like reactor body having a cylindrical outer surface and having a central depressed portion to define an inner circular space at the cross section of the reactor body along a longitudinal direction of the reactor body. A wafer holder for mounting the wafers vertically is positioned within the inner circular space and is rotated when a reaction gas is passed from an open bottom end of the reactor body toward a top end of the reactor body. The reaction gas is exhausted through a conduit placed along the outer surface of the reactor body. A plurality of plasma generating electrodes are positioned around the outer surface and within the central depressed portion of the reactor body in order to clean an inner side wall of the reactor body.

Apparatus for manufacturing semiconductor devices

A semiconductor device having a deposited phosphosilicate glass film, containing an insubstantial amount of hydrogen and a low phosphorus concentration, is manufactured at a high mass productivity. This semiconductor device is manufactured by first placing plural substrates for semiconductor devices to be treated in a reaction tube so that the main surfaces of the substrates are substantially vertically aligned with respect to one another and are substantially perpendicularly intersected by the central axis of the reaction tube, the reaction tube being provided with at least two gas feed pipes having plural small openings pierced along the longitudinal direction thereof. Second, a silicon compound gas is introduced through one of the gas feed pipes into the reaction tube and an oxidizing gas is introduced through the other of the gas feed pipes into the reaction tube, while the inside of the reaction tube is maintained a reduced low pressure, whereby phosphosilicate glass films are deposited on the main surfaces of the substrates.

Method for coating a semiconductor device with a phosphosilicate glass

Disclosed is a process for producing a semiconductor device, especially, a high speed silicon gate field effect semiconductor device, by diffusing an impurity substance, such as arsenic or phosphorus, into a polycrystalline silicon layer to be converted into a silicon gate having a high electroconductivity and into portions of a single crystal silicon substrate to be converted into source and drain regions, in a sealed capsule, at an elevated temperature, under a vacuum. During the above-mentioned diffusing operation, the impurity substance can diffuse into the polycrystalline silicon layer at a higher diffusing speed than into the single crystal silicon substrate.

Process for producing a semiconductor device

Growing community of inventors

Sagamihara, Japan

Hidekazu Miyamoto