Disco Corporation

Zf Automotive Germany Gmbh

Zf Automotive Japan Co., Ltd.

Hidekazu Iida

Yoshiteru Nishida

Kenta Chito

Hiroyuki Takahashi

Susumu Yokoo

Tomohiro Yamada

Youngsuk Kim

Ryoko Fujiya

Xu Yang

Harish Kumar Reddy Tummala

Ahmad Hafizi

Naoki Ando

A vehicle occupant restraint system comprises a passenger airbag () which includes first and second inflatable chambers (), wherein the second chamber () is provided to cushion the head () of a vehicle occupant () associated with the passenger airbag (). In a state of the passenger airbag () fully filled and arranged in a vehicle, the first chamber () has a higher internal pressure than the second chamber (). In a baffle () of the passenger airbag (), when viewed along a vehicle longitudinal direction (L), the first chamber () has a V shape with two arms () and a tip (), the second chamber () being disposed between the arms () of the V, and the tip () of the V facing downwards with respect to a vehicle vertical direction (H).

Vehicle occupant restraining system comprising a passenger airbag

There is provided a processing method of a wafer having a functional layer on a front surface side. The processing method includes a laser processing step of forming laser processed grooves along streets while removing the functional layer along the streets by executing irradiation with a laser beam and a cut groove forming step of forming cut grooves inside the laser processed grooves along the streets by cutting the wafer by a cutting blade. The processing method also includes a grinding step of causing the cut grooves to be exposed on a back surface side of the wafer and dividing the wafer into plural device chips by grinding the back surface side of the wafer and thinning the wafer and a processing distortion removal step of supplying a gas in a plasma state to the back surface side of the wafer and removing processing distortion.

Processing method of wafer

A method of processing a wafer includes a grinding step of grinding a wafer that has first insulating films covering via electrodes, from a reverse side thereof, an electrode protruding step of protruding the via electrodes covered with the first insulating films from the reverse side by way of etching, a distorted layer forming step of forming a distorted layer on the reverse side of the wafer, an insulating film forming step of forming a second insulating film on the reverse side of the wafer, and an electrode forming step of removing the first insulating films and the second insulating film from the regions where they overlap the via electrodes, and forming reverse-side electrodes connected to the via electrodes.

Method of processing a wafer

An electrostatic chuck is provided and has a holding surface for holding a wafer with a tape attached to one side of the wafer where the tape is in contact with the holding surface. The electrostatic chuck includes a disk-shaped member having a plurality of fine holes communicating with a vacuum source, where the fine holes are exposed to the holding surface. The disk-shaped member also includes a plurality of asperities formed on the holding surface and connected to the fine holes, and an electrode embedded in the disk-shaped member. The vacuum source is operated to produce a vacuum on the holding surface through the fine holes and thereby hold the wafer through the tape on the holding surface under suction, where the asperities formed on the holding surface function as a suction passage communicating with the fine holes.

Electrostatic chuck

A method for processing a wafer in which patterns including a metal layer are formed on streets. The method includes: a step of applying a laser beam along the streets formed with the patterns to form laser processed grooves while removing the patterns; a step of forming cut grooves having a depth in excess of a finished thickness of the wafer, inside the laser processed grooves; a step of grinding the back surface side of the wafer to thin the wafer to the finished thickness and to expose the cut grooves to the back surface of the wafer, thereby dividing the wafer into a plurality of device chips; a step of removing a crushed layer formed on the back surface side of the wafer; and a step of forming a strain layer on the back surface side of the wafer by plasma processing using an inert gas.

Wafer processing method

A method for processing a wafer in which patterns including a metal layer are formed on streets. The method includes: a step of applying a laser beam along the streets formed with the patterns to form laser processed grooves having a depth in excess of a finished thickness of the wafer while removing the patterns; a step of grinding a back surface side of the wafer to thin the wafer to the finished thickness, and to expose the laser processed grooves to the back surface of the wafer, thereby dividing the wafer into a plurality of device chips; a step of removing a crushed layer formed on the back surface side of the wafer; and a step of forming a strain layer on the back surface side of the wafer by plasma processing using an inert gas.

Disclosed herein is a decompression processing apparatus for processing a wafer in a decompressed state including a chamber having a decompressing unit configured to decompress the inside of the chamber, an opening and closing door configured to open and close a carrying-in-and-out opening for carrying the wafer into and out of the chamber, and an inert gas supply source configured to supply an inert gas to the inside of the chamber. The inside of the chamber is maintained in a dry state by continuing to supply the inert gas in a state in which the opening and closing door is opened.

Decompression processing apparatus

Disclosed herein is an etching method for a workpiece. The etching method includes the steps of dissociating an inert gas to form a plasma in an evacuated condition of a chamber to thereby remove moisture present on the workpiece set in the chamber, and next dissociating a fluorine-based stable gas instead of the inert gas to form a plasma in the chamber after removing the moisture to thereby dry-etch the workpiece.

Growing community of inventors

Tokyo, Japan

Hidekazu Iida