Semiconductor Energy Laboratory Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Other

Ricoh Company, Ltd.

Sharp Kabushiki Kaisha, Co., Ltd.

Hidehito Kitakado

Shunpei Yamazaki

Jun Koyama

Satoshi Murakami

Yukio Tanaka

Hideto Ohnuma

Kenji Kasahara

Ritsuko Kawasaki

Takuya Matsuo

Taketomi Asami

Yukio Yamauchi

Masaya Kadono

Takeshi Fukunaga

Takeshi Noda

Yasuyuki Arai

Masahiko Hayakawa

Tatsuya Arao

Takayuki Ikeda

Hiroyuki Ogawa

Yu Yamazaki

Hiroshi Shibata

Sumio Katoh

Masayuki Sakakura

Mitsuaki Osame

Etsuko Fujimoto

Saishi Fujikawa

Kazuhide Tomiyasu

Kazuatsu Ito

Masataka Itoh

Yasuhiro Mitani

Etsuko Asano

Takashi Yokoshima

Masanori Kyoho

Hideto Ohnumo

Seiji Kaneko

Tadayoshi Miyamoto

Masaaki Yoshida

Daisuke Kosaka

Tokuaki Kuniyoshi

Shoji Matsumoto

Kenji Fujita

This invention provides a semiconductor device having high operation performance and high reliability. An LDD regionoverlapping with a gate wiring is arranged in an n-channel TFTforming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regionsandnot overlapping with a gate wiring are arranged in an n-channel TFTforming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD regionthan in the LDD regionsand

Semiconductor device and fabrication method thereof

A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.

Semiconductor device and a method of manufacturing the same

A semiconductor device () includes an oxide semiconductor layer () and a conductor layer () supported on a substrate (). The oxide semiconductor layer () contains a first metallic element. The conductor layer () has a multilayer structure including a first metal oxide layer (m) containing the first metallic element, a second metal oxide layer (m) on the first metal oxide layer, the second metal oxide layer (m) containing an oxide of a second metallic element, and a metal layer (M) on the second metal oxide layer, the metal layer (M) containing the second metallic element. The first metal oxide layer (m) and the oxide semiconductor layer () are made of the same oxide film. When viewed from the normal direction of the substrate, the first metal oxide layer (m) and the oxide semiconductor layer () do not overlap.

Semiconductor device and method for manufacturing same

Semiconductor device including light-emitting element

A semiconductor device (A) has an oxide semiconductor layer (). The oxide semiconductor layer () has a channel region (), and a source region () and drain region () positioned on respective sides of the channel region (). The source region () has a low-resistance source region () that has a lower resistance than the channel region (), and the drain region () has a low-resistance drain region () that has a lower resistance than the channel region (). The carrier concentrations of the low-resistance source region () and the low-resistance drain region () become progressively lower from a connecting portion between a source electrode () and the low-resistance source region () and a connecting portion between a drain electrode () and the low-resistance drain region () towards the channel region ().

In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.

Semiconductor device comprising a second organic film over a third insulating film wherein the second organic film overlaps with a channel formation region and a second conductive film

The invention provides a thin film transistor that can reduce an off-current flowing in end-parts in a channel width direction of a channel layer and a manufacturing method therefor.

Thin film transistor and display device

The present invention includes at least a step forming a source electrode () and a drain electrode (), each of which is a multilayer film of a first conductive film (), () made of titanium or molybdenum, a second conductive film (), () made of copper, and a third conductive film (), () made of titanium oxide, a step of forming passivation film (), which is an inorganic insulating film, on an oxide semiconductor layer (), the source electrode () and drain electrode (), and an annealing step of annealing the oxide semiconductor layer ().

Method of manufacturing thin film transistor substrate and thin film transistor substrate manufactured by the method

The invention provides a thin film transistor having current driving force that can be substantially improved. By heat treatment, the IGZO layer () from which oxygen is taken away by the titanium electrodes () becomes the low resistance regions (), and the IGZO layer () from which oxygen is not taken away remains as the high resistance region (). In this state, when the gate voltage is applied to the gate electrode (), electrons in the low resistance regions () near the boundaries with the high resistance region () move respectively to the titanium electrode () sides. As a result, the length of the low resistance regions () becomes short, and oppositely, the length of the high resistance region () becomes longer by the size of the shortened low resistance regions. However, the electrical channel length (Le) becomes shorter than the source/drain interval space (Lch) as the limit resolution of the exposure device, and the current driving force becomes large.

A switching circuit (semiconductor device) () includes two switching units (SWand SW), which are connected in series to each other, and two capacitances (CSand CS), where one electrode of one of the capacitances is connected to the connecting section of the switching units (SWand SW) and one electrode of the other capacitance is connected to one end of the switching units (SWand SW). To the other electrodes of the capacitances (CSand CS), signals having a constant voltage or signals having a same phase are supplied. A bottom gate electrode (light-shielding film) () is formed for the switching unit (SW).

Semiconductor device, active matrix substrate, and display device

Semiconductor device comprising a spacer wherein the spacer has an opening through which a pixel electrode is connected to a first transistor

Growing community of inventors

Hyogo, Japan

Hidehito Kitakado