Japan Display Inc.

Hitachi Displays, Ltd.

Panasonic Liquid Crystal Display Co., Ltd.

Japan Dispaly Inc.

Hidekazu Miyake

Isao Suzumura

Yohei Yamaguchi

Takuo Kaitoh

Arichika Ishida

Hiroto Miyake

Norihiro Uemura

Kazufumi Watabe

Yoshinori Ishii

Takeshi Noda

Toshio Miyazawa

Terunori Saitou

Takeshi Sakai

Eiji Oue

Yoshiharu Owaku

Toshiki Kaneko

Daisuke Sonoda

Toshinari Sasaki

Takahiro Ochiai

Tohru Sasaki

Shinichiro Oka

Masahiro Maki

Hideo Tanabe

Takayuki Nakao

Yasukazu Kimura

Toshihiko Itoga

Jun Fujiyoshi

Takenori Hirota

Takahiro Kamo

Masataka Okamoto

Hidekazu Nitta

Yuichiro Takashina

According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.

Display device

The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor. An oxide filmas an insulating material is formed on the oxide semiconductor. A gate electrodeis formed on the oxide film. A first electrodeis connected to a drain of the first TFT via a first through hole formed in the oxide film. A second electrodeis connected to a source of the first TFT via a second through hole formed in the oxide film

The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor. An oxide filmas an insulating material is formed on the oxide semiconductor. A gate electrodeis formed on the oxide film. A first electrodeis connected to a drain of the first. TFT via a first through hole formed in the oxide film. A second electrodeis connected to a source of the first TFT via a second through hole formed in the oxide film

A display device includes a pixel layer for displaying an image and a circuit layer including a thin film transistor for driving the pixel layer. The thin film transistor includes a semiconductor layer including a channel region and a source region and a drain region sandwiching the channel region, a first gate electrode facing the channel region on a first side which is either above or below the semiconductor layer, a second gate electrode facing at least the channel region and the source region on a second side opposite to the first side, a source electrode connected to the source region, and a drain electrode connected to the drain region. The source electrode penetrates through the semiconductor layer and is connected to the second gate electrode on the second side.

Separation of wirings formed on an organic passivation film is prevented in an organic EL display device or a liquid crystal display device. The organic EL display device includes a TFT formed on a substrate and an organic passivation film formed to cover the TFT. An intermediate film containing SiO or SiN is formed to cover the organic passivation film. An insulation film formed with an organic material is formed on the intermediate film. A reflective electrode is formed on the intermediate film. The reflective electrode is connected to the TFT via a through-hole formed in the organic passivation film and a through-hole formed in the intermediate film.

Manufacturing method for display device

An EL display device includes a TFT substrate on which a scanning line extends in a first direction, a video signal line extends in a second direction, and an EL element having an anode, a luminous layer and a cathode. A protective film covers the scanning line, the video signal line and the EL element. A touch panel detection electrode is disposed above the protective film, and connected to a wiring which is disposed under the protective film via a through hole of the protective film. The touch panel detection electrode has an angle to intersect with the video signal line.

The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor. An oxide filmas an insulating material is formed on the oxide semiconductor. A gate electrodeis formed on the oxide film. A first electrodeis connected to a drain of the first TFT via a first through hole formed in the oxide film. A second electrodeis connected to a source of the first TFT via a second through hole formed in the oxide film

According to one embodiment, a display device includes an insulating substrate, a thin-film transistor including a semiconductor layer formed on a layer above the insulating substrate, a gate electrode which at least partly overlaps the semiconductor layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer, and a light shielding layer formed between the thin-film transistor and the insulating substrate to at least partly overlap the semiconductor layer, the light shielding layer electrically connected to the gate electrode.

The organic EL display device includes a TFT substrate on which a scanning line extends in a first direction, a video signal line extends in a second direction, and a pixel having an anode, an organic EL layer, and a cathode is formed on a region enclosed with the scanning line and the video signal line. A first detection electrode extends in the first direction above the pixel via insulation films. A counter substrate is disposed while covering the first detection electrode via an adhesive. A second detection electrode extends in the second direction at the outer side of the counter substrate.

An organic EL display device has a semiconductor circuit substrate comprising a TFT and an organic passivation layer thereon. An AlO layer is formed over the organic passivation layer, and an electrode layer is formed on the AlO layer. The electrode layer connects with TFT via a through hole formed in the AlO layer and in the organic passivation layer.

Growing community of inventors

Tokyo, Japan

Hidekazu Miyake