Sandisk Technologies Inc.

Semiconductor Components Industries, LLC

Hidehito Koseki

Noritaka Fukuo

Yuji Takahashi

Takuya Futase

Tomoyasu Kakegawa

Hokuto Kodate

Eiichi Fujikura

Keita Kumamoto

Hidetoshi Nakamoto

Shunsuke Akimoto

Kazumasa Takenaka

Akinori Yutani

Kengo Miura

Masaomi Koizumi

A semiconductor structure includes a field effect transistor located on a semiconductor substrate, a silicon oxide liner contacting at least a portion of the semiconductor substrate, a silicon nitride liner contacting a top surface and a sidewall of the silicon oxide liner and contacting a top surface of the semiconductor substrate in a seal region, a silicon nitride diffusion barrier layer including a planar bottom surface that contacts top surfaces of vertically extending portions of the silicon nitride liner, and a silicon oxide material portion overlying the silicon nitride diffusion barrier layer. A combination of the silicon nitride liner and the silicon nitride diffusion barrier layer constitutes a hydrogen diffusion barrier structure that continuously extends from the seal region and over the field effect transistor.

Hydrogen diffusion barrier structures for CMOS devices and method of making the same

An initial etch forms a trench over first contact areas of a plurality of NAND strings, the initial etch also forming individual openings over second contact areas of the plurality of NAND strings. Material is added in the trench to reduce an area of exposed bottom surface of the trench while maintaining the individual openings without substantial reduction of bottom surface area. Subsequent further etching extends the trench and the plurality of individual openings.

Source line formation and structure

In one embodiment, a common drain semiconductor device includes a substrate, having two transistors integrated therein. The substrate also includes a plurality of active regions on a major surface of the substrate. The active regions of each transistor may be interleaved.

Common drain semiconductor device structure and method

Growing community of inventors

Yokkaichi, Japan

Hidehito Koseki