Semiconductor Energy Laboratory Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Other

Hidekazu Miyairi

Shunpei Yamazaki

Akihisa Shimomura

Koichiro Tanaka

Kengo Akimoto

Atsuo Isobe

Koji Dairiki

Yasuhiro Jinbo

Kojiro Shiraishi

Takeshi Osada

Chiho Kokubo

Tatsuya Arao

Mai Akiba

Aiko Shiga

Shinya Sasagawa

Hiroshi Shibata

Akiharu Miyanaga

Masahiko Hayakawa

Toshiyuki Isa

Tomoaki Moriwaka

Kiyoshi Kato

Hiromichi Godo

Takafumi Mizoguchi

Yasuo Nakamura

Tamae Takano

Yoshiyuki Kurokawa

Motomu Kurata

Ryu Komatsu

Hideomi Suzawa

Satoshi Kobayashi

Hiroyuki Miyake

Shinji Maekawa

Kenji Kasahara

Daisuke Kawae

Hironobu Shoji

Shuhei Nagatsuka

Setsuo Nakajima

Mitsuhiro Ichijo

Yoshitaka Yamamoto

Katsuaki Tochibayashi

Ryota Hodo

Sachiaki Tezuka

Kosei Nei

Masaki Koyama

Jiro Nishida

Junya Maruyama

Yutaka Shionoiri

Koji Kusunoki

Tetsuhiro Tanaka

Tatsuya Onuki

Takuya Hirohashi

Takeyoshi Watabe

Naoki Makita

Yuji Egi

Naoto Yamade

Teruaki Ochiai

Takuya Matsuo

Fumito Isaka

Tomokazu Yokoi

Yoshinori Ieda

Akihiro Ishizuka

Takahiro Tsuji

Tomohiro Kimura

Yasuyuki Arai

Kei Takahashi

Takayuki Ikeda

Hideaki Kuwabara

Toshinari Sasaki

Daisuke Kubota

Kouhei Toyotaka

Kunihiko Suzuki

Osamu Nakamura

Tetsuji Ishitani

Susumu Kawashima

Takayuki Kato

Yuichi Sato

Kazutaka Kuriki

Takashi Shimazu

Yutaka Okazaki

Kazuya Hanaoka

Satoshi Toriumi

Shigeki Komori

Atsushi Hirose

Yukie Suzuki

Tetsunori Maruyama

Takayuki Inoue

Masao Moriguchi

Erika Takahashi

Shinobu Furukawa

Suguru Hondo

Jun Koyama

Hajime Kimura

Atsushi Umezaki

Ryota Tajima

Yuta Endo

Takashi Hamada

Masami Endo

Ryo Arasawa

Ryo Tokumaru

Sho Kato

The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.

Semiconductor device, manufacturing method thereof, and electronic device

As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.

Semiconductor device and method for manufacturing the same

It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost.

Semiconductor device and manufacturing method thereof

Semiconductor device including transistors and method for manufacturing the same

As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of high manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.

Semiconductor device including flip-flop circuit which includes transistors

To offer a semiconductor device including a thin film transistor having excellent characteristics and high reliability and a method for manufacturing the semiconductor device without variation. The summary is to include an inverted-staggered (bottom-gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used for a semiconductor layer and a buffer layer is provided between the semiconductor layer and source and drain electrode layers. An ohmic contact is formed by intentionally providing a buffer layer containing In, Ga, and Zn and having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrode layers.

The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device

A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

Semiconductor device and semiconductor device production system

Growing community of inventors

Kanagawa, Japan

Hidekazu Miyairi