Tokyo Ohka Kogyo Co., Ltd.

Hidekatsu Kohara

Toshimasa Nakayama

Kousuke Doi

Nobuo Tokutake

Satoshi Niikura

Hatsuyuki Tanaka

Ken Miyagi

Atsushi Sawano

Shingo Asaumi

Taku Nakao

Takako Suzuki

Masanori Miyabe

Kouichi Takahashi

Hiroshi Hosoda

Yoshiyuki Sato

Miki Kobayashi

Hayato Ohno

Hisashi Nakane

Masaki Kurihara

Akira Yokota

Tetsuya Kato

Remi Numata

Atsuko Hirata

Yoshiaki Arai

Tsuyoshi Nakamura

Satoshi Shimatani

Hiroyuki Yamazaki

Shinichi Hidesaka

Shinichi Kono

Masato Saito

Taeko Ikegawa

Ryuusaku Takahashi

Sachiko Tamura

Kazuyuki Nitta

Taku Hirayama

Jun Koshiyama

Mitsuo Hagihara

Daisuke Hayashi

Yasuo Masuda

Hisanobu Harada

Yasuhide Ohuchi

Tatsuya Hashiguchi

Tetsuya Nakajima

Kazuhiko Nakayama

Yoshiyuki Satoh

Koichi Takahashi

Naoki Aoyanagi

Yoshito Ando

Junichi Mizuta

Hatsuyuki Tanka

A phenol novolak resin has a peak intensity ratio of ortho-ortho bond (o-o)/ortho-para bond (o-p)/para-para bond (p-p) in a resin structure not substantially varying in each molecular weight fraction and has a weight average molecular weight (Mw) of 3000 to 20000 in terms of polystyrene, which peak intensity ratio is detected byC-NMR analysis. The phenol novolak resin can form both dense pattern and isolation pattern with good shapes in the formation of a fine resist pattern of not more than 0.35 &#x3bc;m and has satisfactory sensitivity, definition, and focal depth range properties, and has a resin composition being uniform in each molecular weight fraction. A process for producing the phenol novolak resin, and a positive photoresist composition using the resin are also provided.

Phenol novolak resin, production process thereof, and positive photoresist composition using the same

A novel copolymer includes a repeating unit (B) derived from an unsaturated carboxylic anhydride, a repeating unit (C) represented by Formula (II), and a repeating unit (D) represented by Formula (III).

Copolymer, photoresist composition, and process for forming resist pattern with high aspect ratio

The present invention provides a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, and the ingredient (B) is a quinonediazide ester of, for example, 2,6-bis&lsqb;4-hydroxy-3-(2-hydroxy-3,5-dimethylbenzyl)-2,5-dimethylbenzyl&rsqb;-4-methylphenol, where the average degree of esterification of 20% to 80%.

Positive photoresist composition and process for synthesizing polyphenol compound

A positive photoresist composition includes (A) an alkali-soluble resin, (B) a photosensitizer including, for example, a quinonediazide ester of bis&lsqb;2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl&rsqb;methane, and (C) a compound having a gram absorption coefficient of 5 to 60 with respect to light with a wavelength of 365 nm.

Positive photoresist composition, substrate with a photosensitive film and process for imaging a resist pattern

A novel copolymer includes a repeating unit (A) represented by, for example, Formula (I) below, and a repeating unit (B) derived from an unsaturated carboxylic anhydride. The novel copolymer is suitable for the preparation of a photoresist composition that has satisfactory transparency, high sensitivity and definition and exhibits satisfactory DOF properties in the field of photolithography using a deep UV light source. By the use of the photoresist composition, a process forms a resist pattern with a high aspect ratio.

Positive photoresist composition and process and synthesizing polyphenol compound

A positive photoresist composition includes (A) an alkali-soluble resin, in which part of phenolic hydroxyl groups is protected by an acid-decomposable group; (B) a quinonediazide ester; and (C) a compound which generates an acid upon irradiation of light with a wavelength of 365 nm. This positive photoresist composition can form a fine pattern of about 0.35 &mgr;m in the photolithographic process using i-ray (365 nm), is excellent in focal depth range properties in such an ultrafine region, and has a high sensitivity.

Positive photoresist composition comprising a phenolic compound having both an acid-decomposable group and a naphthoquinonediazide sulfonyl group

A novolak resin precursor is composed of bonded phenolic moieties, one of the hydrogen atoms in the o- or p-positions relative to the hydroxy group of each phenolic moiety is substituted with an alkyl or alkenyl group having 1 to 3 carbon atoms, and the other two hydrogen atoms are bonded through methylene bonds. The content of ortho-ortho bonding is 30 to 70% relative to the number of total methylene bonds and the weight average molecular weight of the precursor is 300 to 10,000. A novolak resin is obtained from this precursor, and a positive photoresist composition comprises this novolak resin. The invention provides a positive photoresist composition that comprises less binuclear compounds, suppresses scum formation, is excellent in terms of definition and coating performance and provides a resist pattern having satisfactory heat resistance.

