Kabushiki Kaisha Toshiba

Kioxia Corporation

Tokyo Electron Limited

Toshiba Memory Corporation

Rion Company Ltd.

National Institute of Advanced Industrial Science and Technology

Hidekazu Hayashi

Hiroshi Tomita

Hisashi Okuchi

Yohei Sato

Takayuki Toshima

Takehiko Orii

Hiroki Ohno

Kazuyuki Mitsuoka

Gen You

Mitsuaki Iwashita

Linan Ji

Yukiko Kitajima

Mie Matsuo

Kaoru Kondo

Takuya Tabuchi

Kei Watanabe

Eishi Shiobara

Tetsuya Kurosawa

Shinya Takyu

Tatsuhiko Koide

Shinya Okuda

Haruhisa Kato

Junya Sagara

Yusuke Matsuura

Ayako Nakamura

Kazuna Bando

Sota Kondo

Norihiro Togasaki

Takuro Okubo

In one embodiment, a method of manufacturing a semiconductor device includes forming a first semiconductor layer including impurity atoms with a first density, on a first substrate, forming a second semiconductor layer including impurity atoms with a second density higher than the first density, on the first semiconductor layer, and forming a porous layer resulting from porosification of at least a portion of the second semiconductor layer. The method further includes forming a first film including a device, on the porous layer, providing a second substrate provided with a second film including a device, and bonding the first and second substrates to sandwich the first and second films. The method further includes separating the first and second substrates from each other such that a first portion of the porous layer remains on the first substrate and a second portion of the porous layer remains on the second substrate.

Semiconductor device, method of manufacturing semiconductor device, and method of recycling substrate

For an easy calibration using calibration particles, provided is a measuring device to capture images of target objects. An image analyzer acquires multiple images obtained at a predetermined time interval, (a) specifies the mean-square displacement of a bright point of a calibration particle based on the displacement of the bright point of the calibration particle in the multiple images in a calibration mode, and (b) specifies the mean-square displacement of a bright point of the target particle based on the displacement of the bright point of the target particle in the multiple images in a measurement mode. A particle size analyzer (c) derives the particle size of the target particle from the mean-square displacement of the bright point of the target particle based on the mean-square displacement of the bright point of the calibration particle and the particle size of the calibration particle in an analysis mode.

Particle measuring device, calibration method, and measuring device

A manufacturing method of a semiconductor device according to an embodiment comprises, bonding a first semiconductor substrate and a second semiconductor substrate to form a stack, filling a first fill material having a first viscosity in a gap located between an outer peripheral portion of the first semiconductor substrate and an outer peripheral portion of the second semiconductor substrate, filling a second fill material having a second viscosity higher than the first viscosity in the gap so as to be adjacent to the first fill material after filling the first fill material in the gap and thinning the second semiconductor.

Semiconductor memory device and method for driving the same

A semiconductor manufacturing apparatus includes a mounting unit arranged to mount an annular member, having an annular shape, to a work substrate including a first substrate and a second substrate bonded to each other so that the annular member surrounds the first substrate. The apparatus further includes a holding unit arranged to hold the work substrate having the annular member mounted thereto. The apparatus further includes a first fluid supply unit arranged to supply a first fluid to the second substrate of the work substrate held by the holding unit.

Semiconductor manufacturing apparatus and method for manufacturing semiconductor device

According to one embodiment, a particle measuring method is disclosed. The method includes irradiating a detection liquid with light. The detection liquid contains methyl salicylate. The method further includes converting scattered light from the detection liquid into an electric signal by using photoelectric conversion after irradiating the detection liquid with the light. The method further includes performing a particle measurement on the detection liquid by using the electric signal.

Particle measuring method and detection liquid

A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.

Substrate processing method, substrate processing apparatus, and storage medium

A substrate processing method and apparatus for preventing evaporation of an anti-drying fluorine-containing organic solvent from a substrate during transportation of the substrate into a processing container and can prevent decomposition of a fluorine-containing organic solvent in the processing container. A substrate, the surface of which is covered with a first fluorine-containing organic solvent, is carried into a processing container. The first fluorine-containing organic solvent is removed from the substrate surface by forming a high-pressure fluid atmosphere of a mixture of the first fluorine-containing organic solvent and a second fluorine-containing organic solvent, having a lower boiling point than the first fluorine-containing organic solvent, in the processing container e.g. by supplying a high-pressure fluid of the second fluorine-containing organic solvent into the processing container. Thereafter, a fluid in the state of a high-pressure fluid or a gas is discharged from the processing container to obtain the substrate in the dried state.

Substrate processing method and storage medium

A semiconductor manufacturing method in accordance with an embodiment includes feeding a first gas, which contains a component of a first film, to a reaction chamber, and forming a first film over a semiconductor substrate, which is accommodated in the reaction chamber, through plasma CVD. The semiconductor manufacturing method includes feeding a second gas to the reaction chamber after forming the first film, allowing the first gas in the reaction chamber to react on the second gas, and forming a second film, which has a composition different from that of the first film, over the surface of the first film. The semiconductor manufacturing method includes selectively removing the second film.

Semiconductor manufacturing method

A supercritical drying method for a semiconductor substrate is disclosed. The method may include introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method may also include performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

Supercritical drying method for semiconductor substrate and supercritical drying apparatus

According to one embodiment, a supercritical drying method for a semiconductor substrate comprises introducing a semiconductor substrate, a surface of the semiconductor substrate being wet with a water-soluble organic solvent, to the inside of a chamber, hermetically sealing the chamber and increasing a temperature inside the chamber to not lower than a critical temperature of the water-soluble organic solvent, thereby bringing the water-soluble organic solvent into a supercritical state, decreasing a pressure inside the chamber and changing the water-soluble organic solvent in the supercritical state to a gas, thereby discharging the water-soluble organic solvent from the chamber, starting a supply of an inert gas into the chamber as the pressure inside the chamber decreases to atmospheric pressure, and cooling the semiconductor substrate in a state where the inert gas exists inside the chamber.

Supercritical drying method for semiconductor substrate

According to one embodiment, a supercritical drying method for a semiconductor substrate includes introducing a semiconductor substrate formed with a metal film into a chamber, the surface of the substrate being wet with alcohol, supplying a supercritical fluid of carbon dioxide into the chamber, setting a temperature inside the chamber to a predetermined temperature, to replace the alcohol on the semiconductor substrate with the supercritical fluid, and discharging the supercritical fluid and the alcohol from the chamber while keeping the temperature inside the chamber at the predetermined temperature, to lower a pressure inside the chamber. The predetermined temperature is not lower than 75&#xb0; C. but lower than a critical temperature of the alcohol.

According to one embodiment, provided is a method for cleaning an imprinting mask including a template having an uneven pattern, a base layer disposed on the template, and a sacrificial film disposed on the base layer. In the method for cleaning the imprinting mask, the sacrificial film is removed, and a contaminant adhered on the sacrificial film is removed from the template pattern.

Method for cleaning imprinting mask

According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

Growing community of inventors

Yokohama, Japan

Hidekazu Hayashi