Sony Corporation

Hidekazu Aoyagi

Takahiko Kawasaki

Katsutoshi Itou

Michinori Shiomi

Makoto Nakashima

Takahiro Arakida

Hironobu Narui

Takahiro Koyama

Mikihiro Yokozeki

A light emitting diode including: a columnar laminated structurein which a first compound semiconductor layer, a light emitting layer, and a first portionA of a second compound semiconductor layer are laminated; a first electrodeelectrically connected to the first compound semiconductor layer; and a second electrode. A second portionB of the second compound semiconductor layer is formed on the first portionA of the second compound semiconductor layer, apart from an edge portionof the first portionA of the second compound semiconductor layer, the second electrodeis formed at least on a top surface of the second portionB of the second compound semiconductor layer, and light is outputted at least from the top surfaceand a side surfaceof the second portionB of the second compound semiconductor layer.

Light emitting diode

A light emitting element includes: a laminated body including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer in this order, the second conductive semiconductor layer having a light extraction surface; and a recombination suppression structure provided in vicinity of an end surface of the active layer, the recombination suppression structure having a bandgap larger than a bandgap of the active layer.

Light emitting element, method of manufacturing the same, and light emitting device

A light emitting device includes: a laminated body including a first-conductivity type semiconductor layer, a light emitting layer, and a second-conductivity type semiconductor layer in this order; a contact layer provided in contact with the second-conductivity type semiconductor layer at least at a peripheral edge of the second-conductivity type semiconductor layer; a first electrode electrically connected to the first-conductivity type semiconductor layer; a second electrode provided nearer to the first-conductivity type semiconductor layer than the second-conductivity type semiconductor layer; and a conductor electrically connecting the second electrode and the contact layer to each other.

Light emitting device and method of manufacturing the same, and light emitting unit

Disclosed herein is a light-emitting element including: a first conductivity type semiconductor layer; a light-emitting functional layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the light-emitting functional layer; a first conductivity type electrode which has continuity with the exposed portion of the first conductivity type semiconductor layer; a second conductivity type electrode which has continuity with the second conductivity type semiconductor layer; an insulating layer which lies between the light-emitting functional layer, second conductivity type semiconductor layer and second conductivity type electrode on one part and the first conductivity type electrode on the other part; and an annex insulating layer annexed to the insulating layer to form a virtual diode having rectifying action in the opposite direction to that of a diode made up of the second conductivity type semiconductor layer, light-emitting functional layer and first conductivity type semiconductor layer.

Growing community of inventors

Miyagi, Japan

Hidekazu Aoyagi