Sony Corporation

Sony Group Corporation

Oki Electric Industry Co., Ltd.

Hidekazu Kawanishi

Hiroshi Nakajima

Jugo Mitomo

Susumu Sato

Rintaro Koda

Tatsushi Hamaguchi

Masamichi Ito

Yoshiro Takiguchi

Masahiro Murayama

Hiroyuki Miyahara

Kenji Sasaki

Yuichi Hamaguchi

Toshiyuki Obata

Katsunori Yanashima

Takahiro Koyama

Kentaro Hayashi

Kunihiko Tasai

Eiji Nakayama

Hisayoshi Motobayashi

Kei Satou

Hitoshi Domon

Junji Sawahata

Yuuki Isobe

Shoetsu Nagane

A first semiconductor device according to an embodiment of the present disclosure includes: a semiconductor element; a first housing member and a second housing member that house the semiconductor element; a first base layer formed on a bonded surface of the first housing member to the second housing member; a second base layer formed on a bonded surface of the second housing member to the first housing member; a solder bonding section that bonds the first housing member and the second housing member with the first base layer and the second base layer interposed in between; and a solder adsorption layer provided on at least one of the bonded surface of the first housing member or the bonded surface of the second housing member to be apart from the first base layer and the second base layer.

Semiconductor device

There is provided a semiconductor light emitting device that allows the internal resistance to be improved. A semiconductor light emitting device according to an embodiment of the present disclosure includes: a light emitting element; a first housing member and a second housing member at least one of which has a wiring structure; and an electrically conductive bonding section. The first housing member and the second housing member house the light emitting element. The wiring structure electrically couples the light emitting element and an outside. The electrically conductive bonding section bonds the first housing member and the second housing member. The electrically conductive bonding section is electrically coupled to the wiring structure.

Semiconductor light emitting device

A light-emitting device including: a package including a light-emitting element, a reflection member that reflects light outputted from the light-emitting element, and a sealed space that accommodates the light-emitting element and the reflection member; a base plate on which a plurality of the packages is mounted; and lenses opposed to the base plate with the plurality of packages interposed therebetween, the lenses being opposed to the respective packages.

Light-emitting device and projection display apparatus

A light emitting device according to an embodiment of the present disclosure includes: a first layer including AlInGaN (0<x1<1, 0≤x2<1); a second layer that is provided on the first layer and includes AlInGaN (0<y1<1, 0≤y2<1) that is lattice relaxed with respect to the first layer; and a third layer that is provided on the second layer, includes AlInGaN (0<z1<1, 0≤z2<1) that is lattice relaxed with respect to the second layer, and includes an active layer. A lattice constant aGAN of GaN in an in-plane direction, a lattice constant al of the first layer in an in-plane direction, a lattice constant a2 of the second layer in an in-plane direction, and a lattice constant a3 of the third layer in an in-plane direction have a relationship of aGAN<a2<a1, a3.

Light emitting device using a gallium nitride (GaN) based material

To provide a method of manufacturing a light-emitting module capable of accurately arranging a plurality of light-emitting elements at narrow intervals, and a light-emitting module manufactured by the method of manufacturing, and, moreover, a device on which the light-emitting module is mounted. Provided is a method of manufacturing a light-emitting module including: a plurality of light-emitting element arrays each including, in a plane parallel to resonator length of a light-emitting element, a plurality of the light-emitting elements arranged along a width direction perpendicular to a direction of the resonator length; and a substrate on which the plurality of light-emitting element arrays is mounted, the method including arranging the plurality of light-emitting elements on the substrate at predetermined intervals along the width direction in the light-emitting module, by causing side surfaces of the respective light-emitting element arrays adjacent to each other along the width direction to be in contact with each other and mounting the respective light-emitting element arrays on the substrate.

Method of manufacturing light-emitting module, light-emitting module, and device

A method of manufacturing a light emitting element includes, at least: (A) forming a stacked structurewhich includes a GaN-based compound semiconductor and in which a first compound semiconductor layer, an active layer, and a second compound semiconductor layerare stacked, and forming a concave mirror sectionon a first surface side of the first compound semiconductor layer; then (B) forming a photosensitive material layerover the second compound semiconductor layer; and thereafter (C) exposing the photosensitive material layerto light from the concave mirror section side through the stacked structure, to obtain a treatment mask layer including the photosensitive material layer, and then processing the second compound semiconductor layerby use of the treatment mask layer.