Novolak resin precursor, novolak resin and positive photoresist composition containing the novolak resin

A positive photoresist composition includes (A) an alkali-soluble resin, (B) a quinonediazide ester of, e.g., bis&lsqb; -dimethyl- -( -hydroxy- -methylbenzyl)- -hydroxyphenyl&rsqb;methane and/or -bis&lsqb; -hydroxy- -( -hydroxybenzyl)- -methylbenzyl&rsqb;- -cyclohexylphenol, and (C) -bis(diethylamino)benzophenone. The composition exhibits high sensitivity and definition and improved focal depth range properties and underexposure margin.

Positive photoresist composition and process for forming resist pattern

Disclosed are a positive photoresist composition including (A) an alkali-soluble resin, (B) a photosensitizer containing a quinonediazide ester of, e.g., bis&lsqb;2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl&rsqb;methane and (C) e.g., 2,6-bis(2,5-dimethyl-4-hydroxybenzyl)-4-methylphenol; and a process including the steps of coating the composition onto a 8 to 12-inch substrate, drying, exposing and developing the same. The composition which can form a pattern having a good shape whose dimensional changes are minimized in a wide range over surface of the substrate, particularly in processes using a large-diameter substrate, and the process for forming a resist pattern using the composition are provided.

Positive photoresist composition and process for forming resist pattern using same

A positive photoresist composition includes (A) an alkali-soluble resin, and (B) a photosensitizer including an ester of a 1,2-naphthoquinonediazidesulfonyl compound with a compound of the following formula (I). This positive photoresist composition has satisfactory sensitivity, definition, and depth of focus properties, can form both dense patterns and isolation patterns with good shapes in the formation of mixed resist patterns, and can minimize inverted taper shape formation of isolation resist patterns induced by shifts of focal depth to the minus side.

Positive photoresist composition

In a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, Ingredient (B) contains (B-1) a quinonediazide ester of, e.g., bis&lsqb;2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl&rsqb;methane or 2,4-bis&lsqb;4-hydroxy-3-(4-hydroxybenzyl)-5-methylbenzyl&rsqb;-6-cyclohexylphenol, and (B-2) a quinonediazide ester of, e.g., methyl gallate or 2,2-bis(2,3,4-trihydroxyphenyl)propane. The composition exhibits high sensitivity and definition, and improved focal depth range properties and underexposure margin.

A positive photoresist composition for forming a contact hole which comprises (A) an alkali-soluble resin; (B) a naphthoquinonediazide group-containing compound; and (C) a solvent, wherein the ingredient (B) comprises: at least one naphthoquinonediazidesulfonic ester of a polyphenol compound, where said polyphenol compound is composed of from 4 to 6 benzene rings each bonding via a methylene chain, each of the methylene chains is in a meta position to other methylene chains, and each of the benzene rings has a hydroxyl group is provided. According to tie present invention, a positive photoresist composition and a process for forming a contact hole can be provided each of which gives a contact hole pattern image in exact accordance with a mask pattern without dimple formation, in the contact hole forming technologies using the phaseshift method.

Positive photoresist composition and process for forming contact hole

A novolak resin precursor is composed of bonded phenolic moieties, one of the hydrogen atoms in the o- or p-positions relative to the hydroxy group of each phenolic moiety is substituted with an alkyl or alkenyl group having 1 to 3 carbon atoms, and the other two hydrogen atoms are bonded through methylene bonds. The content of ortho&mdash;ortho bonding is 30 to 70% relative to the number of total methylene bonds and the weight average molecular weight of the precursor is 300 to 10,000. A novolak resin is obtained from this precursor, and a positive photoresist composition comprises this novolak resin. The invention provides a positive photoresist composition that comprises less binuclear compounds, suppresses scum formation, is excellent in terms of definition and coating performance and provides a resist pattern having satisfactory heat resistance.

A positive photoresist composition for forming a contact hole which comprises (A) an alkali-soluble resin; (B) a naphthoquinonediazide group-containing compound; and (C) a solvent, wherein the ingredient (B) comprises: at least one naphthoquinonediazidesulfonic ester of a polyphenol compound, where said polyphenol compound is composed of from 4 to 6 benzene rings each bonding via a methylene chain, each of the methylene chains is in a meta position to other methylene chains, and each of the benzene rings has a hydroxyl group is provided. According to the present invention, a positive photoresist composition and a process for forming a contact hole can be provided each of which gives a contact hole pattern image in exact accordance with a mask pattern without dimple formation, in the contact hole forming technologies using the phaseshift method.

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Kanagawa, Japan

Hidekatsu Kohara