Sharp Kabushiki Kaisha Corporation

Hidehisa Tateoka

Kenichi Tanaka

Shigeo Onishi

Yoshimitsu Yamauchi

Keizo Sakiyama

Shigeo Ohnishi

Makoto Tanigawa

Masato Kawai

A process for producing a semiconductor device including the steps of:

Process for producing semiconductor devices

A method for manufacturing a semiconductor device comprising:

Method of forming an element isolating portion in a semiconductor device

A method of manufacturing a semiconductor device includes the steps of (a) depositing a first insulating film by an isotropic deposition method over the entire surface of a semiconductor substrate which is provided with a narrow trench having an opening width in submicrons and a broad trench having an opening width larger than 1 .mu.m so that the narrow and broad trenches are substantially filled with the first insulating film; (b) removing the first insulating film by an isotropic dry etching method; (c) depositing a second insulating film over the entire surface of the semiconductor substrate by an isotropic deposition method so that the narrow and broad trenches are substantially filled with the second insulating film; (d) forming a first resist layer on the broad trench filled with the second insulating film; (e) forming a second resist layer over the entire surface of the second insulating film and the first resist layer thereon; and (f) removing the first and second resist layers and the second insulating film by an anisotropic dry etching method until the surface of the semiconductor substrate is flattened.

Method of manufacturing a semiconductor device by filling and

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Tenri, Japan

Hidehisa Tateoka