Light emitting element and manufacturing method therefor

A light-emitting device according to an embodiment of the present disclosure includes a laminate. The laminate includes an active layer, and a first semiconductor layer and a second semiconductor layer sandwiching the active layer. This light-emitting device further includes a current constriction layer having an opening and a vertical resonator including a first reflecting mirror having a concave-curved shape on the first semiconductor layer side and a second reflecting mirror on the second semiconductor side. The first reflecting mirror and the second reflecting mirror sandwich the laminate and the opening. This light-emitting device further includes an optically transparent substrate between the first reflecting mirror and the laminate. The optically transparent substrate has a first convex portion having a convex-curved shape and one or more second convex portions on a surface on the side opposite to the laminate. The first convex portion is in contact with the first reflecting mirror. The one or more second convex portions are provided around the first convex portion. The one or more second convex portions each have a height greater than or equal to a height of the first convex portion, and an end on the first reflecting mirror side has a convex-curved shape.

Light-emitting device and method of manufacturing light-emitting device

A surface emitting laser includes: a semiconductor layer containing a nitride semiconductor, and including a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked in this order, in which the semiconductor layer includes a light emitting region; and a first light reflecting layer and a second light reflecting layer that are opposed to each other with the semiconductor layer being disposed therebetween. The first semiconductor layer has a high dislocation portion disposed outside the light emitting region. The high dislocation portion has an average dislocation density higher than an average dislocation density of the light emitting region.

Surface emitting laser and method of manufacturing the same

A light-emitting device according to an embodiment of the present disclosure includes a laminate. The laminate includes an active layer, a first semiconductor layer, and a second semiconductor layer. The first semiconductor layer and the second semiconductor layer sandwich the active layer in between. The light-emitting device further includes a current confining layer, a concave-shaped first reflecting mirror provided on side of the first semiconductor layer, and a second reflecting mirror provided on side of the second semiconductor layer. The current confining layer has an opening. The first reflecting mirror and the second reflecting mirror sandwich the laminate and the opening in between. The light-emitting device further includes a first reflecting layer and a phosphor layer. The first reflecting layer is disposed at a position opposed to the first reflecting mirror with a predetermined gap in between. The phosphor layer is disposed between the first reflecting mirror and the first reflecting layer, and performs wavelength conversion on light leaking from the first reflecting mirror.

Light-emitting device and light-emitting apparatus

A semiconductor light emitting device includes a substrate a semiconductor light emitting element that is disposed on the substrate and that emits light along a direction substantially parallel to a main surface of the substrate a wavelength conversion element that is disposed on a light emitting side of the semiconductor light emitting element, that absorbs a portion of the light emitted from the semiconductor light emitting element, and that emits light having a wavelength different from that of the absorbed light; and a holding member that is disposed on the substrate and holds the wavelength conversion element.

A semiconductor light-emitting device according to an embodiment of the present disclosure includes a nitride-based first light-emitting layer. The first light-emitting layer has an InGaN layer (a&#x2265;0), and has a plurality of first island-shaped regions that include InGaN (b&#x3e;a) inside the InGaN layer.

Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device

A laser diode with an improved kink level in the L-I characteristic and capable of obtaining a stable high output in a horizontal transverse mode is provided. The laser diode includes an active layer made of nitride III-V compound semiconductor containing at least gallium (Ga) in 3B-group elements and at least nitrogen (N) in 5B-group elements, an n-type compound semiconductor layer provided on one of faces of the active layer, and a p-type compound semiconductor layer provided on the other face of the active layer. A region closest to the active layer, in the n-type compound semiconductor layer is a high-concentration region whose impurity concentration is higher than that of the other n-type regions.

Laser diode

A laser diode includes an active layer, a strip-shaped ridge provided above the active layer, a pair of resonator end faces sandwiching the active layer and the ridge from an extending direction of the ridge, and an upland section provided being contacted with both side faces of the ridge in at least one of the resonator end faces of the pair of resonator end face and in the vicinity thereof. A thickness from the active layer to a surface of the upland section is larger on the resonator end face side and is smaller on a central side of the ridge, and the thickness is continuously changed from a thick portion on the resonator end face side to a thin portion on the central side of the ridge.

Laser diode and method of manufacturing the same

The present invention is directed to improve reliability by preventing deterioration in the structure of an inner wall of a water channel caused by galvanic corrosion. A heat sink in which a water channel of a cooling fluid is formed by stacking and bonding a plurality of thin plates, in which a surface in the water channel is made of the same metal material except for at least an end of a bonded part of the thin plates.

Growing community of inventors

Tokyo, Japan

Hidekazu Kawanishi